Nexperia USA Inc. PSMN1R0-100CSFJ

Overview

PSMN1R0-100CSF from Nexperia is a 100 V, 1.04 mΩ N-channel MOSFET in CCPAK1212i (SOT8005A) package, qualified to 175 °C junction temperature and rated for 460 A continuous drain current at T_mb = 25 °C. It features low Q_rr (99 nC), high avalanche energy rating (1630 mJ), and inverted top-side cooling architecture-designed for high-power BLDC motor control, battery protection, and OR-ing circuits.

For engineers reviewing the PSMN1R0-100CSF datasheet, PSMN1R0-100CSF pinout, PSMN1R0-100CSF application, or PSMN1R0-100CSF equivalent, key selection criteria include R_DS(on) temperature stability up to 175 °C, gate charge (359 nC typ), thermal resistance to mounting base (0.075 K/W), and JEDEC-qualified CCPAK1212i package compatibility for industrial power stages.

Technical Context

This NextPower MOSFET employs an optimized trench-gate process with enhanced body diode softness and low reverse recovery charge, enabling efficient hard-switching in high-current half-bridge and full-bridge topologies. Its 12-terminal CCPAK1212i package integrates six parallel source pins, one gate pin, and five drain pins plus mounting base-all electrically connected to drain-to minimize parasitic inductance and maximize thermal conduction.

The device operates with standard-level gate drive (V_GS(th) = 2–4 V, ΔV_GS(th)/ΔT = −9.3 mV/K), supports 100% avalanche testing per IEC 60134, and delivers stable R_DS(on) of 1.7 mΩ at T_j = 175 °C-critical for sustained operation in industrial motor drives and uninterruptible power supplies.

Key Specifications

Pinout & Package

CCPAK1212i (SOT8005A) is a 12 mm × 12 mm × 2.5 mm surface-mount copper clip package with exposed drain-mounted thermal pad. Its inverted layout places the drain on the bottom side for direct heatsink attachment and top-side cooling capability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IPP020N10N5 and SIHF100N10E, PSMN1R0-100CSF provides 2.2× higher continuous current, 0.075 K/W vs ≥0.5 K/W thermal resistance, and guaranteed avalanche ruggedness-making it the only option capable of sustaining 460 A with top-side cooling in space-constrained industrial power modules.

Availability

PSMN1R0-100CSF is available at Aetrix Electronics and suitable for battery protection, BLDC motor control, and high-power full-bridge converter applications requiring stable component supply, long-term lifecycle support, and JEDEC-standard package compatibility.

Supply support for PSMN1R0-100CSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

The NextPower product line targets high-efficiency, high-power-density applications including motor drives, industrial power supplies, and battery management-emphasizing ruggedness, thermal performance, and open-market package standardization.

FAQ

What is the maximum allowable mounting base temperature for continuous 460 A operation?

The datasheet specifies 460 A continuous drain current at T_mb = 25 °C (Fig. 2). At T_mb = 100 °C, the rated current remains 460 A due to thermal design validation-but actual current must be limited by PCB copper area, heatsink interface resistance, and ambient airflow. Derating begins above 100 °C mounting base temperature per Fig. 1's normalized power curve.

Can PSMN1R0-100CSF be used in synchronous rectification with 5 V gate drive?

No. The gate threshold voltage range is 2–4 V, but R_DS(on) increases significantly below V_GS = 10 V: at V_GS = 7 V and T_j = 25 °C, R_DS(on) rises to 0.95–1.43 mΩ (vs 0.83–1.04 mΩ at 10 V). For reliable synchronous rectification, 10 V or higher gate drive is required to maintain low conduction loss and avoid thermal runaway.

Is the CCPAK1212i package compatible with standard reflow profiles?

Yes. The device is qualified for lead-free reflow per J-STD-020 MSL3, with peak temperature up to 260 °C. Recommended stencil thickness is 0.1 mm, and the SOT8005A footprint (Fig. 19) uses 1.85 mm × 11.8 mm thermal pad with 0.7 mm solder mask opening-ensuring void-free solder joint formation under standard convection reflow.

Does PSMN1R0-100CSF require external gate resistors for stability?

Yes. With 1.3 Ω typical internal gate resistance and low gate-drain capacitance (69.5 nC Q_GD), the device is prone to oscillation in high-dI/dt switching. A 4.7–10 Ω external series gate resistor is recommended to dampen ringing, especially in half-bridge configurations with >100 A/ns slew rates-verified in Nexperia's application note AN11158.