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Nexperia USA Inc. PSMN040-100MSEX

Part No.:
PSMN040-100MSEX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SOT-1210, 8-LFPAK33 (5-Lead)
Datasheet:
AetrixPSMN040-100MSEX.pdf
Description:
MOSFET N-CH 100V 30A LFPAK33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:55

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Product details

Overview

PSMN040-100MSEX from Nexperia is an N-channel 100 V, 36.6 mΩ standard-level MOSFET in LFPAK33 (SOT1210) package, engineered for high-power Power-over-Ethernet (PoE) power sourcing equipment (PSE). It delivers 30 A continuous drain current at Tmb = 25 °C, supports unclamped avalanche energy up to 54 mJ, and features enhanced forward-biased SOA for robust linear-mode operation in IEEE 802.3at and proprietary 60–90 W PoE systems.

For engineers reviewing the PSMN040-100MSEX datasheet, PSMN040-100MSEX pinout, PSMN040-100MSEX application, or PSMN040-100MSEX equivalent, key selection criteria include RDS(on) stability over temperature, gate charge (QG(tot) = 30 nC), thermal resistance (Rth(j-mb) = 1.44 K/W), avalanche ruggedness, and LFPAK33 mounting base integration for high-current PoE switch design.

Technical Context

This MOSFET operates in standard-level gate drive configuration (VGS(th) = 2.3–4 V typ), enabling direct compatibility with 10 V gate drivers without level-shifting. Its enhanced forward-biased safe operating area (SOA) ensures stable operation under PoE soft-start and current-limiting conditions where devices sustain high VDS × ID stress during inrush.

The LFPAK33 package integrates a thermally optimized mounting base directly connected to the drain, delivering low junction-to-mounting-base thermal resistance (1.44 K/W typ) and supporting >91 W total power dissipation at Tmb = 25 °C - critical for compact, high-density PSE board layouts with constrained airflow.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Withstands full PoE Class 8 (90 W) supply rail transients and clamp voltages without breakdown.
RDS(on)29.4–36.6 mΩ @ VGS = 10 V, ID = 10 A, Tj = 25 °C - Enables <1.5 W conduction loss at 20 A, reducing heatsink requirements.
QG(tot)30 nC - Supports efficient 100–500 kHz switching in active PoE PSE controllers with minimal gate driver power demand.
EAS54 mJ (unclamped) - Absorbs single-pulse inductive energy during fault events without failure, enhancing system reliability.
Rth(j-mb)1.44 K/W typ - Enables direct thermal coupling to PCB copper or heatsink via mounting base, improving thermal headroom by ~40% vs. SO-8.
ID (cont)30 A @ Tmb = 25 °C - Sustains peak PoE Class 8 load currents with margin for ambient derating in enclosed enclosures.
IDSS≤ 1 µA @ VDS = 100 V, Tj = 25 °C - Ensures ultra-low standby leakage in always-on PSE detection circuitry.

Pinout & Package

PSMN040-100MSEX uses the LFPAK33 (SOT1210) surface-mount package - a copper-clip-based, leadless construction with exposed mounting base for superior thermal and mechanical ruggedness. The package features four terminals plus integrated drain-connected mounting base (mb), optimized for high-current PoE switch placement on inner-layer thermal pads.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3Source (S)Three parallel source terminals reduce package inductance and resistive drop during fast switching transitions.
4Gate (G)Single gate input with 1.65 Ω internal gate resistance - simplifies external gate resistor selection for controlled turn-on/turn-off.
mbMounting Base / Drain (D)Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return path in PSE H-bridge or single-switch topologies.

Key Features

FeatureDesign Value
Enhanced forward-biased SOAEnables reliable linear-mode operation during PoE soft-start and current limiting without thermal runaway.
Ultra-low RDS(on)Reduces conduction losses below 1.5 W at 20 A, allowing smaller PCB footprints and lower thermal management cost.
LFPAK33 thermal performance1.44 K/W Rth(j-mb) enables >90 W power handling with direct mounting base cooling - no solderable heatsink required.
Low IDSS≤ 1 µA at 100 V ensures negligible standby current in always-on PSE detection and classification circuits.
High avalanche energy rating54 mJ unclamped EAS protects against inductive kickback during hot-swap or cable-fault events in powered device insertion.

Applications

IEEE 802.3bt PSE SwitchProprietary 90 W PoE Injector

Use Scenario: Dual-port IEEE 802.3bt power sourcing equipment delivering up to 90 W per port with real-time current monitoring and fault recovery.

IC Role / Device Role / Timing Role: Primary high-side switching element in active DC-DC converter stage, handling full output current with precise gate-controlled soft-start timing.

Use Value: Low RDS(on) and high SOA enable sustained 25 A operation during 100 ms inrush without thermal throttling or desaturation.

Use Scenario: Compact wall-mounted 90 W PoE injector for smart building infrastructure, requiring high power density and silent operation.

IC Role / Device Role / Timing Role: Main switching FET in flyback or active-clamp forward topology, driven by isolated gate driver with 10 V logic-level compatibility.

