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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN130-200D,118

Name: PSMN130-200D,118
Brand: Nexperia USA Inc.
SKU: PSMN130-200D,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN130-200D,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: PSMN130-200D,118.pdf

Description:: MOSFET N-CH 200V 20A DPAK

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Product details

Overview

PSMN130-200D from Nexperia is a standard-level N-channel TrenchMOS FET in DPAK (SOT428) package, designed for high-efficiency power switching in DC-DC converters and switched-mode power supplies. It delivers 200 V drain-source voltage rating, 20 A continuous drain current at T_mb = 25 °C, 120–130 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and features low thermal resistance (R_th(j-mb) = 1 K/W) for enhanced thermal management in industrial and computing power stages.

For engineers reviewing the PSMN130-200D datasheet, PSMN130-200D pinout, PSMN130-200D application, or PSMN130-200D equivalent, key selection criteria include its 200 V blocking capability, 150 W total power dissipation at T_mb = 25 °C, fast switching performance (Q_GD = 22 nC), avalanche ruggedness (E_AS = 252 mJ), and mounting-base–referenced thermal path optimized for PCB heatsinking.

Technical Context

This device employs TrenchMOS silicon technology to achieve low on-resistance and fast switching with minimal gate charge (Q_G(tot) = 65 nC, Q_GD = 22 nC). Its gate threshold voltage (V_GS(th) = 2–4 V at T_j = 25 °C) ensures reliable enhancement-mode turn-on with standard 10 V gate drive.

The integrated source-drain diode exhibits V_SD = 0.95–1.2 V at I_S = 25 A and T_j = 25 °C, with t_rr = 124 ns and Q_r = 0.74 µC under specified conditions, supporting synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum drain-source blocking voltage; supports 176 V AC mains-derived DC bus designs with safety margin.
I_D (continuous)	20 A at T_mb = 25 °C - Continuous current capability defined at mounting base temperature, not ambient; requires heatsink design.
R_DS(on)	120–130 mΩ at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Low conduction loss enabling <1.3 W I²R loss at 10 A DC load.
Q_GD	22 nC - Gate-drain charge directly impacts Miller-induced switching delay and EMI in hard-switched converters.
R_th(j-mb)	1 K/W - Thermal resistance from junction to mounting base; enables direct thermal coupling to PCB copper pour or heatsink.
E_AS	252 mJ - Non-repetitive avalanche energy rating; supports unclamped inductive switching stress without failure.
C_iss	2470 pF - Input capacitance at V_DS = 25 V; determines gate driver current demand during turn-on transitions.

Pinout & Package

PSMN130-200D uses the SOT428 (DPAK) plastic surface-mount package with three leads and an exposed mounting base electrically connected to the drain terminal. The mounting base serves as both mechanical anchor and primary thermal path to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires ≤20 V gate-source voltage; threshold 2–4 V enables TTL/CMOS-compatible drive.
2 (D)	Drain	Main high-side power terminal; internally bonded to mounting base; must be isolated from other circuit potentials unless referenced to same node.
3 (S)	Source	Power return path and gate reference; low-inductance internal bond (L_S = 7.5 nH) minimizes switching ringing.
Mounting base	Drain (common)	Exposed copper pad tied to drain; provides dominant thermal path (R_th(j-mb) = 1 K/W); must be soldered to ≥10 cm² 2-oz copper pour.

Key Features

Feature	Design Value
Low R_DS(on)	120–130 mΩ at 10 V drive enables <1.3 W conduction loss at 10 A, reducing heat sink requirements in 50–200 W SMPS.
Fast switching	Q_GD = 22 nC and t_f = 38 ns support >500 kHz operation in hard-switched converters with controlled dV/dt.
High avalanche ruggedness	E_AS = 252 mJ allows safe operation under unclamped inductive turn-off events common in motor drives and relay drivers.
Thermal efficiency	R_th(j-mb) = 1 K/W enables direct junction-to-heatsink thermal path; 150 W P_tot achievable with modest PCB copper area.
Integrated body diode	V_SD = 0.95–1.2 V and t_rr = 124 ns support freewheeling in buck converters and synchronous rectification with external control.

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V input to 1.2 V output voltage regulation for CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter; operates at 300–600 kHz with precise gate timing.

Use Value: Low R_DS(on) and fast switching minimize conduction and switching losses, improving overall VRM efficiency by ≥1.2% at 100 A load.

