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Nexperia USA Inc. PSMN0R9-30YLD/2X
- Part No.:
- PSMN0R9-30YLD/2X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1023, 4-LFPAK
- Datasheet:
-
PSMN0R9-30YLD/2X.pdf
- Description:
- PSMN0R9-30YLD/SOT1023/4 LEADS
- Quantity:
- Payment:
- Shipping:
Inventory:3,086
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Product details
Overview
PSMN0R9-30YLD from Nexperia is an N-channel 30 V, 0.87 mΩ RDS(on) at 10 V, 300 A logic-level power MOSFET in LFPAK56 (SOT1023) package, utilizing NextPowerS3 SchottkyPlus technology for high-efficiency synchronous rectification and high-frequency DC-DC conversion in server and telecom POL modules.
For engineers reviewing the PSMN0R9-30YLD datasheet, PSMN0R9-30YLD pinout, PSMN0R9-30YLD application, or PSMN0R9-30YLD equivalent, this device is selected for low-spiking, soft-recovery switching in 4.5 V–10 V gate-driven high-current power stages where <1 µA leakage, 0.35 K/W Rth(j-mb), and avalanche ruggedness (190 A tested) are critical.
Technical Context
This MOSFET employs a clip-bonded, solder die-attach Power-SO8 structure with no wire bonds or adhesive, enabling 150 °C junction operation and wave-solder compatibility. Its SchottkyPlus body diode delivers soft reverse recovery (S-factor > 0.9), 52 ns trr, and 67 nC Qr - matching Schottky-like performance without elevated leakage.
The device is optimized for logic-level drive: VGS(th) = 1.5 V typ, fully enhanced at 4.5 V, with ultra-low dynamic charge metrics - QG(tot) = 109 nC at 10 V, QGD = 13.5 nC, and Ciss = 7668 pF - enabling fast, low-loss switching up to several MHz in VRM and OR-ing topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe blocking voltage in 12 V/24 V bus and 48 V intermediate bus applications. |
| RDS(on) | 0.65 mΩ typ at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 300 A, critical for high-current POL efficiency. |
| ID | 300 A continuous at Tmb = 25 °C - validated under application conditions; limited by PCB thermal design in practice. |
| QG(tot) | 109 nC at VGS = 10 V - determines gate driver power and switching speed; supports high-frequency operation with low drive loss. |
| Rth(j-mb) | 0.35 K/W typ - enables direct mounting to heatsink or copper plane, delivering >290 W power dissipation capability. |
| VGS(th) | 1.5 V typ - ensures full enhancement with standard 3.3 V or 4.5 V logic-level drivers, eliminating need for level shifters. |
| trr | 52 ns - reduces switching losses and EMI in hard-switched synchronous rectifiers and OR-ing circuits. |
Pinout & Package
LFPAK56 (SOT1023) is a clip-bonded, lead-frame-based surface-mount package with exposed mounting base connected to drain, optimized for low-inductance, high-current routing and thermal transfer. It features wave-solderable leads and visual solder inspection capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and resistance, improving current sharing and reducing common-source inductance in paralleled configurations. |
| 4 | Gate (G) | Single gate input with low internal RG (1.4 Ω AC) - minimizes gate ringing and simplifies driver layout for high-speed switching. |
| Mounting Base | Drain (D) | Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current drain return, requiring PCB copper fill and thermal vias. |
Key Features
| Feature | Design Value |
|---|---|
| SchottkyPlus body diode | Soft reverse recovery (S-factor > 0.9), 52 ns trr, <1 µA leakage at 25 °C - eliminates need for external Schottky while suppressing voltage spikes and EMI. |
| Avalanche ruggedness | 100% tested at IAS = 190 A - ensures robustness against inductive load transients and unclamped inductive switching events. |
| Ultra-low QG/QGD | 109 nC total gate charge, 13.5 nC gate-drain charge - enables fast, efficient switching with minimal driver stress and reduced turn-off energy loss. |
| Optimized for 4.5 V drive | RDS(on) = 0.79 mΩ typ at VGS = 4.5 V - supports direct interface with microcontroller GPIOs and low-voltage PWM controllers without gate boosting. |
| High-reliability construction | Clip-bonded die, solder die attach, no wire bonds or glue - qualified to 150 °C, eliminating failure modes associated with bond wires and adhesives. |
Applications
| Server On-Board DC-DC | Telecom Secondary-Side SR |
|---|---|
|
Use Scenario: High-current, high-density buck converters on server motherboards delivering 12 V → 1.8 V to CPUs and ASICs. IC Role / Device Role: Primary synchronous rectifier switch in multiphase VRMs, handling up to 300 A per phase with minimal conduction loss. Use Value: 0.65 mΩ RDS(on) and 0.35 K/W Rth(j-mb) enable >95% efficiency at 300 A while maintaining Tj < 125 °C under airflow-limited conditions. |
Use Scenario: Secondary-side synchronous rectification in telecom 48 V input isolated DC-DC modules for base station RF power amplifiers. IC Role / Device Role: Low-VDS rectifier replacing Schottky diodes in forward or LLC converters operating at 300–500 kHz. Use Value: SchottkyPlus diode behavior eliminates reverse recovery loss and reduces EMI, allowing smaller output filters and higher power density than discrete Schottky solutions. |
| Point-of-Load (POL) Module | Power OR-ing Circuit |
|
Use Scenario: Compact, integrated POL modules supplying GPU, DDR, and FPGA rails in AI accelerators and edge computing systems. IC Role / Device Role: Main power switch in integrated buck regulators with integrated inductor, driven by 4.5 V PWM controllers. Use Value: Logic-level threshold (1.5 V typ) and low QG allow clean switching at 1–2 MHz, minimizing size of passive components and supporting dynamic load transient response <1 µs. |
