Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PSMN040-200W,127

Name: PSMN040-200W,127
Brand: NXP Semiconductors
SKU: PSMN040-200W,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN040-200W,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: PSMN040-200W,127.pdf

Description:: MOSFET N-CH 200V 50A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,777

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN040-200W from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ power MOSFET designed for high-efficiency switching in high-voltage d.c.-to-d.c. converters and switched-mode power supplies. It features a 200 V drain-source breakdown voltage, 50 A continuous drain current at 25 °C mounting base temperature, and a maximum on-state resistance of 40 mΩ at V_GS = 10 V and I_D = 25 A.

For engineers reviewing the PSMN040-200W datasheet, PSMN040-200W pinout, PSMN040-200W application, or PSMN040-200W equivalent, key selection criteria include thermal resistance to mounting base (0.5 K/W), avalanche energy rating (661 mJ), gate charge profile (183 nC total), and TO-247 package suitability for forced-air or heatsink-cooled industrial power stages.

Technical Context

The PSMN040-200W employs TrenchMOS™ technology to minimize R_DS(on) while maintaining robust avalanche capability. Its gate threshold voltage ranges from 2.0 V to 4.0 V at 25 °C and drops to 1.0 V at 175 °C, enabling stable turn-on across wide junction temperature excursions.

It delivers fast switching with 43 ns turn-on delay, 94 ns rise time, 230 ns turn-off delay, and 92 ns fall time under specified resistive-load conditions. Internal drain and source inductances are tightly controlled at 3.5–4.5 nH and 7.5 nH respectively, supporting predictable EMI behavior in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche; supports 170 V DC bus designs with 15% margin.
I_D (continuous)	50 A at T_mb = 25 °C - Enables high-current primary-side switching without parallel devices in 1–3 kW SMPS.
R_DS(on)	≤ 40 mΩ at V_GS = 10 V, I_D = 25 A - Limits conduction loss to ≤ 25 W at 50 A, critical for thermal management.
E_AS	661 mJ - Specifies single-pulse unclamped inductive avalanche energy handling at 50 A, 100 µs, 25 °C.
R_{th j-mb}	0.5 K/W - Junction-to-mounting-base thermal resistance enables direct heatsink mounting with minimal thermal interface resistance.
Q_g(tot)	183 nC - Total gate charge determines driver strength requirement; ~1.8 A peak needed for 100 ns switching at 10 V swing.
V_GS(th)	2.0–4.0 V at 25 °C - Ensures reliable enhancement-mode operation with standard 5 V or 10 V gate drivers.

Pinout & Package

SOT429 (TO-247) package with isolated plastic body, heatsink-mountable tab, and three leads. Pin 2 (drain) is internally connected to the metal mounting base for low-inductance, high-current path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires <100 nA leakage current drive; sensitive to ESD per IEC 61000-4-2 Level 4.
2	Drain	Main high-side power terminal; electrically bonded to mounting base; carries full load current and avalanche energy.
3	Source	Power return and reference node; internal source bond wires contribute 7.5 nH inductance affecting switching ringing.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables 40 mΩ R_DS(on) at 200 V rating-lower than planar MOSFETs of comparable die size and cost.
Low R_{th j-mb}	0.5 K/W thermal resistance allows >250 W dissipation with 125 K temperature rise to heatsink-no derating required below 100 °C T_mb.
High avalanche ruggedness	661 mJ non-repetitive avalanche energy supports reliable operation during output short-circuit or transformer saturation events.
Optimized gate charge profile	73 nC Miller charge (Q_gd) relative to 40 nC Q_gs provides controllable dv/dt and reduced shoot-through risk in half-bridge configurations.

Applications

Server PSU Primary Switch	Industrial Motor Drive Inverter
Use Scenario: High-efficiency 3.3 kW front-end AC/DC converter operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch in primary-side power stage; handles 50 A peak current and 160 V DC bus voltage. Use Value: 40 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 60 mΩ 200 V MOSFETs, improving full-load efficiency from 92.1% to 93.4%.	Use Scenario: 7.5 kW three-phase inverter driving induction motor with field-oriented control and 16 kHz PWM. IC Role / Device Role / Timing Role: Upper-leg switching device in 600 V DC link inverter leg; operates with 100 ns dead-time and 150 °C junction temperature. Use Value: 0.5 K/W R_{th j-mb} enables direct heatsink mounting without thermal pads, reducing thermal stack-up resistance by 0.3 K/W versus TO-220 alternatives.
Solar Microinverter DC/AC Stage	EV Onboard Charger Boost Converter
Use Scenario: 300–450 V DC input boost stage feeding H-bridge inverter in single-phase 350 W microinverter. IC Role / Device Role / Timing Role: High-side boost switch operating at 120 kHz with 200 V blocking requirement and 25 A RMS current. Use Value: 661 mJ E_AS withstands repeated inductive turn-off transients from PV string impedance mismatch without failure.	Use Scenario: 400 V nominal boost converter in 6.6 kW bidirectional OBC, switching at 80 kHz with synchronous rectification. IC Role / Device Role / Timing Role: Main switching FET in interleaved two-phase boost; conducts 32 A average current with 100 A pulsed peaks. Use Value: 200 A I_DM pulsed rating supports 3× overcurrent surge during battery pre-charge without SOA violation.

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 3.3 kW front-end AC/DC converter operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in primary-side power stage; handles 50 A peak current and 160 V DC bus voltage.

Use Value: 40 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 60 mΩ 200 V MOSFETs, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: 7.5 kW three-phase inverter driving induction motor with field-oriented control and 16 kHz PWM.

