Nexperia USA Inc. PSMN0R7-25YLDX

Overview

PSMN0R7-25YLD from Nexperia is an N-channel logic-level MOSFET in LFPAK56 (SOT1023) package, rated for 25 V V_DS, 0.72 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 300 A continuous drain current at T_mb = 25 °C. It employs NextPowerS3 technology with SchottkyPlus body diode for low EMI, soft recovery, and <1 µA leakage at 25 °C - deployed in high-efficiency POL modules and VRMs.

For engineers reviewing the PSMN0R7-25YLD datasheet, PSMN0R7-25YLD pinout, PSMN0R7-25YLD application, or PSMN0R7-25YLD equivalent, key selection criteria include gate drive compatibility at 4.5 V, junction-to-mounting-base thermal resistance (0.59 K/W), avalanche ruggedness (190 A I_AS), Q_GD (11.9 nC), and LFPAK56 clip-bonded construction for reliability at 150 °C.

Technical Context

This MOSFET uses Nexperia's NextPowerS3 architecture with SchottkyPlus technology to deliver Schottky-like reverse recovery (t_rr = 57.7 ns, Q_r = 83.2 nC) while maintaining ultra-low leakage (<1 µA at 25 °C). Its optimized charge profile features Q_G(tot) = 50.9 nC and Q_GD = 11.9 nC at V_GS = 4.5 V, enabling fast switching with minimal ringing.

The LFPAK56 package integrates a solder-connected mounting base (drain) and three parallel source terminals, achieving low parasitic inductance and R_th(j-mb) = 0.59 K/W. It is qualified to 150 °C junction temperature and wave-solderable with exposed leads for optical inspection.

Key Specifications

Pinout & Package

LFPAK56 (SOT1023) is a clip-bonded, lead-frame package with exposed mounting base (drain), three paralleled source terminals, and single gate terminal - eliminating wire bonds and adhesive for enhanced thermal and power cycling reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with BSC014N04LS6 and SiR626DP, PSMN0R7-25YLD uniquely combines 25 V rating, sub-0.75 mΩ R_DS(on), SchottkyPlus soft recovery, and LFPAK56 thermal performance - making it optimal for space-constrained, high-current, high-frequency POL and VRM designs where efficiency, EMI, and reliability are co-prioritized.

Availability

PSMN0R7-25YLD is available at Aetrix Electronics and suitable for server point-of-load regulation, telecom synchronous rectification, and ASIC VRM applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN0R7-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

PSMN0R7-25YLD belongs to the NextPowerS3 portfolio - engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and computing infrastructure where low R_DS(on), fast switching, and robust avalanche performance are critical.

FAQ

What is the maximum continuous drain current for PSMN0R7-25YLD under real PCB conditions?

The datasheet specifies 300 A continuous current at T_mb = 25 °C, validated in application testing. In practice, achievable current depends on PCB thermal design: a 1"² 2 oz copper pad yields ~100 A at T_mb = 100 °C per Fig. 2. Derating is required above 100 °C mounting base temperature, with 235 A max at T_mb = 100 °C.

Does PSMN0R7-25YLD require a gate resistor for stability in high-frequency buck converters?

Yes - although its internal gate resistance is 1.35 Ω, an external series gate resistor (typically 2–5 Ω) is recommended to dampen ringing caused by PCB trace inductance and driver impedance mismatch. This is especially critical above 500 kHz switching, where Q_GD-driven oscillations can increase EMI and stress the gate oxide.

How does the SchottkyPlus body diode differ from a standard MOSFET body diode in practical operation?

SchottkyPlus delivers soft reverse recovery (S = 0.9), t_rr = 57.7 ns, and Q_r = 83.2 nC - significantly faster and less oscillatory than conventional body diodes (e.g., 110+ ns t_rr). Crucially, it maintains <1 µA leakage at 25 °C, avoiding the high leakage trade-off typical of integrated Schottky diodes, thus preserving light-load efficiency.

Can PSMN0R7-25YLD be used in linear mode (e.g., electronic load or LDO pass element)?

No - it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) curve (Fig. 3) shows limited DC capability beyond V_DS > 5 V, and thermal runaway risk increases rapidly under high V_DS × I_D bias. It is designed exclusively for switched-mode applications with defined duty cycles and thermal management.