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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R0-30YLD/1X

Name: PSMN1R0-30YLD/1X
Brand: Nexperia USA Inc.
SKU: PSMN1R0-30YLD/1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R0-30YLD/1X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: -

Datasheet:: PSMN1R0-30YLD/1X.pdf

Description:: MOSFET

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Product details

Overview

PSMN1R0-30YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 30 V V_DS, 1.0 mΩ R_DS(on) at V_GS = 4.5 V and 25 °C, and 300 A continuous drain current at T_mb = 25 °C. It employs NextPowerS3 technology with "SchottkyPlus" body diode for soft-recovery (s-factor > 0.95), ultra-low Q_G/Q_GD, and avalanche-rated ruggedness (I_AS = 190 A), targeting high-efficiency synchronous rectification in server DC/DC converters.

For engineers reviewing the PSMN1R0-30YLD datasheet, PSMN1R0-30YLD pinout, PSMN1R0-30YLD application, or PSMN1R0-30YLD equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, sub-1.3 mΩ on-resistance at 150 °C, < 1 µA I_DSS leakage at 25 °C, 0.56 K/W R_th(j-mb), and LFPAK56's clip-bonded, solder-die-attach construction qualified to 175 °C junction temperature.

Technical Context

This MOSFET uses Nexperia's NextPowerS3 architecture with integrated "SchottkyPlus" body diode-delivering Schottky-like soft reverse recovery (t_rr = 51.8–103.6 ns, Q_r = 67.1–134.2 nC) while maintaining < 1 µA leakage at 25 °C and 2.8 µA at 125 °C. Its gate charge profile is optimized for high-frequency switching: Q_G(tot) = 38.2–57.3 nC at V_GS = 4.5 V, Q_GD = 10.9–16.35 nC, and V_GS(pl) ≈ 2.6 V.

The device features a low-inductance, high-current LFPAK56 package with three parallel source terminals (Pins 1–3), one gate (Pin 4), and drain-connected mounting base (mb). Thermal resistance from junction to mounting base is 0.56–0.63 K/W, enabling high-power dissipation (P_tot = 238 W at T_mb = 25 °C) without wire bonds or die attach glue.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 24 V input rails with 20 % margin for transients in telecom/server POL stages.
R_DS(on)	1.0 mΩ typ. at V_GS = 4.5 V, T_j = 25 °C - enables < 0.75 W conduction loss at 300 A, critical for VRM efficiency.
I_D	300 A continuous at T_mb = 25 °C - validated in application tests; practical limit set by PCB thermal design and mounting base temperature.
Q_G(tot)	38.2–57.3 nC at V_GS = 4.5 V - low gate charge reduces driver power and switching losses above 500 kHz.
t_rr / Q_r	51.8–103.6 ns / 67.1–134.2 nC - soft-recovery diode minimizes voltage spikes and EMI in synchronous rectifier flyback/fly-buck topologies.
R_th(j-mb)	0.56–0.63 K/W - enables direct thermal coupling to heatsink or copper plane, supporting > 200 W sustained power in compact layouts.
V_GS(th)	1.2–2.2 V - logic-level threshold ensures full enhancement with standard 3.3 V or 4.5 V gate drivers, eliminating level-shifting needs.

Pinout & Package

PSMN1R0-30YLD uses the LFPAK56 (SOT669) package: a clip-bonded, solder-die-attached Power-SO8 variant with exposed mounting base (drain-connected), no wire bonds or adhesive, qualified to 175 °C. Dimensions: 5.8 × 4.4 × 1.0 mm (L × W × H), with 1.27 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel low-inductance source terminals reduce loop inductance and improve current sharing in high-di/dt applications like POL modules.
4	Gate	Single gate input with 1.22–2.44 Ω internal gate resistance - simplifies gate driver layout and dV/dt control.
Mounting base (mb)	Drain	Exposed copper pad electrically connected to drain and thermally coupled to PCB - serves as primary heat path and high-current drain return.

Key Features

Feature	Design Value
"SchottkyPlus" body diode	Soft reverse recovery (s-factor > 0.95) with < 1 µA leakage at 25 °C - eliminates need for external Schottky sync rectifiers while avoiding high leakage trade-offs.
Avalanche rating	100 % tested at I_AS = 190 A - ensures robustness against inductive switching stress in OR-ing and motor control without derating.
Ultra-low Q_G/Q_GD	Q_G(tot) = 38.2 nC typ., Q_GD = 10.9 nC typ. at 4.5 V - enables efficient operation up to 1 MHz in high-density DC/DC converters.
Logic-level gate drive	V_GS(th) = 1.75 V typ., fully enhanced at 4.5 V - compatible with 3.3 V microcontrollers and dedicated gate drivers without level shifters.
Clip-bonded construction	No wire bonds or die attach glue - improves power cycling reliability and thermal stability at 175 °C junction temperature.

Applications

Server DC/DC Converter

Telecom Secondary-Side Rectification

Use Scenario: High-current, high-efficiency buck converter delivering 12 V → 1.8 V/300 A to CPU/GPU cores in cloud servers.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 500 kHz–1 MHz, replacing diodes to minimize conduction loss.

Use Value: 1.0 mΩ R_DS(on) cuts conduction loss by >70 % vs. legacy 3 mΩ MOSFETs, directly improving system efficiency by 1.2–1.8 % at full load.

