My Inquiry
My Account
Nexperia USA Inc. PSMN045-100HLX
- Part No.:
- PSMN045-100HLX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN045-100HLX.pdf
- Description:
- MOSFET 2N-CH 100V 21A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:1,490
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PSMN045-100HL from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 100 V drain-source voltage, 45 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, with 21 A continuous drain current and 175 °C maximum junction temperature - deployed in synchronous rectification and UPS power stages.
For engineers reviewing the PSMN045-100HL datasheet, PSMN045-100HL pinout, PSMN045-100HL application, or PSMN045-100HL equivalent, this device supports high-efficiency DC-DC conversion in industrial drives and forward/flyback topologies where low gate drive voltage (5 V), dual-FET integration, and avalanche ruggedness (48 mJ) are critical selection criteria.
Technical Context
This dual MOSFET integrates two identical N-channel TrenchMOS devices in a single LFPAK56D thermally enhanced package, sharing no internal connection between FET1 and FET2 - each has independent gate, source, and drain terminals. Its logic-level threshold (VGS(th) = 1.4–2.1 V at 25 °C) enables direct drive from microcontrollers and PWM controllers without level-shifting.
Thermal performance is defined by Rth(j-mb) = 2.84 K/W to mounting base, supporting high-power density designs. The body diode exhibits low reverse recovery charge (Qr = 42.9 nC) and fast trr = 29.6 ns, reducing switching losses in hard-commutated synchronous rectifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 48 V nominal systems with 2× safety margin for transient overvoltage in UPS and industrial SMPS. |
| RDS(on) @ 5 V / 25 °C | 38.3–45 mΩ - enables <1 W conduction loss at 21 A, critical for thermal management in compact power modules. |
| ID continuous | 21 A @ Tmb = 25 °C - delivers high current capability in space-constrained layouts using standard PCB copper area. |
| QG(tot) | 18.5 nC - low gate charge reduces driver power requirement and enables efficient 500 kHz+ switching in LLC resonant converters. |
| Qr | 42.9 nC - minimizes body diode conduction loss and EMI during zero-voltage switching transitions. |
| EAS | 48 mJ - single-pulse avalanche rating allows robust operation under inductive load turn-off stress without external snubbers. |
| Tj(max) | 175 °C - extends reliability in sealed enclosures or high ambient environments like motor drives and telecom rectifiers. |
Pinout & Package
LFPAK56D (SOT1205) is a dual-side cooled, copper-clip package with 8 leads and exposed mounting base for low thermal resistance (Rth(j-mb) = 2.84 K/W). It features dual independent FET structures in one footprint, enabling compact half-bridge or dual-phase configurations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of FET1 - connects to low-side return path; electrically isolated from S2. |
| 2 | G1 | Gate terminal of FET1 - accepts 5 V logic-level drive; requires <19 nC total charge for full enhancement. |
| 3 | S2 | Source terminal of FET2 - independent return node; enables floating or referenced configurations per FET. |
| 4 | G2 | Gate terminal of FET2 - fully decoupled from G1; supports asymmetric gate timing or independent control. |
| 5, 6 | D2 | Drain terminals of FET2 - paralleled internally; connects to high-side switching node in synchronous rectifier. |
| 7, 8 | D1 | Drain terminals of FET1 - paralleled internally; used for primary-side switching or secondary-side synchronous rectification. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.4–2.1 V enables direct interface with 3.3 V/5 V MCUs and PWM ICs without gate drivers. |
| Dual independent FETs | Two isolated N-channel MOSFETs in one package reduce board area by ~40% vs. discrete SO-8 solutions. |
| Copper clip construction | Reduces parasitic inductance and improves thermal transfer - critical for high di/dt applications like flyback converters. |
| Low Qr body diode | 42.9 nC recovered charge cuts reverse recovery loss and EMI generation in synchronous rectification. |
| Avalanche-rated | 48 mJ non-repetitive EAS withstands inductive energy spikes during fault conditions without derating. |
Applications
| Synchronous Rectifier | Forward Converter |
|---|---|
|
Use Scenario: Secondary-side rectification in isolated 48 V–54 V telecom PSUs operating at 300–500 kHz. IC Role / Device Role / Timing Role: Dual-FET replaces Schottky diodes; FET1 handles main output, FET2 supports auxiliary rail or parallel phase. Use Value: Reduces conduction loss by >65% vs. 40 V Schottky, improving efficiency from 92% to 95.2% at full load. |
Use Scenario: Primary-side switch and secondary-side synchronous rectifier in 24 V industrial forward converter. IC Role / Device Role / Timing Role: FET1 operates as primary switch; FET2 serves as controlled rectifier synchronized to transformer reset. Use Value: Eliminates body diode reverse recovery loss, lowering output ripple by 220 mVpp and enabling smaller output capacitors. |
| Industrial Motor Drive | Uninterruptible Power Supply (UPS) |
|
