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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN050-80BS,118

Name: PSMN050-80BS,118
Brand: Nexperia USA Inc.
SKU: PSMN050-80BS,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN050-80BS,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN050-80BS,118.pdf

Description:: MOSFET N-CH 80V 22A D2PAK

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Product details

Overview

PSMN050-80BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 80 V V_DS, 46 mΩ R_DS(on) at 10 A/25 °C, and 175 °C junction temperature. It serves as a high-efficiency power switch in DC-DC converters, motor control, and server power supplies where low conduction loss and compatibility with standard 10 V gate drive are required.

For engineers reviewing the PSMN050-80BS,118 datasheet, PSMN050-80BS,118 pinout, PSMN050-80BS,118 application, or PSMN050-80BS,118 equivalent, key selection criteria include its 22 A continuous drain current at T_mb = 25 °C, 2.2 K/W junction-to-mounting-base thermal resistance, unclamped avalanche energy rating of 18 mJ, and D2PAK package suitability for high-power surface-mount thermal management.

Technical Context

This MOSFET employs planar silicon technology optimized for standard-level gate drive (V_GS = 10 V), delivering stable R_DS(on) across -55 °C to 175 °C operating range. Its gate threshold voltage (2–4 V typ.) ensures reliable turn-on with common logic-level controllers while maintaining robust noise immunity.

The device integrates an intrinsic body diode with 0.86–1.2 V forward voltage at 15 A and 32 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Its 11 nC total gate charge and 2.3 nC gate-drain charge enable fast switching with moderate gate driver strength.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V industrial bus and 60 V automotive auxiliary systems.
R_DS(on)	37–46 mΩ @ 10 A, 25 °C - Low conduction loss enabling <1 W dissipation at 15 A continuous operation with adequate heatsinking.
I_D	22 A @ T_mb = 25 °C - Continuous current rating defined at mounting base temperature, not ambient, reflecting real PCB thermal design conditions.
P_tot	56 W @ T_mb = 25 °C - Total power dissipation limit tied directly to heatsink interface temperature, not case or ambient.
R_th(j-mb)	2.2–2.7 K/W - Junction-to-mounting-base thermal resistance enables ~25 °C temperature rise per 10 W when mounted on copper area ≥10 cm².
Q_G(tot)	9–11 nC - Total gate charge determines gate driver current requirement (~1.1 A peak for 10 ns rise time with 10 Ω external resistor).
E_AS	18 mJ (unclamped) - Avalanche energy rating supports single-pulse inductive turn-off without failure in motor drive or relay snubbing.

Pinout & Package

D2PAK (SOT404) plastic single-ended surface-mounted package with isolated mounting base connected internally to drain; requires thermal pad soldering to PCB copper pour for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts standard 10 V logic-level drive; internal gate resistance 2 Ω limits ringing and simplifies layout.
2	Drain (D)	Main high-side power terminal; electrically connected to mounting base; must be isolated from other copper layers except dedicated thermal pad.
3	Source (S)	Power return path and reference for gate drive; low-inductance connection critical for switching stability.

Key Features

Feature	Design Value
Standard-level gate drive compatibility	Operates fully enhanced at V_GS = 10 V, eliminating need for gate boosters in 12–15 V supply systems.
High-temperature qualification	Rated for continuous operation up to T_j = 175 °C, supporting sealed or high-ambient industrial environments.
Low R_DS(on) × Q_G figure of merit	~500 mΩ·nC - Balances conduction and switching losses for medium-frequency (<500 kHz) hard-switched SMPS.
Robust body diode	32 ns t_rr, 28 nC Q_r - Enables use in non-synchronous flyback and buck converters without external Schottky replacement.
Avalanche-rated structure	18 mJ E_AS - Withstands single-pulse inductive energy without derating, reducing need for external clamping in motor gate drivers.

Applications

DC-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated LLC resonant converter.

IC Role / Device Role / Timing Role: High-side power switch handling 20 A peak currents at 300 kHz switching frequency.

Use Value: 46 mΩ R_DS(on) minimizes conduction loss under full load; 11 nC Q_G enables efficient gate drive with integrated half-bridge controller.

Use Scenario: 12 V VRM high-side FET in dual-phase CPU core power delivery.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating in phase with PWM controller at 500 kHz.