IC Role / Device Role / Timing Role: Upper-leg switching device in 600 V DC link inverter leg; operates with 100 ns dead-time and 150 °C junction temperature.

Use Value: 0.5 K/W R_{th j-mb} enables direct heatsink mounting without thermal pads, reducing thermal stack-up resistance by 0.3 K/W versus TO-220 alternatives.

Solar Microinverter DC/AC Stage

EV Onboard Charger Boost Converter

Use Scenario: 300–450 V DC input boost stage feeding H-bridge inverter in single-phase 350 W microinverter.

IC Role / Device Role / Timing Role: High-side boost switch operating at 120 kHz with 200 V blocking requirement and 25 A RMS current.

Use Value: 661 mJ E_AS withstands repeated inductive turn-off transients from PV string impedance mismatch without failure.

Use Scenario: 400 V nominal boost converter in 6.6 kW bidirectional OBC, switching at 80 kHz with synchronous rectification.

IC Role / Device Role / Timing Role: Main switching FET in interleaved two-phase boost; conducts 32 A average current with 100 A pulsed peaks.

Use Value: 200 A I_DM pulsed rating supports 3× overcurrent surge during battery pre-charge without SOA violation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP50NF20	200 V, 50 A, R_DS(on) = 40 mΩ, R_{th j-mb} = 0.6 K/W, E_AS = 520 mJ	Lower avalanche energy and higher thermal resistance limit reliability in unclamped inductive loads.	Acceptable where avalanche stress is mitigated by snubbers or clamping circuits.
IRFP460	500 V, 20 A, R_DS(on) = 270 mΩ, R_{th j-mb} = 0.83 K/W, no published E_AS	Higher voltage rating but lower current and significantly higher on-resistance; not a drop-in replacement.	Only suitable when system requires >300 V blocking and can tolerate 6.7× higher conduction loss.

Compared with STP50NF20 and IRFP460, the PSMN040-200W offers superior thermal performance (0.5 K/W vs. ≥0.6 K/W), higher avalanche robustness (661 mJ vs. ≤520 mJ), and identical current/voltage ratings-making it the preferred choice for thermally constrained, high-reliability 200 V SMPS designs.

Availability

PSMN040-200W is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for PSMN040-200W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips' semiconductor division, specializing in secure connectivity solutions and power management ICs.

The PSMN040-200W belongs to NXP's TrenchMOS™ discrete power transistor family, engineered specifically for high-efficiency, high-reliability switching in industrial and telecom power conversion systems.

FAQ

What is the maximum continuous drain current rating for the PSMN040-200W?

The PSMN040-200W has a continuous drain current (I_D) rating of 50 A at T_mb = 25 °C and 36 A at T_mb = 100 °C. This rating assumes proper heatsinking via the mounting base and accounts for thermal derating per Figure 2 in the datasheet. The PSMN040-200W must be mounted to a heatsink capable of maintaining the base temperature within these limits to sustain rated current.

Does the PSMN040-200W have avalanche capability, and how is it specified?

Yes, the PSMN040-200W is rated for non-repetitive avalanche energy (E_AS) of 661 mJ under defined test conditions: unclamped inductive load, I_AS = 50 A, t_p = 100 µs, V_DD ≤ 25 V, and T_j = 25 °C. This specification confirms ruggedness against transient overvoltage events. The PSMN040-200W datasheet includes Fig.15 showing I_AS vs. t_AV for design validation.

What is the gate threshold voltage range for the PSMN040-200W, and how does it vary with temperature?

The PSMN040-200W gate threshold voltage (V_GS(th)) is specified from 2.0 V to 4.0 V at 25 °C, and decreases to 1.0 V minimum at 175 °C. This negative temperature coefficient ensures stable turn-on behavior across wide operating temperatures. The PSMN040-200W remains fully enhanced above 4.0 V gate drive even at elevated junction temperatures.

Can the PSMN040-200W be used in parallel configurations, and what design considerations apply?

The PSMN040-200W supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. However, layout symmetry, matched gate drive impedance, and individual source inductance balancing (7.5 nH typical) are essential. The PSMN040-200W datasheet recommends using Kelvin source connections and low-inductance PCB routing to avoid oscillation and unequal current distribution.

What is the thermal resistance from junction to mounting base for the PSMN040-200W, and why is it critical?

The PSMN040-200W has a maximum thermal resistance R_{th j-mb} of 0.5 K/W, measured from junction to the metal mounting base (pin 2). This low value is critical because it directly determines the maximum power dissipation achievable with a given heatsink temperature rise. For example, a 50 K rise allows 100 W continuous dissipation-enabling compact thermal design in space-constrained PSMN040-200W applications.

PSMN040-200W,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 183 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

PSMN040-200W,127 FAQ

1.How can I place an order for PSMN040-200W,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN040-200W,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN040-200W,127 reliable?

The price and inventory of PSMN040-200W,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN040-200W,127 is usually 5 days.

3.What payment methods are accepted for PSMN040-200W,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN040-200W,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN040-200W,127?

PSMN040-200W,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN040-200W,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN040-200W,127?

For technical support, including PSMN040-200W,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN040-200W,127 requirements.

6.How does Aetrix verify that PSMN040-200W,127 is sourced from the original manufacturer or authorized distributors?

All PSMN040-200W,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN040-200W,127 meets industry standards.

7.What is the process for return or replacement of PSMN040-200W,127?

All PSMN040-200W,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN040-200W,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN040-200W,127 part is unused and in its original packaging.

Return procedure for PSMN040-200W,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…