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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R0-25YLDX

Name: PSMN1R0-25YLDX
Brand: Nexperia USA Inc.
SKU: PSMN1R0-25YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R0-25YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R0-25YLDX.pdf

Description:: MOSFET N-CH 25V 100A LFPAK56

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Product details

Overview

PSMN1R0-25YLD from Nexperia is an N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated 25 V V_DS, 1.0 mΩ R_DS(on) @ 10 V, 240 A continuous drain current at T_mb = 25 °C, and optimized for 4.5 V gate drive. It delivers ultra-low Q_G (71.8 nC), soft-recovery switching, and SchottkyPlus body diode performance with <1 µA leakage at 25 °C - deployed in high-frequency POL modules and server DC/DC converters.

For engineers reviewing the PSMN1R0-25YLD datasheet, PSMN1R0-25YLD pinout, PSMN1R0-25YLD application, or PSMN1R0-25YLD equivalent, key selection criteria include its 0.68 K/W junction-to-mounting-base thermal resistance, avalanche-rated 190 A I_AS, 1.19 mΩ R_DS(on) @ 4.5 V, low EMI spiking behavior, and clip-bonded die construction qualified to 175 °C.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with SchottkyPlus technology - enabling Schottky-like reverse recovery (Q_r = 36.7 nC, t_rr = 36.9 ns, S = 0.9) without elevated leakage. Its gate charge profile features low Q_GD (8 nC) and Q_G(tot) (71.8 nC), supporting fast, efficient hard-switching at >1 MHz in synchronous rectification topologies.

The LFPAK56 package integrates a copper mounting base directly connected to the drain, delivering 0.68 K/W R_th(j-mb) and eliminating wire bonds via clip bonding. It supports wave and reflow soldering, with exposed leads for optical solder inspection and PCB thermal pad designs per Fig. 5 (1" square, 2 oz Cu FR4).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines use in ≤24 V bus systems like server VRMs and GPU power rails.
R_DS(on) @ 4.5 V	1.19 mΩ (typ) - Enables efficient operation directly from standard logic-level drivers without level-shifting.
I_D (cont)	240 A @ T_mb = 25 °C - Requires robust PCB copper area (e.g., 1"² pad) to sustain full current without exceeding 175 °C junction limit.
Q_G(tot)	71.8 nC - Low total gate charge reduces driver loss and enables high-frequency PWM control up to 2 MHz.
E_AS	1762 mJ - Avalanche energy rating validated at 190 A I_AS; supports unclamped inductive switching in OR-ing and motor control.
R_th(j-mb)	0.68 K/W - Thermal path from junction to mounting base enables direct heatsinking to chassis or copper plane for high-power density designs.
Q_r	36.7 nC - Low recovered charge with soft reverse recovery (S = 0.9) minimizes voltage overshoot and EMI in secondary-side sync rectifiers.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount, single-ended power package with clip-bonded die, no wire bonds, and a copper mounting base electrically connected to the drain terminal. It features wave- and reflow-solderable exposed leads and is qualified to 175 °C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications like POL converters.
4	Gate (G)	Single gate input with low RG (1.14 Ω typ); compatible with standard 4.5 V logic drivers and gate resistors ≥1 Ω for controlled turn-on/off.
Mounting Base (mb)	Drain (D)	Exposed copper base serves as primary drain connection and thermal conduction path; must be soldered to PCB thermal pad for rated power dissipation.

Key Features

Feature	Design Value
Avalanche ruggedness	100% tested at I_AS = 190 A - Ensures reliability in inductive load switching without external snubbers in OR-ing and motor drives.
SchottkyPlus body diode	Q_r = 36.7 nC, t_rr = 36.9 ns, V_SD = 0.79 V - Delivers low-loss, soft-recovery freewheeling without Schottky's leakage penalty (<1 µA @ 25 °C).
Ultra-low gate charge	Q_GD = 8 nC, Q_G(tot) = 71.8 nC - Reduces switching losses and driver stress in high-frequency (>500 kHz) synchronous buck converters.
Thermal construction	Clip-bonded die + solder die attach - Eliminates wire bond fatigue and glue delamination; achieves 175 °C qualification and stable R_DS(on) over lifetime.
Logic-level drive	R_DS(on) = 1.19 mΩ @ V_GS = 4.5 V - Allows direct interface with microcontroller GPIOs or low-voltage PWM controllers without gate drivers.

Applications

Server Point-of-Load (POL)

Telecom Secondary-Side Sync Rectification

Use Scenario: High-current, high-efficiency 3.3 V/1.8 V/1.2 V power delivery to CPUs, ASICs, and DDR memory in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase buck converters operating at 500 kHz–2 MHz with interleaved PWM timing.

Use Value: 1.19 mΩ R_DS(on) @ 4.5 V and 0.68 K/W R_th(j-mb) enable >95% efficiency at 100+ A per phase while minimizing thermal footprint.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V telecom DC/DC converters for base station power supplies.

IC Role / Device Role / Timing Role: Low-V_F freewheeling device replacing Schottky diodes; driven by transformer-coupled or controller-synchronized gate signals.

