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Nexperia USA Inc. PSMN0R9-30ULDX
- Part No.:
- PSMN0R9-30ULDX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1023, 4-LFPAK
- Datasheet:
-
PSMN0R9-30ULDX.pdf
- Description:
- MOSFET N-CH 30V 300A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:4,315
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Product details
Overview
PSMN0R9-30ULDX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK56-UL2595 (SOT1023A) package, rated for 30 V VDS, 0.87 mΩ RDS(on) at VGS = 10 V and 25 A, and 300 A continuous drain current at Tmb = 25 °C. It employs NextPowerS3 Schottky-Plus technology to deliver low spiking, soft-recovery switching (s-factor > 1), and < 1 µA diode leakage at 25 °C - optimized for high-efficiency motor control and UL2595-compliant battery-powered appliances.
For engineers reviewing the PSMN0R9-30ULDX datasheet, PSMN0R9-30ULDX pinout, PSMN0R9-30ULDX application, or PSMN0R9-30ULDX equivalent, key selection criteria include its 0.45 K/W junction-to-mounting-base thermal resistance, 13.5 nC QGD at 4.5 V gate drive, avalanche rating (100% tested at IAS = 190 A), and UL2595 creepage/clearance compliance in SOT1023A.
Technical Context
This MOSFET uses Nexperia's NextPowerS3 Schottky-Plus process to integrate a low-leakage, soft-recovery body diode with s-factor > 1 and 52 ns trr, enabling high-frequency synchronous rectification without Schottky-level leakage. Its gate threshold voltage (1.2–2.2 V) and optimized 4.5 V drive capability support direct interfacing with microcontrollers and low-voltage logic.
The SOT1023A package features clip-bonded die attach, exposed mounting base (drain-connected), and wave-solderable leads - delivering 0.45 K/W Rth(j-mb), 227 W Ptot at Tmb = 25 °C, and validated 150 °C junction operation per AEC-Q200-aligned reliability testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V nominal bus systems with margin for transients and ripple. |
| RDS(on) | 0.65 mΩ typical at VGS = 10 V, 25 A, 25 °C - enables < 1.6 W conduction loss at 200 A. |
| ID (continuous) | 300 A at Tmb = 25 °C - validated in application tests; limited by PCB thermal design in practice. |
| QGD | 13.5 nC at VGS = 4.5 V - minimizes Miller-induced switching delay and improves hard-switching efficiency. |
| trr / Qr | 52 ns reverse recovery time, 67 nC recovered charge - reduces diode switching loss and EMI in freewheeling paths. |
| Rth(j-mb) | 0.45 K/W typical - enables high-power dissipation with minimal thermal interface resistance to heatsink or PCB copper. |
| EAS | 2575 mJ non-repetitive avalanche energy - supports robust operation under inductive load turn-off stress. |
Pinout & Package
LFPAK56-UL2595 (SOT1023A) is a surface-mount, clip-bonded, solder-die-attached package with exposed mounting base (drain-connected), no wire bonds or adhesive, qualified to 150 °C junction temperature and wave-solderable with visual solder inspection capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single low-inductance gate input optimized for 4.5 V logic-level drive and fast switching. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current return node. |
Key Features
| Feature | Design Value |
|---|---|
| UL2595-compliant creepage/clearance | SOT1023A package meets UL2595 spacing requirements for safety-critical battery-powered equipment. |
| Schottky-Plus body diode | Soft-recovery (s-factor > 1), 52 ns trr, < 1 µA leakage at 25 °C - eliminates need for external Schottky in many DC/DC and motor drives. |
| Avalanche ruggedness | 100% production-tested at IAS = 190 A - ensures reliable operation under unclamped inductive switching stress. |
| Ultra-low gate charge | QG(tot) = 109 nC at 10 V, QGD = 13.5 nC at 4.5 V - enables efficient high-frequency PWM up to 500 kHz. |
| Low parasitic inductance/resistance | Clip-bonded construction and 3-source-pin layout minimize LSS and RDS(on) - critical for minimizing voltage overshoot and conduction loss. |
Applications
| Brushed DC Motor Control | Battery-Powered Power Tools |
|---|---|
Use Scenario: H-bridge half-bridge switch in cordless drill driver circuits operating from 18–24 V Li-ion packs. IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional 200+ A peak currents during stall and acceleration. Use Value: 0.65 mΩ RDS(on) and 300 A rating reduce I²R losses and thermal derating; UL2595 clearance satisfies portable tool safety certification. |
Use Scenario: Main power FET in compact, high-torque impact drivers requiring rapid burst current delivery and thermal resilience. IC Role / Device Role / Timing Role: Low-side switching element in battery protection and load switching circuits with 4.5 V MCU gate drive. Use Value: Schottky-Plus diode enables efficient regenerative braking without external diode; 0.45 K/W Rth(j-mb) sustains duty-cycle bursts without thermal shutdown. |
| UL2595-Compliant E-Bike Controllers | High-Efficiency DC/DC Converters |
Use Scenario: Phase-leg switch in 24–36 V e-bike motor controllers where creepage distance must exceed 4 mm per UL2595. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM switch in 3-phase inverter stage with 20–100 kHz switching. Use Value: SOT1023A package geometry achieves required creepage; soft-recovery diode suppresses voltage spikes during commutation. |
