Nexperia USA Inc. PSMN035-150B,118

Overview

PSMN035-150B,118 from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for high-efficiency switching in power conversion stages. It delivers 150 V drain-source voltage rating, 30 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 25 A, 50 A continuous drain current at T_mb = 25 °C, and 250 W total power dissipation - enabling use in high-current DC-DC converters and offline SMPS primary-side switches.

For engineers reviewing the PSMN035-150B,118 datasheet, PSMN035-150B,118 pinout, PSMN035-150B,118 application, or PSMN035-150B,118 equivalent, key selection criteria include its 0.6 K/W junction-to-mounting-base thermal resistance, 33 nC gate-drain charge, avalanche ruggedness (460 mJ unclamped), fast switching (t_r = 138 ns), and compatibility with standard-level gate drive (V_GS(th) = 2–4 V).

Technical Context

This device employs TrenchMOS silicon technology to achieve low conduction loss and fast switching performance. Its gate threshold voltage (2–4 V at 25 °C) supports direct drive from 3.3 V/5 V controllers, while the 150 V V_DS rating and 50 A I_D capability suit it for 48 V input and universal AC-input topologies.

The integrated source-drain diode exhibits 0.85–1.2 V forward voltage at 25 A and 118 ns reverse recovery time, enabling synchronous rectification and freewheeling in hard-switched converters. Thermal design leverages the mounting base (connected to drain) for low-R_th(j-mb) = 0.6 K/W heat transfer to heatsinks.

Key Specifications

Pinout & Package

PSMN035-150B,118 uses the SOT404 (D2PAK) plastic surface-mount package with three leads: Gate (pin 1), Source (pin 3), and Drain (pin 2). The mounting base (mb) is electrically connected to the drain and serves as the primary thermal path. Pin 2 is internally connected to the drain but not externally accessible for signal routing - only the mounting base provides drain connection for thermal and electrical purposes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N15F7 and IRF1404ZPBF, PSMN035-150B,118 offers optimal balance of 150 V rating, 30 mΩ on-resistance, and 0.6 K/W thermal resistance in surface-mount D2PAK - making it superior for space-constrained, high-frequency, medium-power industrial and computing power supplies.

Availability

PSMN035-150B,118 is available at Aetrix Electronics and suitable for switched-mode power supplies, industrial DC-DC converters, and motor drive half-bridges requiring stable component supply across multi-year production cycles.

Supply support for PSMN035-150B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The SiliconMAX series targets cost-sensitive, high-efficiency power conversion in computing, communications, consumer, and industrial equipment - emphasizing low R_DS(on), fast switching, and rugged thermal packaging.

FAQ

What is the maximum continuous drain current for PSMN035-150B,118 at 100 °C mounting base temperature?

The maximum continuous drain current is 36 A at T_mb = 100 °C, as specified in Table 4 (Limiting values). This reflects thermal derating due to reduced heat dissipation capacity at elevated mounting temperatures - designers must ensure heatsink design maintains T_mb ≤100 °C for sustained 36 A operation.

Does PSMN035-150B,118 have an integrated body diode, and what are its key parameters?

Yes, it includes an integrated source-drain diode with V_SD = 0.85–1.2 V at I_S = 25 A and T_j = 25 °C, and t_rr = 118 ns at I_S = 20 A, dI/dt = −100 A/µs. These values support freewheeling in buck and half-bridge topologies but require careful layout to minimize ringing during reverse recovery.

Can PSMN035-150B,118 be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage ranges from 2–4 V at 25 °C, but full enhancement requires ≥10 V V_GS to achieve rated R_DS(on). At 3.3 V, R_DS(on) exceeds 150 mΩ, causing excessive conduction loss. A dedicated gate driver or level-shifter is required for reliable switching.

What is the significance of the "mounting base connected to drain" specification?

The mounting base is electrically tied to the drain terminal and serves as the sole low-impedance thermal and electrical path for drain current and heat removal. PCB layout must connect this base to a large copper area or heatsink - no separate drain trace is needed or recommended, and pin 2 must not be routed as a signal.