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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN070-200B,118

Name: PSMN070-200B,118
Brand: Nexperia USA Inc.
SKU: PSMN070-200B,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN070-200B,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN070-200B,118.pdf

Description:: MOSFET N-CH 200V 35A D2PAK

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Product details

Overview

PSMN070-200B,118 from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 200 V drain-source voltage, 35 A continuous drain current at T_mb = 25 °C, and 250 W total power dissipation. It delivers 60 mΩ typical R_DS(on) at V_GS = 10 V and ID = 17 A, with fast switching enabled by 28 nC Q_GD and 77 nC Q_G(tot), targeting high-efficiency DC-to-DC converters and switched-mode power supplies.

For engineers reviewing the PSMN070-200B,118 datasheet, PSMN070-200B,118 pinout, PSMN070-200B,118 application, or PSMN070-200B,118 equivalent, key selection criteria include thermal resistance (R_th(j-mb) = 0.6 K/W), avalanche ruggedness (462 mJ unclamped E_DS(AL)S), gate threshold voltage range (1–6 V over -55 to 175 °C), and diode reverse recovery performance (160 ns t_rr, 1 µC Q_r).

Technical Context

This device employs TrenchMOS silicon technology optimized for standard-level operation-requiring ≥10 V gate drive for full enhancement-and features an integrated source-drain diode with 0.85–1.2 V forward drop at 25 A. Its mounting base is electrically connected to the drain terminal, enabling low-inductance heatsinking while defining the primary thermal path.

The FET supports high-frequency switching via low dynamic parameters: C_iss = 4570 pF, C_oss = 370 pF, and Cr_ss = 160 pF at V_DS = 25 V; turn-on delay is 22 ns and fall time is 90 ns under standardized test conditions (V_DS = 100 V, R_L = 2.7 Ω, R_G(ext) = 5.6 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V maximum - defines safe blocking capability in high-voltage DC bus or flyback primary-side applications
R_DS(on)	60 mΩ typical at V_GS = 10 V, I_D = 17 A, T_j = 25 °C - sets conduction loss floor in continuous-current topologies
Q_GD	28 nC - directly impacts Miller-induced switching delay and gate driver power requirement
R_th(j-mb)	0.6 K/W - enables high-power dissipation with minimal junction-to-heatsink temperature rise
t_rr	160 ns - determines diode commutation loss and EMI generation during hard-switched freewheeling
E_DS(AL)S	462 mJ unclamped avalanche energy - provides robustness against inductive load transients without external snubbing

Pinout & Package

PSMN070-200B,118 uses the SOT404 (D2PAK) plastic surface-mount package with three leads and an exposed metal mounting base electrically tied to the drain. Pin 2 is internally connected to the mounting base and not externally accessible for signal connection.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control input requiring ≥10 V for full enhancement; low gate charge (77 nC total) reduces driver losses
2	Drain (D) / Mounting Base	High-current output node and primary thermal interface; electrically common with tab-requires isolation from heatsink unless referenced to same potential
3	Source (S)	Power return path and reference for gate drive; internal source inductance (7.5 nH) affects high-di/dt switching stability

Key Features

Feature	Design Value
Low R_DS(on) × Q_G figure of merit	60 mΩ × 77 nC = 4.62 Ω·nC - balances conduction and switching losses in 100–500 kHz SMPS designs
Integrated source-drain diode	160 ns t_rr, 1 µC Q_r - enables synchronous rectification or freewheeling without discrete diode in buck/boost stages
High avalanche energy rating	462 mJ unclamped - withstands repetitive inductive turn-off stress in motor drives or relay drivers without derating
Thermal resistance optimization	R_th(j-mb) = 0.6 K/W - allows >200 W dissipation with <120 °C junction rise above 80 °C heatsink temperature

Applications

Server VRM Power Stage

Industrial AC-DC Front-End

Use Scenario: High-current, high-efficiency 12 V input to 1 V output conversion in CPU/GPU voltage regulator modules.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–600 kHz with tight duty-cycle control.

Use Value: 60 mΩ R_DS(on) minimizes I²R loss at 35 A continuous, while 28 nC Q_GD ensures clean gate transitions under high dv/dt.

Use Scenario: Active clamp flyback or LLC resonant converter in industrial 24–48 V DC input power supplies.

IC Role / Device Role / Timing Role: Primary-side switching FET handling 200 V blocking and 35 A peak currents during burst-mode operation.

