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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN047-100NSEX

Name: PSMN047-100NSEX
Brand: Nexperia USA Inc.
SKU: PSMN047-100NSEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN047-100NSEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: PSMN047-100NSEX.pdf

Description:: PSMN047-100NSE/SOT1220-2/DFN20

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN047-100NSE from Nexperia is an N-channel 100 V, 53 mΩ standard-level ASFET in DFN2020M-6 (SOT1220-2) package, engineered for linear-mode operation with enhanced safe operating area (SOA). It delivers 18.4 A continuous drain current at T_mb = 25 °C, supports unclamped avalanche energy up to 13.8 mJ, and features ultra-low I_DSS leakage (≤1 µA at 100 V, 25 °C), enabling robust eFuse and high-power PoE PSE designs.

For engineers reviewing the PSMN047-100NSE datasheet, PSMN047-100NSE pinout, PSMN047-100NSE application, or PSMN047-100NSE equivalent, key selection criteria include SOA performance in linear mode, thermal resistance (R_th(j-mb) = 3.2 K/W), gate charge (Q_G(tot) = 9 nC typ), and DFN2020 footprint compatibility for space-constrained PoE and inrush management circuits.

Technical Context

This ASFET employs a trench-gate MOSFET structure optimized for stable linear-mode conduction under high V_DS and moderate I_D, critical for PoE soft-start and eFuse current limiting. Its SOA curve extends to 100 V / 10 A (DC) and sustains 100 µs pulses up to 74 A, validated per IEC 60134 absolute maximum ratings.

The device integrates a low-leakage body diode (V_SD = 0.85 V at 5 A, 25 °C; Q_r = 22.3 nC) and exhibits tight V_GS(th) distribution (2.8 V typ, 25 °C; ΔV_GS(th)/ΔT = −5.2 mV/K), ensuring predictable turn-on behavior across −55 °C to 175 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for IEEE 802.3bt Type 4 (90 W) PoE PSE compliance.
R_DS(on)	53.4 mΩ @ V_GS = 10 V, I_D = 5 A, T_j = 25 °C - Enables <1.4 W conduction loss at 5.3 A, reducing thermal load in compact PD interfaces.
I_D	18.4 A continuous @ T_mb = 25 °C - Supports high-current inrush limiting without external heatsinking on standard 25.4 mm² copper pads.
E_AS	13.8 mJ unclamped avalanche energy - Provides fault tolerance during short-circuit events in relay-replacement applications without snubber networks.
Q_G(tot)	9 nC typ - Enables fast switching with low gate drive power, critical for high-frequency eFuse response (<10 µs turn-off delay).
R_th(j-mb)	3.2 K/W - Allows 42 W total power dissipation with ≤135 °C junction rise above 25 °C mounting base, supporting high-density board layouts.
I_DSS	0.01 µA @ V_DS = 100 V, T_j = 25 °C - Ensures minimal standby power loss in always-on PoE port controllers.

Pinout & Package

DFN2020M-6 (SOT1220-2) package: 2 mm × 2 mm × 0.65 mm body, thermally enhanced ultra-thin outline with exposed drain paddle and no leads. Optimized for PCB thermal transfer via bottom-side copper pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to internal die drain metallization and exposed thermal pad - provides low-inductance, high-current path and primary heat conduction route to PCB.
3	Gate (G)	Single gate input terminal - requires <5 Ω external series resistance to damp ringing during fast switching in linear-mode eFuse control.
4, 8	Source (S)	Two source terminals tied to source metallization - forms Kelvin-sense path for accurate current monitoring in precision load-switch applications.

Key Features

Feature	Design Value
Enhanced SOA	DC SOA extends to 100 V / 10 A at T_mb = 25 °C - enables stable operation in PoE PSE soft-start without derating or forced air cooling.
Low R_DS(on) drift	R_DS(on) increases only 2.3× from 25 °C to 175 °C (93 mΩ max) - maintains predictable current limiting over full industrial temperature range.
Ultra-low leakage	I_DSS ≤ 1 µA @ 100 V, 125 °C - eliminates parasitic discharge paths in battery-backed CCTV and 5G picocell backup systems.
High avalanche ruggedness	IAS = 10.6 A, EAS = 13.8 mJ - withstands repetitive inductive kickback in relay-replacement motor control and solenoid drivers.
Compact footprint	DFN2020M-6 occupies 60% less area than LFPAK33 - enables dual-port PoE PSE designs with ≥20% higher port density on 4-layer boards.

Applications

High-Power PoE PSE

eFuse Load Switch

Use Scenario: Power sourcing equipment delivering up to 90 W per port per IEEE 802.3bt, requiring controlled inrush and fault current limiting.

IC Role / Device Role / Timing Role: Main pass transistor in linear-mode hot-swap controller, regulating current during cable detection and power-up sequencing.

Use Value: Enhanced SOA allows sustained 60–100 V operation at 5–10 A without thermal runaway, eliminating need for active cooling in wall-mounted PSE switches.

