My Inquiry
My Account
Nexperia USA Inc. PSMN038-100HSX
- Part No.:
- PSMN038-100HSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN038-100HSX.pdf
- Description:
- MOSFET 2N-CH 100V 21.4A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:1,190
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PSMN038-100HSX from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated 100 V VDS, 37.6 mΩ RDS(on) @ 10 V VGS, 21.4 A continuous drain current at Tmb = 25 °C, and qualified for 175 °C junction operation - deployed as synchronous rectifier switches in high-efficiency DC-DC converters.
For engineers reviewing the PSMN038-100HSX datasheet, PSMN038-100HSX pinout, PSMN038-100HSX application, or PSMN038-100HSX equivalent, this device is selected for dual-FET topologies requiring low conduction loss, robust avalanche energy (46 mJ), and thermal reliability in compact surface-mount power stages.
Technical Context
This dual MOSFET integrates two identical N-channel TrenchMOS cells in a single LFPAK56D package with shared mounting base and independent gate/source/drain terminals. Each FET supports 100 V blocking, 21.4 A continuous current, and exhibits matched RDS(on) temperature coefficient up to 175 °C.
Its gate charge profile (QG(tot) = 25.9 nC, QGD = 9.7 nC) enables fast switching with low Miller-induced shoot-through risk, while low Qr = 44 nC and soft reverse recovery support high-frequency synchronous rectification without snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source voltage; defines safe operating range in flyback/forward primary-side and secondary-side clamp circuits. |
| RDS(on) @ 10 V, 25 °C | 37.6 mΩ - On-resistance per FET at nominal gate drive; determines I²R conduction loss in 12–48 V output rails. |
| ID continuous @ Tmb = 25 °C | 21.4 A - Max steady-state current per channel with PCB heatsinking; supports >50 W per FET in well-designed layouts. |
| Qr | 44 nC - Body diode recovered charge; enables efficient zero-voltage switching (ZVS) in resonant topologies and reduces EMI in synchronous rectifiers. |
| EAS | 46 mJ - Single-pulse unclamped avalanche energy; provides ruggedness against inductive turn-off transients in motor drives and UPS inverters. |
| Tj max | 175 °C - Maximum junction temperature; allows operation in sealed industrial enclosures without active cooling. |
| Rth(j-mb) | 2.84 K/W - Junction-to-mounting-base thermal resistance; enables direct thermal coupling to copper planes or heatsinks for high-power density designs. |
Pinout & Package
LFPAK56D (SOT1205) is a dual-channel, single-ended surface-mount package with exposed copper mounting base for low-inductance, high-current routing and enhanced thermal transfer. Dimensions: 4.7 × 5.3 × 1.05 mm (L × W × H), 8-lead configuration with dual drain-source-gate symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of FET1 - connected to low-side return path; electrically isolated from S2 but thermally coupled via shared base. |
| 2 | G1 | Gate terminal of FET1 - requires <20 V absolute rating; driven independently to enable asymmetric control in half-bridge configurations. |
| 3 | S2 | Source terminal of FET2 - separate return node for dual-output or interleaved converter designs. |
| 4 | G2 | Gate terminal of FET2 - decoupled gate drive minimizes cross-talk during simultaneous switching transitions. |
| 5, 6 | D2 | Drain terminals of FET2 - paralleled pins reduce current density and inductance in high-current paths (e.g., UPS battery interface). |
| 7, 8 | D1 | Drain terminals of FET1 - dual-pin layout supports >20 A peak current per FET with <0.5 nH parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Copper clip construction | Reduces bond wire inductance and improves current sharing between parallel drain pins, enabling clean 84 A pulsed operation (IDM). |
| 175 °C maximum junction temperature | Allows full-rated performance in ambient temperatures up to 105 °C when mounted on 2 oz copper with thermal vias - eliminates derating in industrial motor drives. |
| Low Qr (44 nC) and soft recovery | Minimizes voltage overshoot and ringing during body diode commutation, reducing need for external snubbers in 300–500 kHz LLC resonant converters. |
| Matched dual FET characteristics | Ensures balanced current sharing in interleaved forward converters and symmetric timing in synchronous buck-boost stages without external balancing resistors. |
Applications
| Synchronous Rectifier | Forward Converter |
|---|---|
|
Use Scenario: Secondary-side rectification in isolated 48 V input telecom PSUs delivering 12 V/20 A output. IC Role / Device Role / Timing Role: Dual N-channel MOSFET replacing Schottky diodes; each FET synchronously gated by controller's complementary outputs with dead-time control. Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling >95% efficiency at full load and eliminating diode thermal runaway risk. |
Use Scenario: Primary-side main switch and secondary-side synchronous rectifier in 36–75 V input industrial forward converter powering PLC I/O modules. IC Role / Device Role / Timing Role: One FET used as primary switch (hard-switched), the other as secondary rectifier (synchronously gated); both share thermal base for compact layout. Use Value: Enables single-package solution for primary/secondary power stage, cutting PCB area by 30% and simplifying thermal management in DIN-rail mounted enclosures. |
| Industrial Drive Inverter | Uninterruptible Power Supply (UPS) |
|
