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Nexperia USA Inc. PSMN0R9-25YLDX
- Part No.:
- PSMN0R9-25YLDX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN0R9-25YLDX.pdf
- Description:
- MOSFET N-CH 25V 300A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:5,070
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Product details
Overview
PSMN0R9-25YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 25 V VDS, 0.85 mΩ RDS(on) at VGS = 10 V and 25 A, and 300 A continuous drain current (Tmb = 25 °C). It employs NextPowerS3 technology with "SchottkyPlus" body diode for low EMI, soft recovery, and <1 µA leakage at 25 °C. It is optimized for high-frequency synchronous rectification in server DC/DC converters.
For engineers reviewing the PSMN0R9-25YLD datasheet, PSMN0R9-25YLD pinout, PSMN0R9-25YLD application, or PSMN0R9-25YLD equivalent, key selection criteria include gate threshold voltage (1.73 V typ), ultra-low QG (47.2 nC), junction-to-mounting-base thermal resistance (0.56 K/W), avalanche ruggedness (190 A IAS), and LFPAK56's clip-bonded, wire-bond-free construction for 175 °C operation.
Technical Context
This MOSFET uses Nexperia's NextPowerS3 architecture with integrated Schottky-like body diode behavior-achieving soft reverse recovery (S = 0.8) and low spiking-without sacrificing leakage performance (<1 µA at 25 °C). Its gate threshold voltage (1.73 V typ) and strong transconductance enable robust turn-on with 4.5 V logic-level drive.
The device features ultra-low dynamic parameters: QGD = 9.9 nC and QOSS = 44 nC at VGS = 4.5 V, supporting high-efficiency operation above 500 kHz switching. Its LFPAK56 package delivers low parasitic inductance and resistance via copper-clip die attach and exposed mounting base, eliminating wire bonds and adhesive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage in high-side or low-side switch configurations; suitable for 12 V and 24 V bus systems. |
| RDS(on) | 0.85 mΩ max at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 300 A, critical for POL and VRM efficiency. |
| ID (cont) | 300 A at Tmb = 25 °C - Validated continuous current under ideal PCB thermal conditions; limited by board layout in practice. |
| QG(tot) | 47.2 nC - Low total gate charge reduces driver power loss and enables fast switching with standard gate drivers. |
| Rth(j-mb) | 0.56 K/W typ - Enables high power dissipation (238 W at Tmb = 25 °C) with minimal junction temperature rise over mounting base. |
| VGS(th) | 1.73 V typ - Ensures reliable enhancement-mode turn-on with 3.3 V or 4.5 V logic-level controllers without level-shifting. |
| EAS | 3343 mJ - Avalanche energy rating supports unclamped inductive switching in OR-ing and motor control without failure. |
Pinout & Package
PSMN0R9-25YLD is housed in LFPAK56 (SOT669), a surface-mount Power-SO8 variant with copper-clip die attach, no wire bonds or adhesive, and a thermally enhanced exposed mounting base connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single gate input with low RG (1.16 Ω) for stable high-frequency drive and reduced ringing. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain; serves as primary heat path to PCB and structural current return. |
Key Features
| Feature | Design Value |
|---|---|
| SchottkyPlus body diode | Soft reverse recovery (S = 0.8), 44 ns trr, and <1 µA leakage at 25 °C-enables efficient synchronous rectification without external diode or snubbers. |
| Ultra-low QGD and QOSS | 9.9 nC QGD and 44 nC QOSS at VGS = 4.5 V-minimizes switching losses and improves light-load efficiency in high-frequency DC/DC. |
| 100% avalanche tested | Rated for 190 A non-repetitive avalanche current-ensures robustness against inductive kickback in motor drives and OR-ing circuits. |
| Clip-bonded LFPAK56 | No wire bonds or glue; qualified to 175 °C junction temperature-delivers superior power cycling reliability and thermal stability vs. SO-8. |
| Wave-solderable leads | Exposed lead edges allow full visual solder joint inspection-supports high-yield automated assembly in industrial and telecom production lines. |
Applications
| Server DC/DC Conversion | Telecom Secondary-Side Rectification |
|---|---|
|
Use Scenario: High-current, high-efficiency buck converter in 48 V to 12 V intermediate bus conversion for AI accelerators and CPU VRMs. IC Role / Device Role / Timing Role: Primary low-side synchronous rectifier MOSFET, operating at 300–600 kHz with 4.5 V gate drive from controller IC. Use Value: 0.85 mΩ RDS(on) and 47.2 nC QG reduce conduction and switching losses simultaneously, enabling >95% efficiency at 200 A output. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V to 12 V telecom PSUs powering baseband units and RF amplifiers. IC Role / Device Role / Timing Role: Fast-turning, low-QGD MOSFET replacing Schottky diodes to minimize forward drop and reverse recovery loss. Use Value: SchottkyPlus diode behavior (0.78 V VSD, 44 ns trr) eliminates need for external snubbers while maintaining <1 µA leakage at elevated temperatures. |
| Point-of-Load (POL) Modules | Power OR-ing Circuits |
|
Use Scenario: Compact 3.3 V or 1.8 V POL module delivering up to 150 A to ASICs, GPUs, and DDR memory subsystems. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power stage switch with tight thermal coupling to PCB via mounting base. Use Value: 0.56 K/W Rth(j-mb) allows direct heatsinking through PCB copper, enabling compact form factor without external heatsinks. |
