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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN038-100K,518

Name: PSMN038-100K,518
Brand: Nexperia USA Inc.
SKU: PSMN038-100K,518
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN038-100K,518

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: PSMN038-100K,518.pdf

Description:: MOSFET N-CH 100V 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,168

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Product details

Overview

PSMN038-100K from Nexperia is an N-channel TrenchMOS silicon power MOSFET in SO8 (SOT96-1) package, designed for high-frequency switching in DC-DC converters and SMPS. It features 100 V V_DS, 33 mΩ R_DS(on) @ 10 V_GS/25 °C, 6.3 A continuous drain current, and fast switching with 16 nC Q_GD, enabling efficient synchronous rectification in computing and industrial power rails.

For engineers reviewing the PSMN038-100K datasheet, PSMN038-100K pinout, PSMN038-100K application, or PSMN038-100K equivalent, this device is selected for low-conduction-loss, standard-level gate drive compatibility, thermal performance on metal-clad substrates, and validated use in motherboard VRMs and isolated flyback secondary-side switches.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) and optimized charge distribution, supporting hard-switching topologies up to several hundred kHz. Its 20 K/W R_th(j-sp) enables direct thermal coupling to PCB copper, and its 100 V breakdown rating accommodates 48 V input systems with margin.

The device integrates a body diode with 0.7 V V_SD @ 2.3 A and 85 ns t_rr, suitable for freewheeling and synchronous rectification without external Schottky supplementation. Gate threshold voltage ranges from 1.2 V (150 °C) to 6 V (−55 °C), ensuring robust turn-on across temperature extremes under 10 V gate drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus designs with ≥2× overvoltage margin in telecom/industrial SMPS
R_DS(on)	33 mΩ @ 10 V_GS, 25 °C - delivers ≤1.1 W conduction loss at 6 A, reducing heatsink requirements
I_D	6.3 A @ T_sp = 80 °C - enables compact layout in space-constrained motherboard VRMs
Q_GD	16 nC typ - minimizes Miller-induced switching delay, critical for >300 kHz PWM control
R_th(j-sp)	20 K/W - allows direct junction-to-solder-point thermal path on 2 oz copper, simplifying thermal design
C_iss	1740 pF - balances gate drive strength and EMI in high-speed buck converter high-side switches
V_GS(th)	2–4 V @ 25 °C - ensures reliable enhancement-mode turn-on with standard 3.3 V/5 V logic-level controllers

Pinout & Package

PSMN038-100K uses the SOT96-1 (SO8) plastic small-outline package with 3.9 mm body width and gull-wing leads, optimized for automated assembly and thermal conduction via exposed drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source connection; three parallel pins reduce bond wire inductance and improve current sharing
4	Gate (G)	Single gate input; low Q_G(tot) = 43 nC enables fast, low-power gate driving
5, 6, 7, 8	Drain (D)	Four parallel drain terminals provide low-inductance, high-current return path to ground plane

Key Features

Feature	Design Value
Low R_DS(on) with TrenchMOS	33 mΩ @ 25 °C enables <1.1 W I²R loss at 6 A, reducing thermal stress in dense layouts
Fast switching with low Q_GD	16 nC gate-drain charge minimizes Miller plateau duration, improving efficiency above 250 kHz
Robust thermal resistance	20 K/W junction-to-solder-point allows direct mounting on metal-core PCBs without thermal vias
Wide V_GS rating	±20 V absolute max gate-source voltage supports transient immunity in noisy power environments
Body diode with low t_rr	85 ns reverse recovery time prevents shoot-through in synchronous rectifier configurations

Applications

Computer Motherboards

DC-to-DC Converters

Use Scenario: Core voltage regulation for CPU/GPU VRMs on ATX motherboards with multi-phase buck topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 10 V gate drive.

Use Value: 33 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 50 mΩ devices, lowering phase temperature rise by ~12 °C at 40 A per phase.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V/5 V flyback or forward converters for network equipment.

IC Role / Device Role / Timing Role: N-channel power switch driven by transformer-coupled or active gate driver, replacing Schottky diodes.

Use Value: 0.7 V V_SD and 85 ns t_rr cut forward drop and switching loss, increasing converter efficiency from 87% to 91% at full load.