Use Scenario: Primary-side switch in 24 V input, 5–12 V output buck converters for industrial IoT gateways. IC Role / Device Role / Timing Role: High-frequency power switch with 109 nC QG(tot) enabling > 300 kHz operation while maintaining < 2% gate drive loss. Use Value: Ultra-low QGD and Ciss/Coss ratio improve light-load efficiency; 150 °C rating supports sealed enclosure operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PSMN0R9-30YLD | Same silicon die but in standard LFPAK56 (SOT669); lacks UL2595 creepage/clearance enhancements. | Approved for non-UL2595 applications only - unsuitable for certified battery-powered tools or e-bikes. | Select only when UL2595 compliance is not required and cost optimization is prioritized. |
| IRL1404ZPBF | Higher RDS(on) (3.2 mΩ), lower ID (160 A), TO-220 package; no Schottky-Plus diode or UL2595 qualification. | Legacy through-hole solution for lower-current, non-certified industrial controls. | Use only for retrofit or low-volume designs where SMT footprint and UL compliance are not constraints. |
Compared with PSMN0R9-30ULDX, PSMN0R9-30YLD offers identical electrical performance but fails UL2595 clearance; IRL1404ZPBF trades 4× higher on-resistance and larger footprint for broader distributor availability - neither matches the combination of 300 A rating, 0.45 K/W thermal resistance, and safety-certified packaging.
Availability
PSMN0R9-30ULDX is available at Aetrix Electronics and suitable for brushed motor control, battery-powered power tools, UL2595-compliant e-bike controllers, and high-efficiency DC/DC converters requiring stable component supply across production lifecycles.
Supply support for PSMN0R9-30ULDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and consumer markets.
This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion and motor drive applications where low-loss switching, soft-recovery diodes, and safety-certified packaging are mandatory.
FAQ
What is the maximum continuous drain current for PSMN0R9-30ULDX?
The datasheet specifies 300 A continuous drain current at mounting base temperature (Tmb) = 25 °C, validated in application testing. In real-world designs, actual current is constrained by PCB copper area, heatsinking, ambient temperature, and thermal interface resistance - not the MOSFET alone. Derating curves in Figure 2 show 284 A at Tmb = 100 °C.
Does PSMN0R9-30ULDX require a gate resistor for stability?
Yes - a 5 Ω external gate resistor is used in the datasheet's switching time measurements (Figure 12–13). This value balances switching speed against ringing suppression; lower values increase dV/dt and EMI risk, while higher values degrade efficiency. Layout-dependent parasitics may necessitate tuning between 3–10 Ω for optimal trade-off.
How does the Schottky-Plus body diode differ from a standard MOSFET body diode?
The Schottky-Plus diode delivers soft-recovery (s-factor > 1), 52 ns trr, and < 1 µA leakage at 25 °C - characteristics typically found only in integrated Schottky diodes. Unlike standard body diodes, it avoids high reverse recovery charge (Qr = 67 nC) and associated voltage spikes, enabling efficient synchronous rectification without external diodes.
Can PSMN0R9-30ULDX be used in automotive applications?
No - this part is not AEC-Q101 qualified and is explicitly designated for industrial and consumer applications. Nexperia states in Section 12 that "non-automotive qualified products" are unsuitable for automotive use. For automotive-grade equivalents, consult Nexperia's AEC-Q101-qualified NextPowerS3 variants such as PSMN2R0-30MLDX.
PSMN0R9-30ULDX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1023, 4-LFPAK
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.87mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 109 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7668 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 227W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN0R9-30ULDX FAQ
1.How can I place an order for PSMN0R9-30ULDX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN0R9-30ULDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN0R9-30ULDX reliable?
The price and inventory of PSMN0R9-30ULDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN0R9-30ULDX is usually 5 days.
3.What payment methods are accepted for PSMN0R9-30ULDX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN0R9-30ULDX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN0R9-30ULDX?
PSMN0R9-30ULDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN0R9-30ULDX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN0R9-30ULDX?
For technical support, including PSMN0R9-30ULDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN0R9-30ULDX requirements.
6.How does Aetrix verify that PSMN0R9-30ULDX is sourced from the original manufacturer or authorized distributors?
All PSMN0R9-30ULDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN0R9-30ULDX meets industry standards.
7.What is the process for return or replacement of PSMN0R9-30ULDX?
All PSMN0R9-30ULDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN0R9-30ULDX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN0R9-30ULDX part is unused and in its original packaging.
Return procedure for PSMN0R9-30ULDX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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