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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN063-150D,118

Name: PSMN063-150D,118
Brand: Nexperia USA Inc.
SKU: PSMN063-150D,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN063-150D,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: PSMN063-150D,118.pdf

Description:: MOSFET N-CH 150V 29A DPAK

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Product details

Overview

PSMN063-150D from Nexperia is a standard-level N-channel TrenchMOS FET in DPAK (SOT428) package, designed for high-efficiency power switching in DC-DC converters and SMPS. It delivers 150 V V_DS, 63 mΩ R_DS(on) at V_GS = 10 V and I_D = 15 A (T_j = 25 °C), 150 W P_tot at T_mb = 25 °C, and supports 116 A pulsed drain current with 502 mJ unclamped avalanche energy.

For engineers reviewing the PSMN063-150D datasheet, PSMN063-150D pinout, PSMN063-150D application, or PSMN063-150D equivalent, key selection considerations include thermal resistance (R_th(j-mb) = 1 K/W), fast switching (t_d(off) = 48 ns, Q_G(tot) = 55 nC), gate threshold stability (V_GS(th) = 2–4 V at 25 °C), and ruggedness under repetitive transient stress in industrial power stages.

Technical Context

This MOSFET employs TrenchMOS silicon technology to achieve low on-resistance and high thermal efficiency in standard-level gate drive configurations (10 V). Its mounting base (pin 2) is internally connected to the drain, enabling direct heatsink attachment for enhanced thermal management in high-power density designs.

The device features a robust body diode with 105 ns reverse recovery time and 0.55 µC recovered charge, supporting synchronous rectification and freewheeling in hard-switched topologies. Avalanche rating (IAS = 29 A, EAS = 502 mJ) confirms suitability for unclamped inductive switching in non-isolated converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for primary-side switching in 48 V input SMPS and 100 V bus DC-DC stages.
R_DS(on)	60–63 mΩ @ V_GS = 10 V, I_D = 15 A, T_j = 25 °C - Enables <1.4 W conduction loss at 15 A, critical for >95% efficiency targets.
P_tot	150 W @ T_mb = 25 °C - Supports high continuous power handling when mounted on copper-clad PCB or external heatsink.
R_th(j-mb)	1 K/W - Junction-to-mounting-base thermal resistance enables rapid heat transfer to heatsink, limiting ΔT_j to 150 K at full 150 W dissipation.
Q_G(tot)	55 nC - Total gate charge determines driver strength requirement; compatible with common 1-A peak gate drivers at 100–500 kHz switching.
t_d(off)	48 ns - Turn-off delay ensures tight timing control in phase-shifted or resonant topologies requiring precise dead-time management.
E_AS	502 mJ - Non-repetitive avalanche energy rating validates reliability during load dump or short-circuit transients without external snubbers.

Pinout & Package

PSMN063-150D uses the SOT428 (DPAK) plastic surface-mount package with three leads (one cropped), where the mounting base (mb) is electrically connected to the drain terminal and serves as the primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode accepting 10 V logic-level drive; threshold range 2–4 V ensures compatibility with 3.3 V/5 V microcontrollers via level-shifting or buffer.
2 (D / mb)	Drain & Mounting Base	High-side power node and thermally conductive metal pad; must be soldered to large copper area or heatsink for R_th(j-mb) = 1 K/W performance.
3 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configuration.

Key Features

Feature	Design Value
Low R_DS(on) with TrenchMOS	63 mΩ enables <1.5 W conduction loss at 15 A, reducing thermal footprint in compact 50–200 W power modules.
Integrated drain-to-mounting-base connection	Direct thermal path (R_th(j-mb) = 1 K/W) eliminates need for thermal vias or interface paste in PCB-mounted heatsinking.
Fast switching with low Q_G	55 nC total gate charge and 48 ns t_d(off) support efficient operation up to 500 kHz in high-frequency SMPS designs.
Rugged body diode	105 ns t_rr and 0.55 µC Q_r minimize switching losses and voltage overshoot during freewheeling in buck and flyback converters.
Avalanche-rated structure	502 mJ E_AS allows safe operation under inductive turn-off stress without external clamping, simplifying protection circuitry.

Applications

DC-DC Converters

Switched-Mode Power Supplies

Use Scenario: High-efficiency 12 V–48 V input, 3.3 V/5 V/12 V output buck converters in telecom and server power modules.

IC Role / Device Role / Timing Role: Primary low-side synchronous rectifier or high-side main switch operating at 200–500 kHz.

Use Value: 63 mΩ R_DS(on) and 1 K/W thermal resistance maintain junction temperature below 125 °C at 15 A continuous, enabling fanless operation.