Switched-Mode Power Supplies

Industrial Motor Control

Use Scenario: High-side switch in 24–48 V input industrial SMPS for PLC I/O modules and sensor power rails.

IC Role / Device Role / Timing Role: Standard-level N-channel MOSFET controlled by bootstrap gate driver in half-bridge configuration.

Use Value: 100 V V_DS withstands 48 V bus transients (IEC 61000-4-5 Level 3), while 6.3 A rating supports 15 W output with margin.

Use Scenario: H-bridge low-side driver for 24 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: N-channel switching element in PWM-controlled motor driver IC companion stage.

Use Value: Fast 25 ns rise/fall times enable precise 20 kHz PWM duty cycle control, minimizing audible noise and torque ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	Higher R_DS(on) (40 mΩ), same SO8 package, 100 V rating, but higher Q_GD (22 nC)	Lower switching efficiency above 250 kHz due to longer Miller plateau	Prefer PSMN038-100K where high-frequency operation and thermal headroom are critical
DMN6075SFD-13	Lower V_DS (60 V), lower R_DS(on) (22 mΩ), same SO8, but unsuitable for 48 V bus systems	Limited to ≤36 V input applications; fails safety margin in telecom/industrial 48 V designs	Select PSMN038-100K when 100 V rating and IEC-compliant surge handling are required

Compared with IRF7470PBF and DMN6075SFD-13, PSMN038-100K uniquely balances 100 V robustness, 33 mΩ conduction loss, and 16 nC Q_GD for high-efficiency, high-frequency power conversion where thermal management and voltage margin are co-constrained.

Availability

PSMN038-100K is available at Aetrix Electronics and suitable for computer motherboard VRMs, industrial DC-DC converters, and switched-mode power supplies requiring stable component supply and long-term manufacturability.

Supply support for PSMN038-100K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to the SiliconMAX standard-level TrenchMOS family, engineered for cost-sensitive, thermally demanding power conversion in computing, communications, and industrial equipment where gate-drive simplicity and ruggedness are prioritized over logic-level compatibility.

FAQ

Is PSMN038-100K suitable for 5 V gate drive?

No - it is a standard-level MOSFET requiring ≥10 V_GS for full R_DS(on) specification. At 5 V_GS, R_DS(on) rises to ~80 mΩ, increasing conduction loss significantly. Use only with 10 V or higher gate drive sources, such as bootstrap circuits or dedicated gate drivers.

What is the maximum pulsed drain current rating?

The peak drain current is 50 A for pulses ≤10 µs at T_sp = 25 °C, defined under safe operating area (SOA) conditions. This rating assumes minimal thermal accumulation and requires strict pulse-width/duty-cycle control to avoid junction overheating beyond 150 °C.

How does the body diode perform in synchronous rectification?

The integrated body diode has V_SD = 0.7 V @ 2.3 A and t_rr = 85 ns at 25 °C, enabling efficient freewheeling in buck and flyback topologies. Its low Q_r (0.3 µC) minimizes reverse recovery loss, but external Schottky clamping may still be needed in ultra-high-efficiency (>94%) designs.

Can PSMN038-100K be mounted directly to a heatsink?

No - the SOT96-1 package lacks a thermally enhanced exposed pad or metal tab. Thermal management relies on soldering pins 5–8 (drain) to large copper areas on FR4 or metal-core PCBs. For heatsink attachment, discrete TO-220 or LFPAK packages are required instead.

PSMN038-100K,518 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.3A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

PSMN038-100K,518 FAQ

1.How can I place an order for PSMN038-100K,518 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN038-100K,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN038-100K,518 reliable?

The price and inventory of PSMN038-100K,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN038-100K,518 is usually 5 days.

3.What payment methods are accepted for PSMN038-100K,518?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN038-100K,518 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN038-100K,518?

PSMN038-100K,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN038-100K,518 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN038-100K,518?

For technical support, including PSMN038-100K,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN038-100K,518 requirements.

6.How does Aetrix verify that PSMN038-100K,518 is sourced from the original manufacturer or authorized distributors?

All PSMN038-100K,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN038-100K,518 meets industry standards.

7.What is the process for return or replacement of PSMN038-100K,518?

All PSMN038-100K,518 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN038-100K,518, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN038-100K,518 part is unused and in its original packaging.

Return procedure for PSMN038-100K,518:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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