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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PSMN050-80PS,127

Name: PSMN050-80PS,127
Brand: NXP Semiconductors
SKU: PSMN050-80PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN050-80PS,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN050-80PS,127.pdf

Description:: MOSFET N-CH 80V 22A TO220AB

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Product details

Overview

PSMN050-80PS from NXP Semiconductors is a standard-level N-channel MOSFET in TO-220AB package, rated for 80 V drain-source voltage, 22 A continuous drain current at T_mb = 25 °C, and 46 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It operates up to 175 °C junction temperature and is used in industrial DC-to-DC converters and server power supplies.

For engineers reviewing the PSMN050-80PS datasheet, PSMN050-80PS pinout, PSMN050-80PS application, or PSMN050-80PS equivalent, key selection factors include its 80 V V_DS, 46 mΩ R_DS(on) at 10 V gate drive, TO-220AB thermal resistance of 2.2–2.7 K/W, avalanche energy rating of 18 mJ, and suitability for standard-level gate drive sources without level-shifting circuitry.

Technical Context

This MOSFET employs planar trench-gate technology with optimized charge distribution for low conduction and switching losses. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling robust turn-on under high-temperature conditions.

The device integrates an intrinsic body diode with 0.86–1.2 V forward voltage at 15 A and exhibits 32 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Its 11 nC total gate charge and 2.3 nC gate-drain charge support efficient 100 kHz–500 kHz switching in power conversion stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage; supports 48 V input systems with 20 % margin and withstands transient spikes in industrial power rails.
R_DS(on)	46 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 15 A, critical for thermally constrained server PSU designs.
I_D (continuous)	22 A @ T_mb = 25 °C - Delivers high current capability with heatsink mounting; derates to 16 A at T_mb = 100 °C per Figure 1.
P_tot	56 W @ T_mb = 25 °C - Combined with R_th(j-mb) = 2.2–2.7 K/W, enables ~120 °C junction rise above mounting base under full load.
Q_G(tot)	11 nC @ V_DS = 40 V - Low gate charge reduces driver power demand and switching losses in high-frequency SMPS stages.
E_AS	18 mJ unclamped avalanche - Provides single-pulse ruggedness against inductive turn-off transients in motor control and relay driving.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers without requiring bootstrap or charge-pump circuits.

Pinout & Package

PSMN050-80PS uses the TO-220AB (SOT78) plastic single-ended package with heatsink-mounted mounting base electrically connected to the drain terminal. The package features three leads and one mounting hole, optimized for vertical heatsink attachment and high-power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts standard-level 10 V drive; internal gate resistance is 2 Ω, limiting ringing in high-dV/dt environments.
2 (D)	Drain	Main high-side power terminal; electrically tied to mounting base for direct thermal path to heatsink.
3 (S)	Source	Power return node; referenced for gate drive; forms common node with body diode cathode in low-side switch configurations.
Mounting base (mb)	Drain connection	Integral metal tab bonded to drain; provides primary thermal conduction path and must be insulated from chassis if drain is not ground-referenced.

Key Features

Feature	Design Value
High-temperature operation	Rated for continuous operation up to T_j = 175 °C, enabling use in sealed industrial enclosures and high-ambient server environments.
Standard-level gate drive compatibility	Turns on fully with 10 V gate-source voltage-no level shifter required-reducing BOM count and layout complexity in 12 V or 15 V control rails.
Low R_DS(on) × Q_G figure of merit	46 mΩ × 11 nC = 506 mΩ·nC-balances conduction and switching losses for optimal efficiency in 100–300 kHz power stages.
Avalanche-rated structure	18 mJ non-repetitive E_AS allows safe operation during inductive load interruption without external snubbers in motor gate drivers.
Integrated source-drain diode	Body diode with 32 ns t_rr and 28 nC Q_r supports freewheeling in buck converters and half-bridge configurations without discrete diode addition.

Applications

DC-to-DC Converters	Server Power Supplies
Use Scenario: Primary-side switching in isolated 48 V–12 V intermediate bus converters for telecom and datacom equipment. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in forward or active-clamp forward topology operating at 200–300 kHz. Use Value: 46 mΩ R_DS(on) minimizes conduction loss at 20 A output, while 11 nC Q_G ensures low gate drive loss and clean switching edges.	Use Scenario: Secondary-side synchronous rectification in 12 V VRM modules delivering >100 A to CPU/GPU rails. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter with 500 kHz PWM frequency and 10 ns dead-time control. Use Value: 22 A continuous rating and 88 A pulsed capability handle phase-current peaks; TO-220AB mounting base enables direct heatsink coupling for thermal management.
Motor Control	Load Switching
Use Scenario: Half-bridge leg in 24 V BLDC motor drives for industrial automation and HVAC fans. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by gate driver IC with 10 V output. Use Value: 175 °C junction rating ensures reliability under stall conditions; 18 mJ avalanche energy absorbs inductive kickback during emergency stop.	Use Scenario: Hot-swap and inrush current limiting in industrial PLC I/O modules with 24 V backplane power. IC Role / Device Role / Timing Role: Single N-channel load switch placed between supply rail and downstream circuitry. Use Value: Standard-level gate drive allows direct connection to microcontroller GPIO; 80 V V_DS accommodates 24 V systems with surge protection headroom.