Use Scenario: AC-DC front-end PFC and secondary-side LLC resonant converter stages in industrial power supplies.

IC Role / Device Role / Timing Role: Main switching FET in continuous conduction mode (CCM) boost PFC or half-bridge LLC primary switch.

Use Value: 150 V V_DS rating and 502 mJ avalanche energy ensure robustness against line surges and transformer leakage spikes.

Motor Drive Inverters

LED Driver Circuits

Use Scenario: Low-voltage (<60 V) BLDC motor inverters in HVAC blowers, power tools, and robotics.

IC Role / Device Role / Timing Role: Phase-leg low-side switch in 3-phase inverter with PWM frequencies up to 30 kHz.

Use Value: Fast 38 ns fall time and low 27 nC Q_GD reduce switching losses and EMI generation during high-dV/dt commutation.

Use Scenario: Constant-current LED drivers for architectural and street lighting with 24–48 V input and multi-string outputs.

IC Role / Device Role / Timing Role: Dimmable PWM-controlled high-side switch regulating current through LED strings.

Use Value: Stable V_GS(th) (2–4 V) and low gate leakage (<100 nA) ensure precise dimming resolution and minimal standby power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V but rated only for 55 V V_DS; larger TO-220 package increases thermal resistance.	Not suitable for 100+ V bus applications; limited to ≤48 V systems.	Select only if lower on-resistance is prioritized over voltage rating and surface-mount assembly.
STP16NF15	V_DS = 150 V matched, but R_DS(on) = 120 mΩ and R_th(j-mb) not specified; TO-220 package lacks integrated heatsink pad.	Higher conduction loss and inferior thermal performance limit use to lower-current <10 A designs.	Prefer only when legacy TO-220 footprint is mandatory and thermal margin is available.

Compared with IRFZ44NPBF and STP16NF15, PSMN063-150D uniquely combines 150 V rating, 63 mΩ on-resistance, DPAK thermal integration (R_th(j-mb) = 1 K/W), and avalanche ruggedness-making it optimal for space-constrained, high-reliability 48–100 V industrial power stages.

Availability

PSMN063-150D is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor drive inverters requiring stable component supply across extended production lifecycles.

Supply support for PSMN063-150D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

This part belongs to the SiliconMAX standard-level TrenchMOS family, engineered for cost-sensitive yet thermally demanding industrial and computing power conversion applications where robustness and manufacturability are essential.

FAQ

What is the maximum continuous drain current for PSMN063-150D at 100 °C mounting base temperature?

The maximum continuous drain current is 20 A at T_mb = 100 °C and V_GS = 10 V, as specified in Table 4 (Limiting Values). This derating from 29 A at 25 °C reflects thermal constraints of the DPAK package under real-world heatsink conditions.

Is the mounting base electrically isolated from the drain terminal?

No-the mounting base (pin 2) is internally connected to the drain, as confirmed in Pinning Information (Table 2) and Package Outline (Figure 15). This design enables direct thermal coupling but requires electrical isolation of the heatsink in high-side configurations.

Does PSMN063-150D support 3.3 V logic-level gate drive?

No-it is a standard-level MOSFET with V_GS(th) ranging from 2 V to 4 V at 25 °C, but R_DS(on) is only guaranteed at V_GS = 10 V. At 3.3 V, the device remains in weak inversion and cannot deliver rated current; a gate driver or level shifter is required.

What is the typical reverse recovery charge (Q_r) of the integrated body diode?

The typical reverse recovery charge is 0.55 µC, measured at I_S = 20 A, dI_S/dt = −100 A/µs, V_DS = 25 V, and T_j = 25 °C (Table 6, Characteristics). This value directly impacts turn-on loss in synchronous rectification and must be accounted for in driver sizing.

PSMN063-150D,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 63mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

PSMN063-150D,118 FAQ

1.How can I place an order for PSMN063-150D,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN063-150D,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN063-150D,118 reliable?

The price and inventory of PSMN063-150D,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN063-150D,118 is usually 5 days.

3.What payment methods are accepted for PSMN063-150D,118?

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4.How is shipping managed for PSMN063-150D,118?

PSMN063-150D,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN063-150D,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN063-150D,118?

For technical support, including PSMN063-150D,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN063-150D,118 requirements.

6.How does Aetrix verify that PSMN063-150D,118 is sourced from the original manufacturer or authorized distributors?

All PSMN063-150D,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN063-150D,118 meets industry standards.

7.What is the process for return or replacement of PSMN063-150D,118?

All PSMN063-150D,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN063-150D,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN063-150D,118 part is unused and in its original packaging.

Return procedure for PSMN063-150D,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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