Use Value: 462 mJ avalanche energy rating absorbs leakage inductance spikes without snubber, improving reliability in unregulated line conditions.

Telecom DC-DC Brick

Automated Test Equipment PSU

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom shelf power systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward topology, driven with precise timing relative to primary switch.

Use Value: Low 0.85 V V_SD and 160 ns t_rr reduce conduction and recovery losses, increasing efficiency beyond 94% at full load.

Use Scenario: Programmable high-current output stage in precision bench power supplies with fast transient response.

IC Role / Device Role / Timing Role: Linear-assisted or hybrid switching pass element delivering up to 30 A with low thermal impedance.

Use Value: 0.6 K/W R_th(j-mb) enables direct bolt-down heatsinking, maintaining <100 °C junction at 25 A continuous with forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35NF20	200 V, 35 A, R_DS(on) = 55 mΩ typ, Q_G = 65 nC, TO-220 package	Higher R_th(j-a) (62 K/W vs. 0.6 K/W j-mb), no integrated mounting base	Preferred where PCB space permits through-hole mounting and lower gate charge is prioritized over thermal performance
IRFP4668PBF	200 V, 65 A, R_DS(on) = 22 mΩ typ, Q_G = 130 nC, TO-247 package	Lower R_DS(on) but higher Q_G and larger footprint; R_th(j-c) = 0.45 K/W	Selected when >40 A continuous current is required and gate drive capability supports 130 nC charge

Compared with STP35NF20 and IRFP4668PBF, PSMN070-200B,118 offers superior thermal management via its D2PAK mounting base, optimal R_DS(on)/Q_G trade-off for 300–500 kHz operation, and verified avalanche ruggedness-making it ideal for compact, high-reliability SMPS where heatsink integration and transient robustness are critical.

Availability

PSMN070-200B,118 is available at Aetrix Electronics and suitable for server VRMs, industrial AC-DC front-ends, and telecom DC-DC bricks requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN070-200B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with manufacturing rooted in process control and automotive-grade quality systems.

This device belongs to the SiliconMAX standard-level TrenchMOS family, engineered for cost-sensitive yet thermally demanding computing, communications, and industrial power conversion applications-not automotive or safety-critical use.

FAQ

What is the maximum continuous drain current rating for PSMN070-200B,118?

The maximum continuous drain current is 35 A at mounting base temperature (T_mb) = 25 °C, derating to 25 A at T_mb = 100 °C per the limiting values table. This rating assumes proper heatsinking via the exposed drain/mounting base and accounts for thermal resistance R_th(j-mb) = 0.6 K/W.

Is PSMN070-200B,118 suitable for avalanche operation?

Yes-PSMN070-200B,118 is characterized for unclamped inductive switching with E_DS(AL)S = 462 mJ at T_j(init) = 25 °C, I_D = 35 A, and V_sup ≤50 V. This rating is validated per JEDEC standards and supports reliable operation in circuits with significant leakage inductance.

How does the D2PAK package affect thermal design?

The SOT404 (D2PAK) package integrates a large copper mounting base electrically connected to the drain, providing a direct low-resistance thermal path from junction to heatsink (R_th(j-mb) = 0.6 K/W). Unlike TO-220 or SO-8 packages, this eliminates reliance on PCB copper for heat transfer and enables >200 W dissipation with appropriate mechanical clamping.

What is the gate threshold voltage range across temperature?

V_GS(th) ranges from 1 V (min at T_j = 175 °C) to 6 V (max at T_j = -55 °C), with 2–4 V typical at 25 °C. This wide variation requires gate drive designs that ensure ≥10 V over temperature to maintain low R_DS(on) and avoid linear-mode operation during hot startup.

PSMN070-200B,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN070-200B,118 FAQ

1.How can I place an order for PSMN070-200B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN070-200B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN070-200B,118 reliable?

The price and inventory of PSMN070-200B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN070-200B,118 is usually 5 days.

3.What payment methods are accepted for PSMN070-200B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN070-200B,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN070-200B,118?

PSMN070-200B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN070-200B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN070-200B,118?

For technical support, including PSMN070-200B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN070-200B,118 requirements.

6.How does Aetrix verify that PSMN070-200B,118 is sourced from the original manufacturer or authorized distributors?

All PSMN070-200B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN070-200B,118 meets industry standards.

7.What is the process for return or replacement of PSMN070-200B,118?

All PSMN070-200B,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN070-200B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN070-200B,118 part is unused and in its original packaging.

Return procedure for PSMN070-200B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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