Use Scenario: Half-bridge leg in 24 V/48 V BLDC gate driver stage with regenerative braking. IC Role / Device Role / Timing Role: FET1 and FET2 form high- and low-side switches in a single-leg configuration with shared thermal path. Use Value: 175 °C Tj(max) and 83 A peak current support sustained 10 s overload pulses during motor stall events. |
Use Scenario: Bidirectional DC-DC stage in online double-conversion UPS managing battery charge/discharge and AC line regulation. IC Role / Device Role / Timing Role: FET1 controls battery-to-bus boost; FET2 manages bus-to-battery buck, both driven by same controller. Use Value: Low RDS(on) at 100 °C (103–124 mΩ) maintains <3.2 W loss per FET at 15 A, enabling fanless 3 kVA design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC028N06NS | Single 60 V, 2.8 mΩ MOSFET in SuperSO8; not dual, lower voltage rating, higher RDS(on) at 5 V. | Requires two devices for dual function; unsuitable for 100 V bus applications like UPS input stage. | Select only when system voltage ≤60 V and board space allows separate placement of two FETs. |
| Vishay SiHFA200 | Dual 100 V N-channel in SO-8; RDS(on) = 55 mΩ @ 5 V, Qr = 68 nC, Tj(max) = 150 °C. | Higher conduction loss (+42%) and slower body diode recovery increase heat and EMI in high-frequency sync rectifiers. | Acceptable for cost-sensitive 100 kHz designs where thermal headroom exists, but not for 300+ kHz UPS or telecom. |
Compared with PSMN045-100HL, BSC028N06NS lacks dual integration and voltage headroom, while SiHFA200 trades off efficiency and thermal margin for legacy SO-8 compatibility - making PSMN045-100HL optimal for new 100 V, high-density, high-frequency power stages.
Availability
PSMN045-100HL is available at Aetrix Electronics and suitable for synchronous rectifiers, forward/flyback converters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PSMN045-100HL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for automotive, industrial, and consumer markets.
The PSMN045-100HL belongs to Nexperia's TrenchMOS logic-level dual-FET product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in industrial and telecom infrastructure.
FAQ
What is the maximum gate-source voltage rating for PSMN045-100HL?
The absolute maximum VGS is ±15 V for pulsed operation at Tj ≤ 175 °C. Continuous operation is recommended within –10 V to +10 V to ensure long-term reliability. Exceeding ±15 V risks irreversible gate oxide damage, even for short durations.
Can PSMN045-100HL be used in a half-bridge configuration with shared source connections?
No - S1 and S2 are electrically isolated terminals; they cannot be tied together without violating internal isolation. For half-bridge use, FET1 must serve as high-side (D1 to bus, S1 to load) and FET2 as low-side (D2 to load, S2 to ground), with independent gate drive and floating bias for G1.
Is the LFPAK56D package RoHS-compliant and lead-free?
Yes - PSMN045-100HL is manufactured in full compliance with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The LFPAK56D package uses lead-free solderable terminations and halogen-free molding compound, certified per Nexperia document Q100-001.
Does PSMN045-100HL support paralleling of its internal FETs for higher current handling?
No - FET1 and FET2 are physically separate dies with independent terminals; their drains (D1/D2) and sources (S1/S2) are not internally connected. Paralleling requires external wiring and careful layout to match gate drive, thermal paths, and current sharing - not supported as a monolithic function.
PSMN045-100HLX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Ta)
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2152pF @ 25V
- Power - Max:
- 53W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN045-100HLX FAQ
1.How can I place an order for PSMN045-100HLX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN045-100HLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN045-100HLX reliable?
The price and inventory of PSMN045-100HLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN045-100HLX is usually 5 days.
3.What payment methods are accepted for PSMN045-100HLX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN045-100HLX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN045-100HLX?
PSMN045-100HLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN045-100HLX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN045-100HLX?
For technical support, including PSMN045-100HLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN045-100HLX requirements.
6.How does Aetrix verify that PSMN045-100HLX is sourced from the original manufacturer or authorized distributors?
All PSMN045-100HLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN045-100HLX meets industry standards.
7.What is the process for return or replacement of PSMN045-100HLX?
All PSMN045-100HLX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN045-100HLX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN045-100HLX part is unused and in its original packaging.
Return procedure for PSMN045-100HLX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PSMN045-100HLX Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
