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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Nexperia USA Inc. PSMN033-100HLX

Name: PSMN033-100HLX
Brand: Nexperia USA Inc.
SKU: PSMN033-100HLX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN033-100HLX

Manufacturer:: Nexperia USA Inc.

Category:: FET, MOSFET Arrays

Package:: SOT-1205, 8-LFPAK56

Datasheet:: PSMN033-100HLX.pdf

Description:: MOSFET 2N-CH 100V 26A LFPAK56D

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Product details

Overview

PSMN033-100HL from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 100 V V_DS, 31 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 73.4 mΩ at V_GS = 5 V and T_j = 175 °C. It delivers 26 A continuous drain current at T_mb = 25 °C and supports synchronous rectification and high-efficiency DC-DC conversion in industrial power supplies.

For engineers reviewing the PSMN033-100HL datasheet, PSMN033-100HL pinout, PSMN033-100HL application, or PSMN033-100HL equivalent, key selection criteria include dual-FET integration in a single LFPAK56D footprint, low Q_r (47.3 nC) for reduced switching loss in hard-switched topologies, and 175 °C maximum junction temperature for high-reliability thermal operation.

Technical Context

This dual MOSFET integrates two independent N-channel TrenchMOS devices sharing a common mounting base, enabling compact half-bridge or dual-phase configurations without discrete paralleling. Its LFPAK56D package uses copper clip bonding and flexible leads to achieve low R_th(j-mb) of 2.36 K/W and high peak drain current (I_DM = 106 A).

The device features logic-level gate drive compatibility (V_GS(th) = 1.4–2.1 V typ), low reverse recovery charge (Q_r = 47.3 nC), and avalanche ruggedness (E_AS = 74 mJ), making it suitable for flyback, forward, and synchronous rectifier circuits where body diode performance and thermal robustness are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switching in 48 V–96 V input systems
R_DS(on) @ V_GS = 10 V, T_j = 25 °C	25.6 mΩ typ - Enables <1.3 W conduction loss at 9 A, supporting high-efficiency power stages
R_DS(on) @ V_GS = 5 V, T_j = 175 °C	73.4 mΩ typ - Ensures reliable logic-level drive under worst-case thermal conditions
Q_r	47.3 nC - Reduces body diode switching loss and EMI in synchronous rectifiers
I_D continuous @ T_mb = 25 °C	26 A - Supports >200 W output in compact board space with standard thermal pads
R_th(j-mb)	2.36 K/W - Enables direct thermal coupling to heatsink or PCB copper, improving power density
E_AS	74 mJ - Withstands single-pulse inductive energy during overcurrent events without failure

Pinout & Package

LFPAK56D (SOT1205) is a dual-power SO-8 variant with exposed mounting base, optimized for high-current, low-inductance operation. It features copper clip interconnects and flexible leads for mechanical stress relief and enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1	S1	Source terminal for FET1 - connects to low-side return path in half-bridge configuration
2	G1	Gate terminal for FET1 - requires <5 V logic-compatible drive with 27.3 nC total gate charge
3	S2	Source terminal for FET2 - electrically isolated from S1; enables independent source referencing
4	G2	Gate terminal for FET2 - fully independent control; supports asymmetric or interleaved drive schemes
5, 6	D2	Drain terminals for FET2 - paralleled internally for lower inductance and higher current handling
7, 8	D1	Drain terminals for FET1 - paralleled internally; shares mounting base with D2 for thermal uniformity

Key Features

Feature	Design Value
Dual-FET integration in single LFPAK56D	Reduces PCB area by ~40% vs. two discrete SO-8 MOSFETs while maintaining isolation between source nodes
Copper clip + flexible leads	Lowers parasitic inductance (<1.5 nH per drain loop) and improves thermal cycling reliability beyond standard wire-bond packages
175 °C max junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating below 100% load
Low Q_r (47.3 nC)	Minimizes reverse recovery loss and associated voltage overshoot in synchronous rectifier applications
TrenchMOS technology	Delivers stable R_DS(on) over temperature and superior dv/dt immunity compared to planar MOSFETs

Applications

Synchronous Rectifier

Forward Converter

Use Scenario: Secondary-side rectification in isolated 48 V telecom PSUs with <1% efficiency target.

IC Role / Device Role / Timing Role: Dual-FET replaces two discrete Schottky diodes; FET1 handles main output, FET2 supports auxiliary rail or current sharing.

Use Value: Achieves >95% full-load efficiency due to 25.6 mΩ R_DS(on) and 47.3 nC Q_r, reducing conduction and switching losses versus diode-based designs.

Use Scenario: Primary-side switch and synchronous rectifier in 200–500 W industrial forward converters.

IC Role / Device Role / Timing Role: FET1 operates as main PWM switch; FET2 functions as controlled rectifier on secondary side with precise gate timing.