Use Scenario: 48 V to 12 V isolated or non-isolated DC-DC conversion in programmable logic controllers and industrial HMIs.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter; handles repetitive 200 V transient spikes during MOSFET turn-off.

Use Value: 200 V V_DS rating and 252 mJ E_AS ensure robustness against reflected transformer spikes and line transients without snubber overhead.

Telecom PSU Half-Bridge

Consumer SMPS Primary Switch

Use Scenario: 380 V DC bus half-bridge stage in telecom rectifier modules delivering 1–3 kW output.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge topology; commutates at fixed frequency with ZVS assistance.

Use Value: Low Q_GD (22 nC) and C_oss (207 pF) reduce dead-time sensitivity and improve zero-voltage switching window stability.

Use Scenario: 230 V AC input, 12 V/5 A output offline flyback adapter for smart home hubs and IoT gateways.

IC Role / Device Role / Timing Role: Primary-side switching transistor; subjected to 650 V peak drain stress during startup and overload.

Use Value: 200 V rating is sufficient for 120 V AC designs; for 230 V AC, it is used with clamping circuits-its low R_DS(on) reduces standby power loss below 300 mW.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V, 20 A, R_DS(on) = 140 mΩ (typ), Q_GD = 28 nC, TO-220 package	Higher R_DS(on) and gate charge; through-hole mounting limits high-frequency layout density	Prefer when legacy TO-220 footprint compatibility or higher surge current (I_DM = 80 A) is prioritized over thermal performance.
IRF640NPBF	200 V, 18 A, R_DS(on) = 180 mΩ (typ), Q_GD = 32 nC, TO-220 package	Higher conduction and switching losses; older planar process; no avalanche rating specified	Select only for cost-sensitive, low-frequency (<100 kHz), non-avalanche-critical linear or switching applications where thermal margin is ample.

Compared with STP20NM20 and IRF640NPBF, PSMN130-200D offers lower R_DS(on), lower Q_GD, superior thermal resistance via DPAK mounting base, and guaranteed avalanche energy-making it optimal for compact, high-efficiency, high-reliability 200 V power stages.

Availability

PSMN130-200D is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for PSMN130-200D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for automotive, industrial, and computing markets.

This part belongs to Nexperia's SiliconMAX standard-level TrenchMOS FET product line, engineered for cost-effective, thermally efficient power switching in non-automotive industrial and computing power conversion systems.

FAQ

What is the maximum continuous drain current for PSMN130-200D?

The maximum continuous drain current is 20 A at mounting base temperature T_mb = 25 °C. At T_mb = 100 °C, it derates to 14 A per the limiting values table. This rating assumes proper PCB copper heatsinking of the mounting base, not ambient air cooling.

Is PSMN130-200D suitable for avalanche operation?

Yes-it is rated for non-repetitive drain-source avalanche energy E_AS = 252 mJ at T_j(init) = 25 °C, with I_AS = 20 A. This specification is validated per JEDEC standards and supports safe operation during unclamped inductive switching events in flyback or motor drive circuits.

How does the DPAK mounting base connect electrically?

The mounting base is internally connected to the drain (pin 2) and forms the primary thermal interface. It must be soldered to a large copper area on the PCB, and any heatsink attached to it will also be at drain potential-requiring appropriate isolation if referenced to other system potentials.

What gate drive voltage is required for full enhancement?

A minimum V_GS of 10 V is recommended to achieve the specified R_DS(on) of 120–130 mΩ. The gate threshold voltage V_GS(th) ranges from 2–4 V at 25 °C, but full channel enhancement and low on-resistance require ≥10 V drive; gate voltage must remain within −20 V to +20 V absolute limits.

PSMN130-200D,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

PSMN130-200D,118 FAQ

1.How can I place an order for PSMN130-200D,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN130-200D,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN130-200D,118 reliable?

The price and inventory of PSMN130-200D,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN130-200D,118 is usually 5 days.

3.What payment methods are accepted for PSMN130-200D,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN130-200D,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN130-200D,118?

PSMN130-200D,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN130-200D,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN130-200D,118?

For technical support, including PSMN130-200D,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN130-200D,118 requirements.

6.How does Aetrix verify that PSMN130-200D,118 is sourced from the original manufacturer or authorized distributors?

All PSMN130-200D,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN130-200D,118 meets industry standards.

7.What is the process for return or replacement of PSMN130-200D,118?

All PSMN130-200D,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN130-200D,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN130-200D,118 part is unused and in its original packaging.

Return procedure for PSMN130-200D,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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