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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN0R7-25YLD/2X

Name: PSMN0R7-25YLD/2X
Brand: Nexperia USA Inc.
SKU: PSMN0R7-25YLD/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN0R7-25YLD/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1023, 4-LFPAK

Datasheet:: PSMN0R7-25YLD/2X.pdf

Description:: PSMN0R7-25YLD/SOT1023/4 LEADS

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Product details

Overview

PSMN0R7-25YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT1023) package, rated for 25 V V_DS, 0.72 mΩ R_DS(on) at V_GS = 10 V and 25 A, 300 A continuous drain current capability (PCB-limited), and optimized for 4.5 V gate drive. It delivers ultra-low switching losses via NextPowerS3 SchottkyPlus technology and targets high-efficiency, high-frequency DC/DC conversion in server and telecom power stages.

For engineers reviewing the PSMN0R7-25YLD datasheet, PSMN0R7-25YLD pinout, PSMN0R7-25YLD application, or PSMN0R7-25YLD equivalent, key selection criteria include its 0.59 K/W junction-to-mounting-base thermal resistance, 11.9 nC Q_GD at 4.5 V drive, soft-recovery diode with 57.7 ns t_rr, and 100% avalanche ruggedness tested to 190 A I_AS.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with SchottkyPlus body diode integration-enabling Schottky-like low forward voltage (0.77 V typical at 25 A) and soft reverse recovery (S = 0.9) without elevated leakage (>1 µA at 25 °C). Its LFPAK56 clip-bonded construction eliminates wire bonds and die attach glue, delivering low parasitic inductance and 150 °C junction-rated reliability.

The device operates as a primary-side or secondary-side synchronous rectifier switch with logic-level gate threshold (1.2–2.2 V), fast switching (t_r = 48.3 ns, t_f = 38.2 ns), and robust safe operating area up to 1482 A pulsed drain current. Gate charge profile shows 50.9 nC Q_G(tot) at 4.5 V, enabling efficient operation in VRM and POL modules above 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V maximum drain-source voltage - defines absolute upper limit for blocking capability in low-voltage power rails.
R_DS(on)	0.72 mΩ typical at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 100 A, critical for high-current POL efficiency.
I_D (cont)	300 A demonstrated continuous current - validated under application conditions; PCB thermal design determines real-world limit.
Q_GD	11.9 nC at V_GS = 4.5 V, V_DS = 12 V - directly governs turn-off energy and EMI in hard-switched topologies.
t_rr	57.7 ns reverse recovery time - ensures minimal shoot-through risk and low diode switching loss in synchronous rectification.
R_th(j-mb)	0.59 K/W typical junction-to-mounting-base thermal resistance - enables direct heatsinking via exposed drain pad for high-power density layouts.
V_GS(th)	1.66 V typical threshold voltage - ensures full enhancement at 4.5 V logic-level drive, eliminating need for gate boosters.

Pinout & Package

LFPAK56 (SOT1023) is a clip-bonded, lead-frame-based surface-mount package with exposed mounting base connected to drain, three source terminals, and one gate terminal. It features wave-solderable leads, no wire bonds or die attach adhesive, and is qualified to 150 °C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source connections reduce source inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single low-inductance gate input optimized for 4.5 V logic-level drive and fast switching control.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return node.

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft-recovery (S = 0.9), 57.7 ns t_rr, 0.77 V V_SD at 25 A - reduces synchronous rectifier switching loss and EMI vs. standard MOSFET diodes.
Ultra-low Q_G/Q_GD	50.9 nC Q_G(tot), 11.9 nC Q_GD at 4.5 V - minimizes gate drive power and improves system efficiency at >300 kHz switching frequencies.
100% avalanche tested	I_AS = 190 A, E_AS = 174 mJ - guarantees ruggedness against inductive load transients in motor control and OR-ing applications.
Clip-bonded construction	No wire bonds or epoxy die attach - eliminates bond-wire fatigue failure modes and supports 150 °C continuous operation.
Optimized for 4.5 V drive	V_GS(th) = 1.66 V typ., R_DS(on) = 0.76 mΩ at V_GS = 4.5 V - enables direct interface with standard logic-level controllers without level shifters.

Applications

Server DC/DC Conversion

Telecom Secondary-Side Rectification

Use Scenario: High-current, high-density buck converters supplying CPU/GPU core voltage in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier operating at 300–1000 kHz.

Use Value: 0.72 mΩ R_DS(on) and 0.59 K/W R_th(j-mb) enable >95% efficiency at 200 A output while minimizing board area and thermal mass.

Use Scenario: Isolated DC/DC modules in 48 V telecom systems delivering 12 V/5 V to line cards and baseband processors.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes on secondary side of forward or LLC converters.

Use Value: SchottkyPlus diode with 57.7 ns t_rr and 0.77 V V_SD cuts conduction and switching losses by >30% versus discrete Schottky solutions.