Use Scenario: Solid-state replacement for mechanical fuses in industrial IoT gateways and telecom edge routers.

IC Role / Device Role / Timing Role: Current-sensing, voltage-controlled switch that trips within 10 µs upon overcurrent detection.

Use Value: Low Q_G(tot) (9 nC) and fast t_f (6.1 ns) enable sub-100 ns fault isolation, protecting downstream 12 V/48 V DC bus from short-circuit damage.

Relay Replacement

Battery Management

Use Scenario: Solid-state alternative to electromechanical relays in HVAC controllers and smart lighting panels.

IC Role / Device Role / Timing Role: High-voltage, high-current bidirectional switch controlling AC/DC loads up to 100 V.

Use Value: Avalanche-rated design (13.8 mJ) absorbs inductive energy from solenoid coils and transformer primaries, removing need for flyback diodes.

Use Scenario: Primary protection switch in 48 V Li-ion battery packs for 5G picocells and portable medical devices.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection FET placed between battery and system load.

Use Value: Ultra-low I_DSS (0.01 µA) prevents self-discharge during storage, extending shelf life beyond 12 months without maintenance charging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-SOA N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N10N5	100 V, 4.0 mΩ @ 10 V, TO-220 package - lower R_DS(on) but larger footprint and higher Q_G (42 nC).	Requires heatsink and PCB area >300 mm² - unsuitable for space-constrained PoE modules.	Select only when thermal budget permits TO-220 mounting and lowest conduction loss is prioritized over size.
Vishay SiR626DP	100 V, 5.2 mΩ @ 10 V, PowerPAK SO-8 - 3× higher R_DS(on) than PSMN047-100NSE, no SOA characterization data published.	Limited linear-mode validation - not recommended for eFuse or PoE soft-start where SOA margin is critical.	Acceptable only for switching-only applications with <5 A RMS current and ambient <60 °C.

Compared with IPP040N10N5 and SiR626DP, PSMN047-100NSE uniquely balances ultra-compact DFN2020 packaging, verified SOA up to 100 V/10 A DC, and sub-10 nC gate charge-making it the only option qualified for high-density, thermally constrained PoE PSE and solid-state relay designs requiring guaranteed linear-mode reliability.

Availability

PSMN047-100NSE is available at Aetrix Electronics and suitable for high-power PoE infrastructure, eFuse-based load management, and relay-replacement industrial controls requiring stable component supply and long-term lifecycle support.

Supply support for PSMN047-100NSE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

The PSMN047-100NSE belongs to Nexperia's ASFET (Advanced Standard Field-Effect Transistor) product line, designed specifically for linear-mode power control in next-generation PoE, eFuse, and solid-state switching applications demanding SOA assurance and thermal efficiency.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C, the PSMN047-100NSE supports 13 A continuous drain current (ID), as confirmed by Fig. 2 in the datasheet. This rating assumes proper PCB copper area (25.4 mm² square, 70 μm thick) and accounts for R_DS(on) increase and thermal derating-no external heatsink required for typical PoE PSE thermal profiles.

Does this MOSFET require a gate resistor for linear-mode operation?

Yes-a 4.7 Ω to 10 Ω gate resistor is recommended to limit dV/dt and prevent oscillation during linear-mode transitions. The device's low gate resistance (RG = 1 Ω typ) and 9 nC total gate charge make it susceptible to ringing without damping, especially in high-dV/dt PoE inrush scenarios.

Can PSMN047-100NSE be used in synchronous rectification?

No-it is not optimized for synchronous rectification. Its body diode reverse recovery time (t_rr = 28.5 ns) and Q_r (22.3 nC) are higher than dedicated SR FETs, and its SOA-focused design prioritizes linear stability over fast switching efficiency in buck/boost topologies.

Is the DFN2020M-6 package lead-free and RoHS compliant?

Yes-the PSMN047-100NSE uses a lead-free, halogen-free, and RoHS-compliant DFN2020M-6 (SOT1220-2) package. Reflow soldering follows JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), with peak temperature up to 260 °C and stencil thickness recommendation of 0.1 mm.

PSMN047-100NSEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 18.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 53.4mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 13.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 815 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020M-6

PSMN047-100NSEX FAQ

1.How can I place an order for PSMN047-100NSEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN047-100NSEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN047-100NSEX reliable?

The price and inventory of PSMN047-100NSEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN047-100NSEX is usually 5 days.

3.What payment methods are accepted for PSMN047-100NSEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN047-100NSEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN047-100NSEX?

PSMN047-100NSEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN047-100NSEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN047-100NSEX?

For technical support, including PSMN047-100NSEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN047-100NSEX requirements.

6.How does Aetrix verify that PSMN047-100NSEX is sourced from the original manufacturer or authorized distributors?

All PSMN047-100NSEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN047-100NSEX meets industry standards.

7.What is the process for return or replacement of PSMN047-100NSEX?

All PSMN047-100NSEX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN047-100NSEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN047-100NSEX part is unused and in its original packaging.

Return procedure for PSMN047-100NSEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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