Nexperia USA Inc. PSMN0R9-30ULD/2X

Overview

PSMN0R9-30ULD from Nexperia is an N-channel 30 V, 0.87 mΩ R_DS(on) logic-level MOSFET in SOT1023A (LFPAK56-UL2595) package, rated for 300 A continuous drain current at T_mb = 25 °C and 100% avalanche tested to 190 A. It employs NextPowerS3 Schottky-Plus technology for low EMI, soft-recovery switching (s-factor > 1), and < 1 µA diode leakage at 25 °C - deployed in high-efficiency motor drives requiring UL2595 creepage/clearance compliance.

For engineers reviewing the PSMN0R9-30ULD datasheet, PSMN0R9-30ULD pinout, PSMN0R9-30ULD application, or PSMN0R9-30ULD equivalent, key selection criteria include its 4.5 V gate drive optimization, 0.45 K/W junction-to-mounting-base thermal resistance, ultra-low Q_G (109 nC) and Q_GD (13.5 nC), and UL2595-certified enhanced creepage in LFPAK56 packaging.

Technical Context

This MOSFET uses a trench-gate, superjunction-enhanced silicon structure with clip-bonded die attach and solder-only interconnects - eliminating wire bonds and adhesive for 150 °C qualification and high-reliability power cycling. Its Schottky-Plus body diode delivers soft reverse recovery (t_rr = 52 ns, Q_r = 67 nC) without elevated leakage, enabling clean turn-off in high-frequency synchronous rectification.

The device operates as a unidirectional high-side or low-side switch with gate threshold voltage of 1.5 V (typ), ±20 V gate-source rating, and avalanche ruggedness validated to 2575 mJ. Thermal design leverages the exposed mounting base (drain-connected) for direct PCB heatsinking, achieving 227 W total power dissipation at T_mb = 25 °C.

Key Specifications

Pinout & Package

SOT1023A (LFPAK56-UL2595) is a 4-lead surface-mount package with an exposed copper mounting base (drain-connected), optimized for wave soldering and visual solder inspection. It features improved creepage (>8.0 mm) and clearance (>4.0 mm) per UL2595 requirements, achieved via enhanced mold compound geometry and leadframe isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with PSMN0R9-30YLD, the -30ULD adds UL2595-compliant spacing at identical electrical specs; versus IRL1404ZPBF, it delivers 3.7× lower conduction loss, 1.9× higher current rating, and certified soft-recovery performance in a surface-mount package.

Availability

PSMN0R9-30ULD is available at Aetrix Electronics and suitable for brushed motor drives, battery-powered power tools, industrial BLDC inverters, and UL-certified UPS output stages requiring stable component supply and long-term manufacturability.

Supply support for PSMN0R9-30ULD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies - delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and consumer applications.

This part belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion where low switching loss, soft recovery, and safety certification are mandatory.

FAQ

What is the maximum continuous drain current for PSMN0R9-30ULD under real-world PCB conditions?

The datasheet specifies 300 A at T_mb = 25 °C, but practical current is constrained by PCB copper area, thermal interface quality, and ambient temperature. With a 1"² 2 oz FR4 pad and forced air cooling, sustained currents of 180–220 A are achievable before reaching 150 °C junction limit.

Does PSMN0R9-30ULD require a gate resistor for stability in 100 kHz motor control?

Yes - a 2.2–4.7 Ω series gate resistor is recommended to damp ringing caused by low gate-drain capacitance (C_rss = 445 pF) and fast edge rates (t_r = 49.8 ns). This prevents unintended turn-on due to Miller effect and ensures robust operation with standard 3.3 V MCU drivers.

How does the Schottky-Plus body diode differ from a standard MOSFET body diode?

It provides Schottky-like soft reverse recovery (t_rr = 52 ns, s-factor > 1) and low forward voltage (V_SD = 0.76 V at 25 A), yet maintains leakage < 1 µA at 25 °C - unlike true Schottky diodes which exhibit >100 µA leakage. This avoids thermal runaway in synchronous rectification.

Can PSMN0R9-30ULD be wave-soldered without solder mask defined pads?

Yes - its SOT1023A package is explicitly qualified for wave soldering. Exposed leads allow full visual inspection, and the mounting base is designed for reliable wetting. Use standard SnPb or lead-free profiles with preheat ≤150 °C and peak temperature ≤260 °C for 10 seconds max.