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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN030-150P,127

Name: PSMN030-150P,127
Brand: Nexperia USA Inc.
SKU: PSMN030-150P,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN030-150P,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN030-150P,127.pdf

Description:: MOSFET N-CH 150V 55.5A TO220AB

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Product details

Overview

PSMN030-150P,127 from Nexperia is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, designed for high-efficiency power switching in DC-DC converters and switched-mode power supplies. It delivers 150 V drain-source voltage rating, 55.5 A continuous drain current at T_mb = 25 °C, and 24 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C.

For engineers reviewing the PSMN030-150P,127 datasheet, PSMN030-150P,127 pinout, PSMN030-150P,127 application, or PSMN030-150P,127 equivalent, key selection criteria include thermal resistance (R_th(j-mb) = 0.6 K/W), fast switching performance (Q_GD = 38–50 nC), avalanche ruggedness (E_AS = 300 mJ), and mounting-base–referenced power dissipation capability.

Technical Context

This device uses TrenchMOS silicon technology to achieve low conduction losses and high thermal efficiency. Its gate threshold voltage (V_GS(th)) ranges from 2–4 V at 25 °C and drops to 1 V at 175 °C, enabling robust turn-on across industrial temperature ranges while maintaining safe margin against spurious conduction.

The internal structure integrates the mounting base electrically with the drain terminal, supporting direct heatsink attachment and minimizing thermal path resistance. Dynamic parameters-including Q_G(tot) = 98 nC, C_iss = 3680 pF, and t_r/t_f = 71/76 ns-support operation in high-frequency SMPS topologies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage before breakdown; supports 120 V bus designs with 25 % safety margin.
R_DS(on)	24 mΩ (typ) @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.5 W conduction loss at 25 A, critical for high-current output stages.
I_D	55.5 A @ T_mb = 25 °C - Continuous current rating referenced to mounting base temperature, not ambient; enables compact heatsink sizing.
R_th(j-mb)	0.6 K/W - Thermal resistance from junction to mounting base; allows ~250 W dissipation with ≤150 K rise above heatsink temperature.
Q_GD	38–50 nC - Gate-drain charge determines Miller plateau duration; directly impacts switching loss and EMI in hard-switched converters.
E_AS	300 mJ - Non-repetitive avalanche energy rating; provides robustness against inductive switching transients without external snubbers.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures reliable enhancement-mode turn-on with standard 5 V or 10 V gate drivers; low drift over temperature improves system stability.

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base electrically connected to drain. Three leads: Gate (pin 1), Drain (pin 2 + mounting base), Source (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; low input capacitance (C_iss = 3680 pF) eases driver selection.
2 (D) + Mounting Base	Drain	Main high-side power terminal; mounting base is electrically tied to drain, enabling low-inductance heatsink connection and simplified thermal design.
3 (S)	Source	Power return node; serves as reference for gate drive; internal source inductance (L_S = 7.5 nH) affects high-speed switching behavior.

Key Features

Feature	Design Value
Low R_DS(on)	24 mΩ typ at 10 V drive enables high-efficiency power conversion with minimal conduction loss in high-current paths.
TrenchMOS technology	Delivers superior cell density and lower gate charge vs planar MOSFETs, improving switching efficiency in high-frequency SMPS.
Mounting-base–drain integration	Reduces thermal resistance to 0.6 K/W and eliminates need for insulating pads in many heatsink configurations.
Avalanche-rated	300 mJ non-repetitive energy handling allows safe operation under unclamped inductive switching events without derating.
High-temperature V_GS(th) stability	Threshold remains ≥1 V up to 175 °C junction, preventing thermal runaway during overload or transient conditions.

Applications

Server VRMs

Industrial AC-DC Adapters

Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage in enterprise servers.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 300–600 kHz with 25–50 A per phase.

Use Value: Low R_DS(on) and high I_D rating reduce conduction loss and thermal stress; mounting-base–drain interface simplifies thermal interface to cold plate.

Use Scenario: Secondary-side synchronous rectification in 1–3 kW industrial AC-DC power supplies with universal input.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or LLC resonant converter output stage.

Use Value: 150 V V_DS withstands reflected transients on 48 V or 54 V outputs; avalanche rating protects against transformer leakage inductance spikes.