Use Value: 2.2 K/W R_th(j-mb) allows direct mounting to 4-layer PCB thermal plane, sustaining 18 A continuous without external heatsink.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and braking via PWM.

Use Value: 175 °C T_j rating supports enclosed enclosures; 18 mJ avalanche energy absorbs inductive kickback during abrupt stop commands.

Use Scenario: Hot-swap power switch for 48 V backplane distribution in telecom shelf.

IC Role / Device Role / Timing Role: Inrush-limited main power path switch with controlled turn-on via gate resistor network.

Use Value: Standard-level gate drive simplifies control IC selection; 80 V V_DS provides 20 % margin over nominal 48 V rail with transient tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	100 V V_DS, 44 mΩ R_DS(on), TO-220 package, higher Q_G (71 nC)	Requires larger heatsink and stronger gate driver; unsuitable for surface-mount high-density layouts	Select only if through-hole mounting and higher voltage margin are mandatory; avoid for D2PAK-restricted PCBs
STP80NF55-08	55 V V_DS, 8 mΩ R_DS(on), TO-220FP package, lower voltage rating	Not suitable for 48 V systems with >10 % transients; superior conduction but inadequate blocking capability	Choose only for 24 V or lower bus applications where ultra-low R_DS(on) outweighs voltage limitation

Compared with IRF540NPBF and STP80NF55-08, PSMN050-80BS,118 uniquely balances 80 V rating, D2PAK surface-mount thermal performance, and standard-level gate drive-making it optimal for space-constrained, high-temperature industrial power stages where TO-220 alternatives introduce layout or thermal bottlenecks.

Availability

PSMN050-80BS,118 is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from qualified distributors.

Supply support for PSMN050-80BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic solutions.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial and communications power conversion applications where gate drive simplicity and high-temperature operation are essential.

FAQ

What is the maximum continuous drain current for PSMN050-80BS,118 at 100 °C mounting base temperature?

The datasheet specifies 16 A continuous drain current at T_mb = 100 °C and V_GS = 10 V. This reflects derating due to thermal resistance; actual usable current depends on PCB copper area, airflow, and heatsink interface quality. At T_mb = 25 °C, the rating rises to 22 A.

Is PSMN050-80BS,118 suitable for use with 5 V microcontroller gate drive?

No-it is a standard-level MOSFET requiring V_GS ≥ 10 V for full enhancement. At 5 V, R_DS(on) increases significantly (>200 mΩ), causing excessive conduction loss and thermal stress. A gate driver or level shifter is required for 3.3 V or 5 V logic control.

How is the mounting base (pin 2) electrically connected, and what PCB layout guidance applies?

Pin 2 (drain) and the mounting base are internally connected to the same drain node. The exposed copper pad must be soldered to a large, low-thermal-resistance PCB copper pour tied exclusively to the drain net. No isolation or thermal relief is permitted-this pad is the primary heat path to the board.

Does PSMN050-80BS,118 have avalanche capability, and how is it tested?

Yes-it is rated for 18 mJ non-repetitive drain-source avalanche energy (E_AS) under specified conditions: V_GS = 10 V, T_j(init) = 25 °C, I_D = 22 A, V_sup ≤ 80 V, R_GS = 50 Ω, unclamped inductive test. This validates single-pulse ruggedness, not repetitive operation.

PSMN050-80BS,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 46mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 633 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN050-80BS,118 FAQ

1.How can I place an order for PSMN050-80BS,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN050-80BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN050-80BS,118 reliable?

The price and inventory of PSMN050-80BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN050-80BS,118 is usually 5 days.

3.What payment methods are accepted for PSMN050-80BS,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN050-80BS,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN050-80BS,118?

PSMN050-80BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN050-80BS,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN050-80BS,118?

For technical support, including PSMN050-80BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN050-80BS,118 requirements.

6.How does Aetrix verify that PSMN050-80BS,118 is sourced from the original manufacturer or authorized distributors?

All PSMN050-80BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN050-80BS,118 meets industry standards.

7.What is the process for return or replacement of PSMN050-80BS,118?

All PSMN050-80BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN050-80BS,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN050-80BS,118 part is unused and in its original packaging.

Return procedure for PSMN050-80BS,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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