Use Value: LFPAK33 mounting base allows direct thermal interface to metal housing, eliminating external heatsinks while maintaining Tj < 125 °C at full load.

PoE Midspan Power FeederIndustrial Ethernet PSE Module

Use Scenario: Rack-mounted midspan unit supplying 60–90 W to multiple IP cameras, access points, and PTZ devices over Cat6a cabling.

IC Role / Device Role / Timing Role: High-reliability switching component in redundant dual-FET configurations, supporting hot-swap and auto-restart after short-circuit events.

Use Value: 54 mJ avalanche rating ensures survival of repeated cable surge events (IEC 61000-4-5 Level 3), reducing field failure rates.

Use Scenario: DIN-rail mounted industrial PoE module for factory automation, operating continuously in 70 °C ambient environments.

IC Role / Device Role / Timing Role: Linear-mode current regulator during PD classification and pre-charge phases, leveraging extended SOA for stable bias control.

Use Value: Stable RDS(on) across -40 to 175 °C (±20% variation) maintains accurate current regulation without calibration drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power PoE switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
PSMN1R0-100MSERDS(on) = 1.0 mΩ (lower), but QG(tot) = 110 nC (3.7× higher); larger LFPAK56 package.Better conduction efficiency at >40 A, but slower switching and higher gate drive loss limits use in >250 kHz designs.Select when thermal budget dominates and switching frequency is ≤150 kHz; avoid if space-constrained or high-frequency PSE controller used.
IPB180N10N3 GRDS(on) = 1.8 mΩ, TO-263 package, Rth(j-c) = 1.2 K/W, but no integrated mounting base; requires external heatsink.Higher power handling (180 A pulsed), but lacks PoE-optimized SOA and requires additional thermal interface hardware.Prefer only in legacy TO-263-based designs with existing heatsink infrastructure; not recommended for new compact PoE modules.

Compared with PSMN040-100MSEX, PSMN1R0-100MSE trades gate drive efficiency for lower conduction loss, while IPB180N10N3 G sacrifices PoE-specific ruggedness and thermal integration for raw current capacity - making PSMN040-100MSEX the optimal balance of SOA, thermal performance, and layout simplicity in modern 60–90 W PSE designs.

Availability

PSMN040-100MSEX is available at Aetrix Electronics and suitable for IEEE 802.3bt power sourcing equipment, proprietary 90 W PoE injectors, and industrial Ethernet PSE modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for PSMN040-100MSEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's LFPAK Power MOSFET product line - designed specifically for high-efficiency, high-power-density applications in PoE, server VRMs, and industrial motor drives where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for PSMN040-100MSEX at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is 21 A (per Table 5, Limiting Values). This value is determined by thermal derating of the 30 A rating at 25 °C, based on the device's 1.44 K/W junction-to-mounting-base thermal resistance and safe operating area constraints - not package current limits alone.

Does PSMN040-100MSEX support gate drive with 5 V logic-level controllers?

No - it is a standard-level MOSFET with VGS(th) = 2.3–4 V (typ), requiring ≥10 V gate drive for full enhancement and specified RDS(on). At 5 V, RDS(on) exceeds 100 mΩ, causing excessive conduction loss; a dedicated 10 V gate driver or level shifter is mandatory for PoE PSE operation.

How is the mounting base (mb) electrically connected, and what PCB layout guidance applies?

The mounting base is internally connected to the drain terminal. For optimal thermal and electrical performance, it must be soldered to a large, multi-layer copper pour tied to the main DC bus (drain net), with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground/power planes - per Nexperia's LFPAK33 layout guidelines in AN11570.

Is PSMN040-100MSEX qualified for automotive applications?

No - this part is not automotive-qualified. It is specified for industrial and commercial PoE applications only. Nexperia explicitly states in Section 12.3 that non-automotive qualified products are neither tested nor warranted for automotive use, and inclusion in such systems voids all warranties and incurs full customer liability.

PSMN040-100MSEX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-1210, 8-LFPAK33 (5-Lead)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
36.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1470 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
91W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK33

PSMN040-100MSEX FAQ

1.How can I place an order for PSMN040-100MSEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN040-100MSEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN040-100MSEX reliable?

The price and inventory of PSMN040-100MSEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN040-100MSEX is usually 5 days.

3.What payment methods are accepted for PSMN040-100MSEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN040-100MSEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN040-100MSEX?

PSMN040-100MSEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN040-100MSEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN040-100MSEX?

For technical support, including PSMN040-100MSEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN040-100MSEX requirements.

6.How does Aetrix verify that PSMN040-100MSEX is sourced from the original manufacturer or authorized distributors?

All PSMN040-100MSEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN040-100MSEX meets industry standards.

7.What is the process for return or replacement of PSMN040-100MSEX?

All PSMN040-100MSEX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN040-100MSEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN040-100MSEX part is unused and in its original packaging.

Return procedure for PSMN040-100MSEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN040-100MSEX Tags

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