Telecom DC-DC Modules

Renewable Energy Inverters

Use Scenario: Isolated 48 V–12 V intermediate bus converters in 5G base station power systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Fast switching (t_r/t_f = 71/76 ns) and low Q_GD minimize dead-time losses and improve ZVS margin.

Use Scenario: DC link switching in string inverters converting PV array output (up to 1000 V) to grid-compatible AC.

IC Role / Device Role / Timing Role: Auxiliary high-voltage buffer or auxiliary supply switch in control circuitry requiring 150 V isolation.

Use Value: 175 °C max junction temperature and stable V_GS(th) support operation in thermally constrained outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V V_DS, 110 A I_D, 7.5 mΩ R_DS(on), TO-220FP package (isolated tab)	Limited to ≤100 V systems; higher current but lower voltage rating; insulated package avoids grounding conflicts.	Select when higher current and electrical isolation between tab and drain are required, and 100 V rating suffices.
IRFP4668PBF	150 V V_DS, 65 A I_D, 22 mΩ R_DS(on), TO-247AC package; higher Q_G (130 nC)	Higher peak current and slightly lower R_DS(on), but larger footprint and slower switching due to higher gate charge.	Prefer for ultra-low conduction loss in lower-frequency (<100 kHz) applications where board space and thermal mass allow TO-247 mounting.

Compared with STP110N10F7 and IRFP4668PBF, PSMN030-150P,127 offers optimal balance of 150 V rating, 55.5 A current, 24 mΩ on-resistance, and TO-220AB thermal performance-making it especially suitable for space-constrained, high-frequency industrial and telecom SMPS where mounting-base thermal coupling is advantageous.

Availability

PSMN030-150P,127 is available at Aetrix Electronics and suitable for server VRMs, industrial AC-DC adapters, and telecom DC-DC modules requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for PSMN030-150P,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

This part belongs to the SiliconMAX standard-level TrenchMOS family, engineered for cost-sensitive yet thermally demanding power conversion applications where robustness, consistency, and manufacturability are prioritized over ultra-high frequency or ultra-low R_DS(on).

FAQ

What is the maximum continuous drain current for PSMN030-150P,127?

The maximum continuous drain current is 55.5 A at mounting base temperature (T_mb) = 25 °C. At T_mb = 100 °C, it derates to 39 A. This rating assumes proper heatsinking via the electrically connected mounting base and accounts for thermal resistance R_th(j-mb) = 0.6 K/W.

Is the mounting base electrically isolated from the drain?

No-the mounting base is internally connected to the drain terminal (pin 2). This configuration reduces thermal resistance and simplifies mechanical mounting but requires electrical isolation from the heatsink if the drain node is not at chassis ground potential.

Can PSMN030-150P,127 be used in avalanche mode repeatedly?

No-it is rated for non-repetitive avalanche energy only (E_AS = 300 mJ, unclamped, T_j(init) = 25 °C). Repeated avalanche operation is not characterized or guaranteed and may cause cumulative degradation or failure.

What gate drive voltage is recommended for full enhancement?

A minimum gate-source voltage of 10 V is recommended to achieve the specified R_DS(on) of 24 mΩ. The device begins conducting at V_GS(th) = 2–4 V (25 °C), but 10 V ensures low on-resistance and stable operation across temperature and process variation.

PSMN030-150P,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 55.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3680 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN030-150P,127 FAQ

1.How can I place an order for PSMN030-150P,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN030-150P,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN030-150P,127 reliable?

The price and inventory of PSMN030-150P,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN030-150P,127 is usually 5 days.

3.What payment methods are accepted for PSMN030-150P,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN030-150P,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN030-150P,127?

PSMN030-150P,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN030-150P,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN030-150P,127?

For technical support, including PSMN030-150P,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN030-150P,127 requirements.

6.How does Aetrix verify that PSMN030-150P,127 is sourced from the original manufacturer or authorized distributors?

All PSMN030-150P,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN030-150P,127 meets industry standards.

7.What is the process for return or replacement of PSMN030-150P,127?

All PSMN030-150P,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN030-150P,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN030-150P,127 part is unused and in its original packaging.

Return procedure for PSMN030-150P,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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