Use Scenario: Redundant 12 V power supply OR-ing in network switches and storage controllers using ideal diode configuration. IC Role / Device Role / Timing Role: Low-VTH (1.73 V typ), low-RDS(on) MOSFET controlled by dedicated OR-ing controller to replace mechanical diodes. Use Value: Ultra-low on-resistance minimizes forward voltage drop (<5 mV at 100 A), reducing power loss and thermal stress versus discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | 20 V VDS, 0.95 mΩ RDS(on), 210 A ID, PQFN 3.3 × 3.3 mm package, higher QG (52 nC) | Limited to ≤20 V systems; lower current rating and higher gate charge increase losses above 300 kHz | Prefer PSMN0R9-25YLD for 25 V bus designs requiring >250 A or >500 kHz operation |
| DMTH3004LPSQ-13 | 30 V VDS, 0.95 mΩ RDS(on), 240 A ID, PowerDI5060 package, higher Rth(j-mb) (0.75 K/W) | Broadens voltage margin but sacrifices thermal performance and current capability | Choose PSMN0R9-25YLD when thermal density and 300 A capability are prioritized over 30 V headroom |
Compared with IRLHS6342TRPBF and DMTH3004LPSQ-13, PSMN0R9-25YLD delivers superior current density (300 A), lowest Rth(j-mb) (0.56 K/W), and best high-frequency efficiency due to its 47.2 nC QG and SchottkyPlus diode-making it optimal for space-constrained, high-power telecom and server POL designs.
Availability
PSMN0R9-25YLD is available at Aetrix Electronics and suitable for server DC/DC conversion, telecom secondary-side rectification, and point-of-load (POL) modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for volume production.
Supply support for PSMN0R9-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.
PSMN0R9-25YLD belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial infrastructure where low RDS(on), soft switching, and thermal robustness are critical.
FAQ
What is the maximum continuous drain current for PSMN0R9-25YLD under real-world PCB conditions?
The datasheet specifies 300 A at Tmb = 25 °C, but practical current is constrained by PCB thermal design. With a 1"² 2 oz copper pad on FR4, sustained current drops to ~180–220 A depending on airflow and ambient temperature. Derating curves in Figure 2 show 285 A at Tmb = 100 °C, confirming thermal management-not silicon limits-is the dominant constraint.
Does PSMN0R9-25YLD require a gate resistor for stable operation at 1 MHz switching?
Yes-a 2.2 Ω to 4.7 Ω external gate resistor is recommended to dampen ringing caused by low gate resistance (1.16 Ω) and stray inductance. The device's ultra-low QGD (9.9 nC) and fast tr/tf (42 ns/27.9 ns) make it susceptible to oscillation without proper gate control, especially in hard-switched topologies.
How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode in terms of reverse recovery?
SchottkyPlus achieves soft reverse recovery (S = 0.8) and 44 ns trr-comparable to discrete Schottky diodes-while maintaining <1 µA leakage at 25 °C. Standard MOSFET body diodes typically exhibit hard recovery (S < 0.3), longer trr (>100 ns), and higher Qr, increasing EMI and losses in synchronous rectification.
Can PSMN0R9-25YLD be used in linear mode (e.g., electronic load or hot-swap controller)?
No-it is not characterized or qualified for linear (SOA-limited) operation. Its Safe Operating Area (Figure 3) shows only pulsed and continuous DC boundaries; no linear-mode derating curves or thermal impedance data for extended analog conduction are provided. Use only in switched-mode applications per datasheet limits.
PSMN0R9-25YLDX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.85mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 89.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6721 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 238W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN0R9-25YLDX FAQ
1.How can I place an order for PSMN0R9-25YLDX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN0R9-25YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN0R9-25YLDX reliable?
The price and inventory of PSMN0R9-25YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN0R9-25YLDX is usually 5 days.
3.What payment methods are accepted for PSMN0R9-25YLDX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN0R9-25YLDX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN0R9-25YLDX?
PSMN0R9-25YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN0R9-25YLDX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN0R9-25YLDX?
For technical support, including PSMN0R9-25YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN0R9-25YLDX requirements.
6.How does Aetrix verify that PSMN0R9-25YLDX is sourced from the original manufacturer or authorized distributors?
All PSMN0R9-25YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN0R9-25YLDX meets industry standards.
7.What is the process for return or replacement of PSMN0R9-25YLDX?
All PSMN0R9-25YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN0R9-25YLDX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN0R9-25YLDX part is unused and in its original packaging.
Return procedure for PSMN0R9-25YLDX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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