Nexperia USA Inc. PSMN034-100PS,127

Overview

PSMN034-100PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 100 V drain-source voltage, 34.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 32 A continuous drain current at T_mb = 25 °C. It operates up to 175 °C junction temperature and is qualified for industrial power conversion and motor control systems.

For engineers reviewing the PSMN034-100PS datasheet, PSMN034-100PS pinout, PSMN034-100PS application, or PSMN034-100PS equivalent, this device supports high-efficiency switching in DC-DC converters, server power supplies, load switching, and motor drive stages where standard gate drive (10 V) and avalanche ruggedness (42 mJ) are critical selection criteria.

Technical Context

This MOSFET uses planar silicon technology with optimized channel geometry to achieve low conduction loss while maintaining robust safe operating area (SOA) up to 100 V and 127 A peak pulsed current. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains ≥1 V at 175 °C, enabling reliable turn-on under elevated temperature conditions.

The device integrates an intrinsic body diode with 0.85–1.2 V forward voltage at 15 A and 38 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance from junction to mounting base is 0.9–1.7 K/W, enabling direct heatsink mounting without isolation washers in many industrial designs.

Key Specifications

Pinout & Package

PSMN034-100PS is housed in a plastic TO-220AB (SOT78) package with three leads and a metal mounting base electrically connected to the drain terminal. The package features a single mounting hole and is designed for vertical heatsink attachment with minimal thermal interface resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRF540NPBF, PSMN034-100PS delivers 22% lower conduction loss and 68% higher avalanche energy; versus STP110N10F7, it trades 67% lower gate charge for 2× higher R_DS(on), favoring medium-frequency, gate-driver-constrained designs.

Availability

PSMN034-100PS is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply across multi-year production cycles.

Supply support for PSMN034-100PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial power conversion, where robustness, manufacturability, and consistent parametric performance are prioritized over ultra-low R_DS(on) or advanced packaging.

FAQ

What is the maximum continuous drain current for PSMN034-100PS at 100 °C mounting base temperature?

The maximum continuous drain current is 22 A at T_mb = 100 °C, per the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated temperatures, and must be applied in heatsink-limited designs such as enclosed industrial power supplies.

Is PSMN034-100PS suitable for use with 5 V gate drive?

No - PSMN034-100PS is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. At V_GS = 5 V, R_DS(on) increases significantly (≥120 mΩ), causing excessive conduction loss and thermal stress. It is incompatible with 3.3 V or 5 V logic-level gate drivers without level-shifting.

Does the mounting base require electrical isolation from the heatsink?

Yes - the mounting base is internally connected to the drain terminal. If the drain node is not at chassis ground potential (e.g., high-side switch), an electrically insulating thermal pad or mica washer must be used between the TO-220AB base and the heatsink to prevent short circuits and ensure safety compliance.

What is the typical reverse recovery charge (Q_r) of the integrated body diode?

The typical reverse recovery charge is 59 nC, measured at I_S = 5 A, dI_S/dt = 100 A/µs, V_DS = 50 V, and V_GS = 0 V. This value directly impacts switching loss in freewheeling paths and should be factored into efficiency calculations for hard-switched topologies like buck converters.