Nexperia USA Inc. PSMN1R0-30YLC,115

Overview

PSMN1R0-30YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK56 (SOT669) package, rated for 30 V drain-source voltage, 1.15 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and optimized for 4.5 V gate drive. It delivers 100 A continuous drain current at T_mb = 25 °C and supports high-efficiency synchronous rectification in server power supplies.

For engineers reviewing the PSMN1R0-30YLC datasheet, PSMN1R0-30YLC pinout, PSMN1R0-30YLC application, or PSMN1R0-30YLC equivalent, key selection criteria include its ultra-low Q_G (103.5 nC typ), 0.45 K/W junction-to-mounting-base thermal resistance, 259 mJ unclamped avalanche energy, and LFPAK56 package's low parasitic inductance for high-frequency switching.

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction technology to achieve simultaneous optimization of conduction loss (R_DS(on) = 0.85 mΩ typ at 10 V), switching loss (Q_GD = 14.6 nC typ), and ruggedness (E_AS = 259 mJ). Its gate threshold voltage (V_GS(th) = 1.05–1.95 V) ensures reliable turn-on with standard logic-level drivers.

The device features an integrated source-drain diode with 67 nC recovered charge and 45 ns reverse recovery time, enabling efficient operation in hard-switched and synchronous rectifier topologies. Thermal design is supported by a dedicated mounting base (pin mb) directly connected to the drain, providing a low-impedance heat path with R_th(j-mb) = 0.45 K/W.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a single-ended surface-mounted plastic package with 4 terminals and an exposed mounting base (mb) electrically connected to the drain. Its low-profile design (max height 1.20 mm) and optimized thermal pad enable high-power density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with BSC014N04LS6 and SiR626DP, PSMN1R0-30YLC delivers the lowest R_DS(on) × Q_G figure-of-merit (98 mΩ·nC), highest thermal conductivity via mounting base, and triple-source layout - making it optimal for high-density, high-efficiency 12 V/48 V server and telecom power stages.

Availability

PSMN1R0-30YLC is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, DC-DC converters, and power OR-ing applications requiring stable component supply across multi-year production cycles.

Supply support for PSMN1R0-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume production of discrete, logic, and MOSFET devices with automotive and industrial qualification.

This device belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in datacenter, telecom, and industrial power conversion.

FAQ

What is the maximum continuous drain current for PSMN1R0-30YLC at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 100 A - identical to its rating at 25 °C - due to the LFPAK56 package's robust thermal design and 175 °C junction rating. Derating only begins above 100 °C, reaching 70 A at T_mb = 150 °C per Figure 2 in the datasheet.

Can PSMN1R0-30YLC be used with 3.3 V microcontroller GPIOs without a gate driver?

Yes - its V_GS(th) range (1.05–1.95 V typ) and logic-level enhancement mode allow full turn-on with 3.3 V drive, delivering R_DS(on) ≈ 2.4 mΩ at 150 °C junction temperature. However, for <1 mΩ conduction and <100 ns switching, a 4.5 V or higher gate driver is recommended.

How is the mounting base (mb) electrically connected, and what is its current-carrying capacity?

The mounting base is internally connected to the drain terminal and rated for the full device current - up to 100 A continuous and 1450 A pulsed. It must be soldered to a minimum 100 mm² copper area (2 oz) to achieve the specified 0.45 K/W thermal resistance and prevent solder joint fatigue under thermal cycling.

Does PSMN1R0-30YLC have avalanche capability, and how is it tested?

Yes - it is rated for 259 mJ non-repetitive unclamped avalanche energy (E_AS) at I_D = 100 A, V_sup ≤ 30 V, R_GS = 50 Ω, and T_j(init) = 25 °C per Figure 4. This capability is verified per JEDEC JESD24-11 and ensures robustness against inductive switching faults in OR-ing and motor control applications.