Use Scenario: Redundant 12 V power supply OR-ing in industrial control cabinets and network switches. IC Role / Device Role: Back-to-back configured MOSFET for ideal diode functionality, preventing reverse current and enabling hot-swap capability. Use Value: Ultra-low RDS(on) reduces forward voltage drop to <30 mV at 100 A, cutting conduction loss by >80% versus Schottky diodes and eliminating thermal runaway risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | 40 V VDS, 1.4 mΩ RDS(on) @ 10 V, PG-HSOF-8 package, higher Rth(j-mb) (0.55 K/W) | Higher voltage rating but lower current capability (120 A) and less optimized for 4.5 V drive (VGS(th) = 1.8 V min) | Prefer when 40 V blocking margin is required and thermal budget allows higher RDS(on); not suitable for 300 A continuous use. |
| Vishay SiR626DP | 30 V VDS, 0.95 mΩ RDS(on) @ 10 V, PowerPAK SO-8L, QG(tot) = 122 nC, no avalanche rating | Similar voltage/current class but lacks 100% avalanche testing and SchottkyPlus soft-recovery diode | Acceptable where avalanche stress is absent and EMI sensitivity is low; requires external snubbing in hard-switched OR-ing. |
Compared with BSC014N04LS6 and SiR626DP, PSMN0R9-30YLD uniquely combines 300 A current rating, sub-0.7 mΩ RDS(on), 4.5 V logic drive, and SchottkyPlus soft recovery - making it the only option qualified for high-current, high-frequency, low-EMI server and telecom POL designs requiring guaranteed avalanche ruggedness.
Availability
PSMN0R9-30YLD is available at Aetrix Electronics and suitable for server DC-DC, telecom secondary-side synchronous rectification, and point-of-load power delivery requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-volume production.
Supply support for PSMN0R9-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including MOSFETs, logic, analog, and ESD protection devices - serving automotive, industrial, and computing markets.
This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center and telecom infrastructure where low spiking, soft recovery, and logic-level drive are mandatory.
FAQ
What is the maximum continuous drain current for PSMN0R9-30YLD under real-world PCB conditions?
The datasheet specifies 300 A continuous current at Tmb = 25 °C, validated in application testing. In practice, achievable current depends on PCB copper area, thermal vias, airflow, and ambient temperature. With a 1"² 2 oz FR4 pad and moderate airflow, sustained currents of 180–220 A are typical before reaching Tj = 150 °C.
Does PSMN0R9-30YLD require a gate resistor for stability in high-frequency switching?
Yes - although its low internal RG (1.4 Ω) and optimized layout reduce ringing, a 2–5 Ω external gate resistor is recommended to dampen oscillation during fast switching (especially above 500 kHz) and control dV/dt-induced shoot-through in half-bridge configurations.
How does the SchottkyPlus body diode differ from a standard MOSFET body diode in practical circuit behavior?
The SchottkyPlus diode exhibits soft reverse recovery (S-factor > 0.9), 52 ns trr, and <1 µA leakage at 25 °C - unlike conventional body diodes that show hard recovery, high Qr, and >100 µA leakage. This reduces voltage overshoot, EMI, and switching losses in synchronous rectifiers and OR-ing circuits without external diode replacement.
Can PSMN0R9-30YLD be used in parallel configurations, and what layout considerations apply?
Yes - its three-source-pin configuration and low parasitic inductance support paralleling. Critical layout practices include symmetrical gate drive paths with matched trace lengths, individual gate resistors, Kelvin source connections to minimize common-source inductance, and uniform thermal coupling via shared copper pour and thermal vias to the mounting base.
PSMN0R9-30YLD/2X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1023, 4-LFPAK
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.87mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 109 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7668 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 291W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN0R9-30YLD/2X FAQ
1.How can I place an order for PSMN0R9-30YLD/2X through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN0R9-30YLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN0R9-30YLD/2X reliable?
The price and inventory of PSMN0R9-30YLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN0R9-30YLD/2X is usually 5 days.
3.What payment methods are accepted for PSMN0R9-30YLD/2X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN0R9-30YLD/2X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN0R9-30YLD/2X?
PSMN0R9-30YLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN0R9-30YLD/2X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN0R9-30YLD/2X?
For technical support, including PSMN0R9-30YLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN0R9-30YLD/2X requirements.
6.How does Aetrix verify that PSMN0R9-30YLD/2X is sourced from the original manufacturer or authorized distributors?
All PSMN0R9-30YLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN0R9-30YLD/2X meets industry standards.
7.What is the process for return or replacement of PSMN0R9-30YLD/2X?
All PSMN0R9-30YLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN0R9-30YLD/2X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN0R9-30YLD/2X part is unused and in its original packaging.
Return procedure for PSMN0R9-30YLD/2X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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