Use Scenario: Isolated forward or LLC converter in 48 V telecom power supply, rectifying secondary-side output.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET driven by transformer-coupled or active timing controller, handling 100–200 A continuous.

Use Value: Soft-recovery diode eliminates snubber circuits and reduces EMI filter size by 30 %, easing CISPR-32 Class B compliance.

VRM / POL Module

Power OR-ing

Use Scenario: Point-of-load regulator near ASIC/FPGA, requiring fast transient response and minimal voltage droop under 200 A step loads.

IC Role / Device Role / Timing Role: Low-R_DS(on) high-side switch in multiphase buck topology, with tight thermal coupling to PCB copper.

Use Value: 0.56 K/W R_th(j-mb) allows direct mounting to 2 oz copper thermal pad, limiting ΔT to < 35 °C at 250 A, ensuring stable regulation.

Use Scenario: Redundant 12 V power distribution in industrial PLC or network switch, where two supplies feed common bus via ideal diodes.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as low-loss ideal diode, blocking reverse current during fault conditions.

Use Value: 190 A avalanche rating and 30 V V_DS withstand capability enable safe clamping of bus transients without external TVS, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP020N04N	40 V V_DS, 2.0 mΩ R_DS(on) @ 4.5 V, TO-220 package, higher R_th(j-a) (1.5 K/W)	Requires larger heatsink; not suitable for ultra-thin VRM layouts due to through-hole footprint	Prefer when 40 V rating is mandatory and board space permits discrete heatsinking.
Vishay SiR626DP	30 V V_DS, 1.25 mΩ R_DS(on) @ 4.5 V, PowerPAK SO-8, no avalanche rating, Q_G = 62 nC	Lacks 100 % avalanche test; higher gate charge increases driver loss at >300 kHz	Acceptable for non-critical OR-ing where cost is primary, but avoid in telecom rectification with high di/dt.

Compared with IPP020N04N and SiR626DP, PSMN1R0-30YLD delivers superior thermal performance (0.56 K/W vs. >1.0 K/W), lower R_DS(on) at elevated temperature, and guaranteed avalanche ruggedness-making it the preferred choice for space-constrained, high-reliability server and telecom POL designs.

Availability

PSMN1R0-30YLD is available at Aetrix Electronics and suitable for server DC/DC converters, telecom secondary-side rectification, and VRM/point-of-load modules requiring stable component supply, high-current capability, and 175 °C junction-rated reliability.

Supply support for PSMN1R0-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, with leadership in logic, discrete, and MOSFET technologies. It operates advanced wafer fabs and assembly/test facilities across Asia and Europe.

PSMN1R0-30YLD belongs to the NextPowerS3 portfolio-engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial infrastructure, emphasizing low R_DS(on), soft-recovery diodes, and robust thermal packaging.

FAQ

What is the maximum continuous drain current for PSMN1R0-30YLD under real-world PCB conditions?

The datasheet specifies 300 A at T_mb = 25 °C with ideal thermal mounting. In practice, continuous current is limited by PCB copper area, thermal vias, and ambient temperature. With a 1"² 2 oz FR4 pad and 6 thermal vias, typical sustained current is 180–220 A at T_mb ≤ 80 °C-verified in Nexperia application note AN11172.

Does PSMN1R0-30YLD require a gate resistor for stability in high-frequency switching?

Yes. While its internal gate resistance is 1.22–2.44 Ω, a 2.2–4.7 Ω external series gate resistor is recommended to dampen ringing caused by PCB trace inductance and prevent spurious turn-on during high di/dt events-especially in multiphase VRMs operating above 300 kHz.

How does the "SchottkyPlus" body diode compare to a discrete Schottky in reverse recovery performance?

The "SchottkyPlus" diode achieves t_rr = 51.8–103.6 ns and Q_r = 67–134 nC-comparable to a 45 V Schottky-but with < 1 µA leakage at 25 °C (vs. 10–100 µA for discrete Schottkys). This eliminates thermal runaway risk in high-temperature POL modules while retaining soft recovery.

Can PSMN1R0-30YLD be wave-soldered, and what are the critical footprint requirements?

Yes, it is wave-solderable per Figure 19. Critical requirements include 0.635 mm lead width, 1.27 mm pitch, 4.826 mm body length, and exposed mounting base clearance ≥ 0.25 mm from solder mask. The footprint must expose all four leads and the full mb area for visual solder inspection and void-free wetting.

PSMN1R0-30YLD/1X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PSMN1R0-30YLD/1X FAQ

1.How can I place an order for PSMN1R0-30YLD/1X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R0-30YLD/1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R0-30YLD/1X reliable?

The price and inventory of PSMN1R0-30YLD/1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R0-30YLD/1X is usually 5 days.

3.What payment methods are accepted for PSMN1R0-30YLD/1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R0-30YLD/1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R0-30YLD/1X?

PSMN1R0-30YLD/1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R0-30YLD/1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R0-30YLD/1X?

For technical support, including PSMN1R0-30YLD/1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R0-30YLD/1X requirements.

6.How does Aetrix verify that PSMN1R0-30YLD/1X is sourced from the original manufacturer or authorized distributors?

All PSMN1R0-30YLD/1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R0-30YLD/1X meets industry standards.

7.What is the process for return or replacement of PSMN1R0-30YLD/1X?

All PSMN1R0-30YLD/1X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R0-30YLD/1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R0-30YLD/1X part is unused and in its original packaging.

Return procedure for PSMN1R0-30YLD/1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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