Use Value: Dual integration eliminates layout mismatch between switches, improving cross-regulation and reducing EMI from gate loop asymmetry.

Flyback Converter

Uninterruptible Power Supply (UPS)

Use Scenario: High-density 60–120 W flyback with active clamp or quasi-resonant topology.

IC Role / Device Role / Timing Role: FET1 serves as main power switch; FET2 acts as active clamp switch or synchronous rectifier in secondary winding.

Use Value: Low Q_GD (11 nC) and fast turn-off delay (39.5 ns) enable tight dead-time control and minimize overlap loss.

Use Scenario: Inverter stage and battery charging circuitry in line-interactive UPS systems.

IC Role / Device Role / Timing Role: FET1 manages AC/DC conversion; FET2 controls bidirectional battery interface with reverse current blocking.

Use Value: 100 V rating and 175 °C T_j support wide input range (90–264 VAC) and extended runtime under elevated ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NX3008PBK	Single-channel 100 V, 30 mΩ LFPAK56; no dual-FET integration	Requires two devices for same functionality; increases layout area and gate drive complexity	Choose when independent thermal management or asymmetric FET sizing is required
PSMN1R0-100BSE	Single-channel 100 V, 1.0 mΩ; TO-220FP package; higher R_DS(on) at logic-level drive	Not logic-level compatible; needs 10 V gate drive; unsuitable for 3.3 V controller interfaces	Prefer only for high-current, low-frequency applications where gate drive voltage ≥10 V is available

Compared with NX3008PBK and PSMN1R0-100BSE, PSMN033-100HL uniquely combines dual-FET integration, logic-level drive capability, and low Q_r in a thermally efficient LFPAK56D package-enabling compact, high-efficiency synchronous rectification without compromising layout simplicity or thermal margin.

Availability

PSMN033-100HL is available at Aetrix Electronics and suitable for industrial drives, uninterruptible power supplies, and forward/flyback converters requiring stable component supply across multi-year production cycles.

Supply support for PSMN033-100HL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in MOSFETs, diodes, and ESD protection devices.

This part belongs to Nexperia's TrenchMOS logic-level dual-FET product line, engineered specifically for space-constrained, high-efficiency power conversion in industrial and telecom infrastructure applications.

FAQ

What is the maximum safe operating temperature for PSMN033-100HL?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –55 °C to +175 °C. Thermal design must ensure R_th(j-mb) = 2.36 K/W is maintained via proper mounting base contact; exceeding 175 °C risks permanent parametric shift and bond wire degradation.

Can PSMN033-100HL be driven directly by a 3.3 V microcontroller GPIO?

No. While V_GS(th) starts at 1.4 V, R_DS(on) rises sharply below 4.5 V - at V_GS = 3.3 V and T_j = 25 °C, R_DS(on) exceeds 60 mΩ. Reliable operation requires ≥4.5 V gate drive; a dedicated level-shifting driver or gate driver IC is recommended for 3.3 V controllers.

How does the dual-drain pin configuration (pins 5+6 and 7+8) affect PCB layout?

Pins 5 & 6 are internally paralleled D2 terminals; pins 7 & 8 are internally paralleled D1 terminals. This dual-pin arrangement reduces package inductance and improves current sharing - PCB layout should use symmetric, equal-length traces to both drain pins and avoid stubs to maintain low EMI and thermal balance.

Is PSMN033-100HL automotive qualified?

No. This device is not AEC-Q101 qualified and lacks automotive-specific testing or qualification documentation. It is intended for industrial, telecom, and consumer power applications only; use in automotive systems requires formal validation and is not supported by Nexperia's warranty or reliability data.

PSMN033-100HLX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1205, 8-LFPAK56

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 100V

Current - Continuous Drain (Id) @ 25°C:: 26A (Ta)

Rds On (Max) @ Id, Vgs:: 31mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 27.3nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:: 3168pF @ 25V

Power - Max:: 64W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56D

PSMN033-100HLX FAQ

1.How can I place an order for PSMN033-100HLX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN033-100HLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN033-100HLX reliable?

The price and inventory of PSMN033-100HLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN033-100HLX is usually 5 days.

3.What payment methods are accepted for PSMN033-100HLX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN033-100HLX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN033-100HLX?

PSMN033-100HLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN033-100HLX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN033-100HLX?

For technical support, including PSMN033-100HLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN033-100HLX requirements.

6.How does Aetrix verify that PSMN033-100HLX is sourced from the original manufacturer or authorized distributors?

All PSMN033-100HLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN033-100HLX meets industry standards.

7.What is the process for return or replacement of PSMN033-100HLX?

All PSMN033-100HLX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN033-100HLX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN033-100HLX part is unused and in its original packaging.

Return procedure for PSMN033-100HLX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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