Use Value: SchottkyPlus diode behavior (Q_r = 36.7 nC, soft recovery) cuts conduction loss by ~40% vs. discrete Schottky while avoiding leakage-induced standby loss.

GPU/V-Core Voltage Regulator Module (VRM)

Power OR-ing for Redundant Supplies

Use Scenario: Core power delivery to graphics processing units and high-performance SoCs requiring dynamic current slew rates >100 A/µs.

IC Role / Device Role / Timing Role: High-current phase-leg switch in 6–12 phase VRMs with adaptive dead-time control and current sensing.

Use Value: Three-source-pin layout and low parasitic inductance minimize voltage spikes during fast di/dt transients, improving transient response and signal integrity.

Use Scenario: Back-to-back configuration for hot-swappable, fault-isolated 12 V/48 V redundant power inputs in network switches and storage controllers.

IC Role / Device Role / Timing Role: Unidirectional power path switch with fast turn-off to prevent reverse current flow during supply failure or insertion.

Use Value: 190 A avalanche rating and 1762 mJ E_AS withstand inrush and fault currents without clamping circuits, simplifying board-level protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC010N04LS6	40 V V_DS, 1.0 mΩ @ 10 V, but 1.55 mΩ @ 4.5 V; higher Q_G (92 nC); TO-263 package.	Higher voltage margin but lower 4.5 V performance; larger thermal resistance (R_th(j-mb) ≈ 1.1 K/W).	Select when 40 V system margin is required and PCB space allows TO-263; avoid where 4.5 V drive efficiency or thermal density is critical.
Vishay SiR626DP	25 V V_DS, 0.95 mΩ @ 10 V, 1.35 mΩ @ 4.5 V; Q_G = 62 nC; PowerPAK SO-8L package.	Lower Q_G but higher R_DS(on) @ 4.5 V; lacks avalanche rating and SchottkyPlus diode optimization.	Prefer for cost-sensitive, non-avalanche applications where gate drive is stronger (≥5 V) and diode recovery is less critical.

Compared with BSC010N04LS6 and SiR626DP, PSMN1R0-25YLD uniquely combines 1.19 mΩ @ 4.5 V, 190 A avalanche testing, and SchottkyPlus diode behavior - making it optimal for compact, high-frequency, high-reliability 24 V POL and telecom rectification where thermal density and soft switching are design priorities.

Availability

PSMN1R0-25YLD is available at Aetrix Electronics and suitable for server point-of-load (POL) modules, telecom secondary-side synchronous rectification, and GPU voltage regulator modules requiring stable component supply, high-volume traceability, and long-term lifecycle support.

Supply support for PSMN1R0-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability devices for automotive, industrial, and computing applications, with leadership in MOSFETs, logic, and ESD protection.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center and telecom infrastructure - emphasizing low R_DS(on), low Q_G, and robust avalanche capability in compact packages.

FAQ

What is the maximum continuous drain current for PSMN1R0-25YLD under real-world PCB conditions?

The datasheet specifies 240 A at T_mb = 25 °C, but practical current is limited by PCB thermal design. With a 1"² 2 oz Cu thermal pad (per Fig. 5), sustained current drops to ~180 A at T_mb = 100 °C. Derating follows the curve in Fig. 2, and peak pulsed current reaches 1226 A for ≤10 µs.

Does PSMN1R0-25YLD require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 4.5 V drive and typical 2 MHz switching, a 2.2 Ω to 4.7 Ω resistor balances switching speed and EMI. Lower values (≤1 Ω) increase ringing risk due to low gate impedance (1.14 Ω typ) and high di/dt capability.

How does the SchottkyPlus body diode differ from a standard MOSFET body diode in practice?

SchottkyPlus delivers 36.7 nC Q_r, 36.9 ns t_rr, and soft recovery (S = 0.9), reducing voltage overshoot and EMI versus conventional body diodes. Crucially, it maintains <1 µA leakage at 25 °C - unlike true Schottky diodes - preserving light-load efficiency in always-on systems.

Can PSMN1R0-25YLD be used in automotive applications?

No - this part is not AEC-Q101 qualified and is explicitly designated for industrial/computing use per Nexperia's legal disclaimers. It lacks automotive-grade screening, extended temperature validation beyond 175 °C, and failure-in-time (FIT) data required for automotive safety-critical systems.

PSMN1R0-25YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.89mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 71.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5308 pF @ 12 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R0-25YLDX FAQ

1.How can I place an order for PSMN1R0-25YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R0-25YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R0-25YLDX reliable?

The price and inventory of PSMN1R0-25YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R0-25YLDX is usually 5 days.

3.What payment methods are accepted for PSMN1R0-25YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R0-25YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R0-25YLDX?

PSMN1R0-25YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R0-25YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R0-25YLDX?

For technical support, including PSMN1R0-25YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R0-25YLDX requirements.

6.How does Aetrix verify that PSMN1R0-25YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN1R0-25YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R0-25YLDX meets industry standards.

7.What is the process for return or replacement of PSMN1R0-25YLDX?

All PSMN1R0-25YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R0-25YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R0-25YLDX part is unused and in its original packaging.

Return procedure for PSMN1R0-25YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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