Use Scenario: Half-bridge leg in 24 V DC-fed servo drive controlling 100 W BLDC motor with regenerative braking. IC Role / Device Role / Timing Role: Upper and lower switches in half-bridge topology; operated with complementary PWM and active freewheeling using body diode or synchronous conduction. Use Value: Avalanche ruggedness (46 mJ) withstands inductive kickback during rapid deceleration; 175 °C rating sustains operation during extended overload conditions. |
Use Scenario: Bidirectional DC-DC stage in online double-conversion UPS managing battery charging and inverter backup paths. IC Role / Device Role / Timing Role: Dual FETs configured as back-to-back switches for battery isolation and polarity-reversal protection in 48 V battery bank interface. Use Value: Low RDS(on) (37.6 mΩ) limits voltage drop during 15 A charge/discharge cycles; matched parameters ensure symmetrical on-resistance in both directions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC028N10NS3 | Single-channel 100 V, 2.8 mΩ @ 10 V, SO-8 - lacks dual-FET integration and LFPAK56D thermal performance. | Requires two discrete packages for dual function; higher Rth(j-a) (62 K/W vs. 2.84 K/W to base) limits power density. | Select when board space permits discrete layout and ultra-low RDS(on) dominates over thermal integration. |
| Vishay SiZF300DT | Dual 100 V, 3.0 mΩ @ 10 V in PowerPAIR® 3x3 - lower RDS(on) but rated only to 150 °C Tj and no specified avalanche energy. | Better conduction loss at low current, but unsuitable for unclamped inductive loads or high-ambient industrial environments. | Select for high-frequency, low-duty-cycle applications where avalanche stress is absent and peak efficiency at light load is critical. |
Compared with BSC028N10NS3 and SiZF300DT, PSMN038-100HSX trades moderate RDS(on) for superior thermal coupling, proven avalanche ruggedness, and integrated dual-channel functionality - making it optimal for space-constrained, thermally demanding industrial power stages.
Availability
PSMN038-100HSX is available at Aetrix Electronics and suitable for synchronous rectifiers, forward/flyback converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for PSMN038-100HSX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for industrial, automotive, and computing applications.
PSMN038-100HSX belongs to Nexperia's TrenchMOS dual-FET portfolio, engineered specifically for high-efficiency, high-density power conversion where thermal integration and ruggedness outweigh ultra-low RDS(on) alone.
FAQ
What is the maximum continuous drain current per channel at 100 °C mounting base temperature?
At Tmb = 100 °C, the continuous drain current per channel is 15 A, as specified in Table 5 (Limiting values). This reflects thermal derating due to reduced heat dissipation capability at elevated mounting temperatures, and aligns with the normalized power dissipation curve in Figure 1.
Can PSMN038-100HSX be used in avalanche mode for clamping inductive loads?
Yes - it is rated for non-repetitive drain-source avalanche energy of 46 mJ under defined conditions (ID = 21.4 A, Vsup ≤ 100 V, RGS = 50 Ω, Tj(init) = 25 °C). This rating is validated per IEC 60134 and limited by junction temperature reaching 175 °C, making it suitable for controlled inductive turn-off in motor drives and UPS inverters.
How does the LFPAK56D package improve thermal performance versus standard SO-8?
LFPAK56D achieves Rth(j-mb) = 2.84 K/W - over 5× better than typical SO-8 (≈15–20 K/W) - by replacing bond wires with copper clips and exposing a large metal mounting base directly soldered to PCB copper. This enables >90% of heat to exit through the base rather than through leads or ambient air.
Is gate drive compatibility confirmed for 5 V logic-level controllers?
No - PSMN038-100HSX is a standard-level MOSFET with VGS(th) = 2.4–4.5 V and RDS(on) specified at VGS = 10 V. At 5 V gate drive, RDS(on) rises significantly (≥100 mΩ at 175 °C), increasing conduction loss. It requires ≥10 V gate drive for full performance; use logic-level alternatives like PSMN2R5-100YSF for 5 V systems.
PSMN038-100HSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 21.4A (Ta)
- Rds On (Max) @ Id, Vgs:
- 37.6mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1533pF @ 25V
- Power - Max:
- 53W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN038-100HSX FAQ
1.How can I place an order for PSMN038-100HSX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN038-100HSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN038-100HSX reliable?
The price and inventory of PSMN038-100HSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN038-100HSX is usually 5 days.
3.What payment methods are accepted for PSMN038-100HSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN038-100HSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN038-100HSX?
PSMN038-100HSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN038-100HSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN038-100HSX?
For technical support, including PSMN038-100HSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN038-100HSX requirements.
6.How does Aetrix verify that PSMN038-100HSX is sourced from the original manufacturer or authorized distributors?
All PSMN038-100HSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN038-100HSX meets industry standards.
7.What is the process for return or replacement of PSMN038-100HSX?
All PSMN038-100HSX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN038-100HSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN038-100HSX part is unused and in its original packaging.
Return procedure for PSMN038-100HSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PSMN038-100HSX Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
