Nexperia USA Inc. PSMN165-200K,518

Overview

PSMN165-200K from Nexperia is a standard-level N-channel TrenchMOS FET in SO8 (SOT96-1) package, designed for high-frequency switching in DC-DC converters and power supplies. It features 200 V drain-source voltage rating, 130–165 mΩ R_DS(on) at V_GS = 10 V / I_D = 2.5 A / T_j = 25 °C, 2.9 A continuous drain current at T_sp = 80 °C, and 12–16.5 nC Q_GD, enabling efficient operation in computing and industrial power stages.

For engineers reviewing the PSMN165-200K datasheet, PSMN165-200K pinout, PSMN165-200K application, or PSMN165-200K equivalent, key selection criteria include its 200 V V_DS rating, low R_DS(on) with thermal stability up to 150 °C junction temperature, fast switching (t_d(off) ≤ 80 ns), and SO8 footprint compatibility with board-level thermal management via solder-point cooling.

Technical Context

This device employs TrenchMOS silicon technology to achieve low conduction losses and fast switching performance. Its gate charge profile (Q_G(tot) = 40 nC, Q_GD = 12–16.5 nC) supports efficient hard-switching in synchronous buck topologies, while its 20 K/W R_th(j-sp) enables direct thermal coupling to metal-clad PCBs.

The FET exhibits a gate threshold voltage range of 2–4 V at 25 °C and 1.2–6 V across –55 to 150 °C, ensuring robust turn-on margin under wide temperature and drive conditions. Its integrated body diode has V_SD = 0.7–1.1 V at I_S = 2.3 A and t_rr = 105 ns, supporting moderate-frequency freewheeling in non-synchronous designs.

Key Specifications

Pinout & Package

PSMN165-200K uses the SOT96-1 (SO8) plastic small-outline package, 8-lead, 3.9 mm body width, optimized for surface-mount assembly and solder-point thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRFZ44NPBF and STP20NM20, PSMN165-200K delivers superior voltage rating compliance, lower conduction loss in SMT form factor, and optimized gate charge for high-frequency switching - making it the preferred choice for space-constrained, 200 V-class power stages requiring no heatsink.

Availability

PSMN165-200K is available at Aetrix Electronics and suitable for computer motherboards, DC-to-DC converters, and switched-mode power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PSMN165-200K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process control and automotive-grade quality standards.

This device belongs to the SiliconMAX standard-level TrenchMOS family, engineered specifically for cost-sensitive, high-efficiency power conversion in computing, communications, and industrial equipment where thermal performance and switching speed are balanced against footprint and bill-of-materials cost.

FAQ

What is the maximum continuous drain current for PSMN165-200K under real-world PCB conditions?

The datasheet specifies 2.9 A continuous drain current at solder point temperature (T_sp) = 80 °C, measured on a metal-clad substrate per Figure 1. This value assumes ≥2 cm² of 2-oz copper connected to pins 1–3 (source) and 5–8 (drain), with no external heatsink. Exceeding T_sp = 80 °C requires linear derating per the normalized I_D curve.

Can PSMN165-200K be used with 3.3 V gate drive in logic-level applications?

No - its gate threshold voltage (V_GS(th)) is 2–4 V at 25 °C, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). At 3.3 V, R_DS(on) exceeds 1 Ω, causing excessive conduction loss. A gate driver or level shifter is mandatory for reliable switching.

How does the SO8 (SOT96-1) package affect thermal performance compared to TO-220?

The SOT96-1 package relies on solder-point thermal transfer rather than case-to-heatsink conduction. Its R_th(j-sp) = 20 K/W is measured to the PCB copper, not ambient air. This enables lower-profile designs but requires careful PCB layout - including thermal vias under the drain pads and ≥2 cm² copper pour - to match the thermal performance of a TO-220 with heatsink.

Is the body diode suitable for continuous freewheeling in non-synchronous topologies?

Yes - the integrated body diode supports 3.1 A continuous source current (I_S) at T_sp = 80 °C and has characterized t_rr = 105 ns and Q_r = 0.45 µC. However, its V_SD = 0.7–1.1 V at 2.3 A results in higher conduction loss than an external Schottky; use only where synchronous rectification is impractical or cost-prohibitive.