VRM / POL Modules

Power OR-ing

Use Scenario: Point-of-load regulators powering ASICs, FPGAs, DDR memory, and SoCs in AI accelerators and networking switches.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck stages, driven by integrated PWM controllers with 4.5 V gate outputs.

Use Value: Logic-level compatibility and 11.9 nC Q_GD allow stable, low-jitter phase interleaving at 1 MHz+ without gate driver overhead.

Use Scenario: Redundant 12 V power inputs in industrial controllers and telecom shelf management units.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFETs acting as ideal diodes to prevent reverse current and enable seamless switchover.

Use Value: Ultra-low R_DS(on) (0.72 mΩ) limits forward drop to <7.2 mV at 10 A, reducing heat generation and improving system reliability over mechanical relays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V V_DS, 1.4 mΩ R_DS(on) @ 4.5 V, PG-TDSON-8 package - higher voltage rating but double R_DS(on) at same drive.	Better suited for 36 V input systems; less optimal for 12 V POL where conduction loss dominates.	Select when system requires 40 V blocking margin and can tolerate ~2× conduction loss at 100 A.
Vishay SiR626DP	25 V V_DS, 0.82 mΩ R_DS(on) @ 4.5 V, PowerPAK SO-8 - similar R_DS(on) but no SchottkyPlus diode (t_rr = 110 ns).	Higher EMI and diode loss in synchronous rectification due to slower, harder recovery.	Select when cost sensitivity outweighs soft-recovery requirement and layout allows additional snubbing.

Compared with BSC014N04LS6 and SiR626DP, PSMN0R7-25YLD offers the lowest R_DS(on) at 4.5 V drive and unique SchottkyPlus diode performance-making it superior for high-frequency, high-current POL and telecom rectification where both conduction and switching losses must be minimized simultaneously.

Availability

PSMN0R7-25YLD is available at Aetrix Electronics and suitable for server DC/DC conversion, telecom secondary-side rectification, and VRM/Pol modules requiring stable component supply, high-volume traceability, and long-term lifecycle assurance.

Supply support for PSMN0R7-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for power management, logic, and analog applications.

PSMN0R7-25YLD belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial infrastructure where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for PSMN0R7-25YLD?

The datasheet states 300 A has been successfully demonstrated in application tests under optimized PCB thermal conditions. However, actual continuous current is determined by mounting base temperature and PCB copper area - Fig. 2 shows 235 A at T_mb = 100 °C. Designers must use R_th(j-mb) = 0.59 K/W and thermal modeling to establish safe operating limits for their layout.

Does PSMN0R7-25YLD require a gate resistor for stability?

Yes - although its low Q_GD (11.9 nC) and RG = 1.35 Ω intrinsic gate resistance support fast switching, a series gate resistor (typically 2–10 Ω) is recommended to damp ringing caused by PCB trace inductance and prevent unintended turn-on during high-di/dt events. The value must balance switching speed against EMI and voltage overshoot.

How does the SchottkyPlus body diode differ from a standard MOSFET body diode?

SchottkyPlus integrates a tailored p-n structure that achieves soft reverse recovery (S = 0.9), 57.7 ns t_rr, and 0.77 V forward voltage - matching Schottky diode performance without the high leakage (>1 µA at 25 °C) typical of integrated Schottkys. This enables lower EMI and reduced switching loss in synchronous rectification without compromising reliability.

Can PSMN0R7-25YLD be used in automotive applications?

No - PSMN0R7-25YLD is not AEC-Q101 qualified and is explicitly designated for industrial, computing, and telecom applications per Nexperia's legal disclaimers. Its qualification covers 150 °C operation but excludes automotive-specific stress testing, failure mode analysis, and PPAP documentation required for vehicle systems.

PSMN0R7-25YLD/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1023, 4-LFPAK

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 300A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.72mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 110.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8320 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN0R7-25YLD/2X FAQ

1.How can I place an order for PSMN0R7-25YLD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN0R7-25YLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN0R7-25YLD/2X reliable?

The price and inventory of PSMN0R7-25YLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN0R7-25YLD/2X is usually 5 days.

3.What payment methods are accepted for PSMN0R7-25YLD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN0R7-25YLD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN0R7-25YLD/2X?

PSMN0R7-25YLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN0R7-25YLD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN0R7-25YLD/2X?

For technical support, including PSMN0R7-25YLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN0R7-25YLD/2X requirements.

6.How does Aetrix verify that PSMN0R7-25YLD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN0R7-25YLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN0R7-25YLD/2X meets industry standards.

7.What is the process for return or replacement of PSMN0R7-25YLD/2X?

All PSMN0R7-25YLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN0R7-25YLD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN0R7-25YLD/2X part is unused and in its original packaging.

Return procedure for PSMN0R7-25YLD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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