Nexperia USA Inc. PSMN071-100NSEX

Overview

PSMN071-100NSE from Nexperia is an N-channel 100 V, 82 mΩ standard-level ASFET in DFN2020M-6 (SOT1220-2) package, engineered for linear-mode operation in high-power PoE power sourcing equipment (PSE), eFuse circuits, and inrush current limiting. It delivers 9.8 A continuous drain current at T_mb = 25 °C, features enhanced SOA for robust safe operating area under DC/linear stress, and supports unclamped avalanche energy up to 7.6 mJ.

For engineers reviewing the PSMN071-100NSE datasheet, PSMN071-100NSE pinout, PSMN071-100NSE application, or PSMN071-100NSE equivalent, key selection criteria include R_DS(on) temperature stability (142–187 mΩ at 175 °C), low Q_G(tot) of 6.5 nC (typ), 4.5 K/W junction-to-mounting-base thermal resistance, and DFN2020 footprint compatibility with high-density PoE and battery management layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for stable R_DS(on) across -55 °C to 175 °C and superior linear-mode ruggedness-critical for PoE PSE soft-start and eFuse current-limiting where devices operate in the ohmic region for extended durations. Its SOA curve (Fig. 3) sustains 8 A at 100 V for 10 µs and remains rated up to 9.8 A DC at T_mb = 25 °C.

The device integrates a low-leakage body diode (I_DSS ≤ 0.7 µA at 125 °C) and exhibits tightly controlled gate threshold voltage (V_GS(th) = 2.7 V typ at 25 °C, ±0.9 V over temperature), enabling predictable turn-on in precision load-switch applications. Gate charge parameters (Q_GD = 1 nC typ, Q_G(tot) = 6.5 nC typ) support fast, low-loss switching in relay-replacement topologies.

Key Specifications

Pinout & Package

DFN2020M-6 (SOT1220-2) package: ultra-thin 2.0 mm × 2.0 mm × 0.65 mm body with thermal-enhanced bottom-exposed pad; 6-terminal no-lead construction optimized for PCB heat spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IPP050N10N5 and SIHF10N100D, PSMN071-100NSE uniquely balances 82 mΩ R_DS(on), 7.6 mJ E_AS, and 2 mm × 2 mm footprint-making it the only viable option for miniaturized, linear-mode PoE PSE and eFuse IC integration.

Availability

PSMN071-100NSE is available at Aetrix Electronics and suitable for IEEE 802.3bt PoE PSE modules, battery management systems with eFuse protection, and 5G picocell RF bias control requiring stable component supply and long-term lifecycle assurance.

Supply support for PSMN071-100NSE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including MOSFETs, logic, bipolar transistors, and ESD protection devices-serving automotive, industrial, and consumer markets.

The ASFET product line delivers application-optimized power MOSFETs for linear-mode and switching use cases in power-over-Ethernet, eFuse, and solid-state relay replacement, emphasizing SOA robustness, thermal efficiency, and compact packaging.

FAQ

What is the maximum continuous drain current for PSMN071-100NSE at 100 °C mounting base temperature?

The datasheet specifies 6.9 A continuous drain current at T_mb = 100 °C (Fig. 2). This value reflects thermal derating due to reduced heat dissipation capability; actual current must be validated against PCB copper area, ambient airflow, and adjacent component heating in the final layout.

Does PSMN071-100NSE require a gate resistor for stable operation in eFuse applications?

A gate resistor (typically 5 Ω) is recommended to dampen ringing during fast switching, especially when driving inductive loads or long PCB traces. The device's low Q_G(tot) (6.5 nC) and Q_GD (1 nC) minimize Miller-induced oscillation, but external R_G ensures controlled dV/dt during current-limit transitions.

Can PSMN071-100NSE be used in automotive applications?

No-PSMN071-100NSE is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or guaranteed PPAP documentation. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use only in industrial, telecom, or consumer equipment.

How does the DFN2020M-6 package achieve lower thermal resistance than standard DFN2020?

The DFN2020M-6 (SOT1220-2) uses a thermally enhanced die attach and exposed copper pad design that reduces R_th(j-mb) to 4.5 K/W (typ), versus ~10–15 K/W for standard DFN2020. This is achieved via optimized internal metal layers and solderable bottom surface, enabling direct thermal coupling to PCB ground planes.