DC-to-DC Converters

Server Power Supplies

Use Scenario: Primary-side switching in isolated 48 V–12 V intermediate bus converters for telecom and datacom equipment.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in forward or active-clamp forward topology operating at 200–300 kHz.

Use Value: 46 mΩ R_DS(on) minimizes conduction loss at 20 A output, while 11 nC Q_G ensures low gate drive loss and clean switching edges.

Use Scenario: Secondary-side synchronous rectification in 12 V VRM modules delivering >100 A to CPU/GPU rails.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter with 500 kHz PWM frequency and 10 ns dead-time control.

Use Value: 22 A continuous rating and 88 A pulsed capability handle phase-current peaks; TO-220AB mounting base enables direct heatsink coupling for thermal management.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24 V BLDC motor drives for industrial automation and HVAC fans.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by gate driver IC with 10 V output.

Use Value: 175 °C junction rating ensures reliability under stall conditions; 18 mJ avalanche energy absorbs inductive kickback during emergency stop.

Use Scenario: Hot-swap and inrush current limiting in industrial PLC I/O modules with 24 V backplane power.

IC Role / Device Role / Timing Role: Single N-channel load switch placed between supply rail and downstream circuitry.

Use Value: Standard-level gate drive allows direct connection to microcontroller GPIO; 80 V V_DS accommodates 24 V systems with surge protection headroom.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	80 V, 55 A, 8 mΩ R_DS(on), TO-220FP package; lower R_DS(on) but higher Q_G (90 nC); no avalanche rating specified.	Better conduction efficiency at high current, but requires stronger gate driver and lacks documented avalanche ruggedness.	Prefer when minimizing I²R loss dominates design and gate drive strength is available; avoid where inductive transients are unclamped.
IRF540NPBF	100 V, 33 A, 44 mΩ R_DS(on), TO-220AB; higher V_DS rating but same R_DS(on) and thermal resistance; 100 V enables wider input range.	Supports 48 V systems with higher surge margin; identical pinout and footprint but slightly higher gate charge (71 nC).	Choose when system-level overvoltage protection requires >80 V rating; verify gate driver can support higher Q_G without excessive loss.

Compared with STP80NF55-08 and IRF540NPBF, PSMN050-80PS offers a balanced trade-off: moderate R_DS(on) and gate charge with verified 18 mJ avalanche capability and 175 °C operation-making it preferable for thermally demanding, transient-prone industrial loads where reliability trumps peak efficiency.

Availability

PSMN050-80PS is available at Aetrix Electronics and suitable for DC-to-DC converters, server power supplies, and motor control applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for PSMN050-80PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions, automotive processors, and high-reliability power semiconductors.

The PSMN050-80PS belongs to NXP's TrenchMOS family of standard-level power MOSFETs, engineered for industrial-grade robustness, high-temperature operation, and compatibility with legacy gate drive architectures.

FAQ

What is the maximum junction temperature rating for PSMN050-80PS?

The PSMN050-80PS is qualified for continuous operation up to a junction temperature of 175 °C, as confirmed in the General Description and Limiting Values sections of the NXP datasheet. This rating enables deployment in high-ambient environments such as enclosed industrial drives and server power supplies where thermal management is constrained.

Does PSMN050-80PS have avalanche capability, and what is its rated energy?

Yes, PSMN050-80PS is rated for non-repetitive drain-source avalanche energy of 18 mJ under specified test conditions (V_GS = 10 V, T_j(init) = 25 °C, I_D = 22 A, V_sup ≤ 80 V, R_GS = 50 Ω, unclamped). This ruggedness supports reliable operation during inductive turn-off events in motor control and relay driving applications.

What is the gate threshold voltage range of PSMN050-80PS across temperature?

The gate-source threshold voltage (V_GS(th)) of PSMN050-80PS ranges from 1 V (min) at T_j = 175 °C to 4.6 V (max) at T_j = -55 °C, with a typical value of 2–4 V at 25 °C. This wide operational window ensures consistent turn-on behavior across industrial temperature extremes without requiring adaptive gate drive.

Can PSMN050-80PS be used with 5 V logic-level gate drivers?

No-PSMN050-80PS is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement. At 5 V, R_DS(on) increases significantly (not specified in datasheet), resulting in excessive conduction loss. It is designed for use with 10–15 V gate drive sources, not 5 V logic outputs.

What is the thermal resistance from junction to mounting base for PSMN050-80PS?

The thermal resistance from junction to mounting base (R_th(j-mb)) for PSMN050-80PS is 2.2–2.7 K/W, as specified in Table 5 of the NXP datasheet. This low value reflects the direct thermal path through the TO-220AB mounting base, enabling effective heat transfer to an external heatsink when properly mounted with thermal interface material.

PSMN050-80PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 51mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 633 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN050-80PS,127 FAQ

1.How can I place an order for PSMN050-80PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN050-80PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN050-80PS,127 reliable?

The price and inventory of PSMN050-80PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN050-80PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN050-80PS,127?

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4.How is shipping managed for PSMN050-80PS,127?

PSMN050-80PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN050-80PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN050-80PS,127?

For technical support, including PSMN050-80PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN050-80PS,127 requirements.

6.How does Aetrix verify that PSMN050-80PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN050-80PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN050-80PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN050-80PS,127?

All PSMN050-80PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN050-80PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN050-80PS,127 part is unused and in its original packaging.

Return procedure for PSMN050-80PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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