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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R0-30YLEX

Name: PSMN1R0-30YLEX
Brand: Nexperia USA Inc.
SKU: PSMN1R0-30YLEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R0-30YLEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R0-30YLEX.pdf

Description:: PSMN1R0-30YLE/SOT669/LFPAK

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Product details

Overview

PSMN1R0-30YLE from Nexperia is an N-channel 30 V ASFET in LFPAK56 (SOT669) package, optimized for hot-swap, inrush current limiting, and linear-mode operation with enhanced Safe Operating Area (SOA). It delivers 1.1 mΩ R_DS(on) at V_GS = 10 V / T_j = 25 °C, supports 275 A continuous drain current (T_mb = 25 °C), and features copper-clip construction for low parasitic inductance - deployed in 12–20 V e-Fuse and DC load-switch applications.

For engineers reviewing the PSMN1R0-30YLE datasheet, PSMN1R0-30YLE pinout, PSMN1R0-30YLE application, or PSMN1R0-30YLE equivalent, key selection criteria include SOA robustness in linear mode, thermal resistance to mounting base (R_th(j-mb) = 0.37 K/W typ), gate charge profile (Q_G(tot) = 33 nC typ at 4.5 V), and LFPAK56 footprint compatibility with high-current PCB layouts.

Technical Context

This ASFET employs a trench-gate MOSFET structure with copper-clip interconnects to minimize R_DS(on) and package inductance. Its SOA curve is specifically extended for linear-mode operation up to 1303 A peak (tp ≤ 10 µs) and sustained 275 A continuous current under optimized thermal mounting.

The device integrates a robust source-drain diode with soft reverse recovery (S = 0.95) and low V_SD (0.78 V typ at I_S = 25 A), enabling bidirectional current handling in battery protection and hot-swap circuits without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines absolute upper rail voltage for safe operation in 12–20 V systems with margin against transients.
R_DS(on)	0.94–1.11 mΩ at V_GS = 10 V / T_j = 25 °C - enables sub-1 mΩ conduction loss in high-current load switches and e-Fuses.
I_D cont.	275 A at T_mb = 25 °C - validated continuous current capability under ideal thermal mounting, limited by PCB copper area and heatsinking.
Q_G(tot)	33 nC typ at V_GS = 4.5 V - determines gate drive energy and switching speed in fast-turn-on hot-swap controllers.
R_th(j-mb)	0.37 K/W typ - enables efficient heat transfer from die to PCB mounting base, critical for linear-mode thermal stability.
V_GS(th)	1.2–2.2 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.
E_AS	1.5 J non-repetitive avalanche energy - provides single-pulse ruggedness during inductive load interruption or fault events.

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal, single-ended surface-mount plastic package with exposed copper mounting base (drain-connected), optimized for high-current, low-inductance, and high-reliability power switching. Its 30 mm² footprint supports >200 A thermal current capacity when mounted on ≥25.4 mm² 70 µm copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt linear-mode operation.
4	Gate (G)	Single gate input with low RG (3.1 Ω typ) - minimizes Miller-induced oscillation risk during fast switching.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically connected to drain - serves as primary thermal path and high-current return path; requires soldered PCB connection.

Key Features

Feature	Design Value
Enhanced SOA for linear mode	Extended safe operating area validated up to 1303 A peak and 275 A continuous - enables stable operation in active current limiting without thermal runaway.
Low R_DS(on) + copper clip	0.94 mΩ typ R_DS(on) with <1 nH package inductance - reduces I²R losses and voltage overshoot during hot-swap insertion.
High-reliability LFPAK56	Qualified to 175 °C junction temperature and 260 °C peak soldering - supports industrial and telecom equipment with extended lifetime requirements.
Soft-recovery source-drain diode	S = 0.95 softness factor and 34 ns t_rr - suppresses voltage spikes and EMI during reverse recovery in bidirectional load switching.
Low leakage & threshold stability	IDSS < 1 µA at 25 °C; ΔV_GS(th)/ΔT = −3.7 mV/K - ensures predictable turn-on behavior across −55 °C to 150 °C ambient range.

Applications

Hot Swap Power Insertion

e-Fuse Protection

Use Scenario: Controlled insertion of line cards into live backplanes operating at 12–20 V.

IC Role / Device Role / Timing Role: Main power switch regulating inrush current via linear-mode gate bias control during ramp-up.

Use Value: Prevents bus voltage droop and system reset by limiting peak inrush to <50 A while sustaining 200+ A steady-state load.

Use Scenario: Overcurrent protection in server VRMs and PoE PDs where fast trip (<100 µs) and auto-retry are required.

IC Role / Device Role / Timing Role: High-side current-limiting element controlled by external current-sense amplifier and comparator.

Use Value: Enables precise 50–250 A current limiting with <1.5 mΩ sense-path contribution, minimizing power loss and thermal derating.

DC Load Switching

Battery Protection

Use Scenario: Remote ON/OFF control of high-current subsystems (e.g., GPU rails, storage arrays) in data center power distribution.

IC Role / Device Role / Timing Role: Low-loss, high-reliability main switch with integrated SOA margin for transient overloads.

Use Value: Delivers <0.5 W conduction loss at 200 A, eliminating need for parallel FETs and reducing BOM count and layout area.

Use Scenario: Bidirectional current control in 2-cell Li-ion battery packs (8.4 V max) for charge/discharge path isolation and short-circuit cutoff.

IC Role / Device Role / Timing Role: Dual-function switch supporting forward conduction and reverse recovery during cell balancing or fault clearing.

Use Value: Leverages low V_SD (0.78 V) and soft diode recovery to avoid voltage spikes during pack reversal or fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current hot-swap MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP020N04L	40 V rating, 2.0 mΩ R_DS(on), TO-252 package, higher R_th(j-a) (50 K/W)	Limited to lower-current hot-swap due to larger R_DS(on) and inferior SOA in linear mode	Choose only if 40 V headroom is mandatory and thermal design allows higher conduction loss.
Vishay SiR626DP	30 V rating, 1.25 mΩ R_DS(on), PowerPAK SO-8, no copper clip, SOA not specified for linear mode	Unverified linear-mode ruggedness; higher package inductance increases switching overshoot	Acceptable for switched-mode load switching but not recommended for sustained linear-mode e-Fuse operation.

Compared with IPP020N04L and SiR626DP, PSMN1R0-30YLE offers superior linear-mode SOA, lower R_DS(on), and lower R_th(j-mb), making it uniquely suited for high-reliability hot-swap and e-Fuse designs requiring stable current limiting without thermal runaway.

Availability

PSMN1R0-30YLE is available at Aetrix Electronics and suitable for hot-swap power insertion, e-Fuse protection, and DC load switching applications requiring stable component supply, high-current reliability, and linear-mode ruggedness.

Supply support for PSMN1R0-30YLE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

This device belongs to Nexperia's ASFET (Advanced Superjunction FET) product line, engineered specifically for high-efficiency, high-ruggedness power switching in linear and switched-mode hot-swap, e-Fuse, and load-switch applications.

FAQ

What is the maximum continuous drain current for PSMN1R0-30YLE under real-world PCB conditions?

The datasheet specifies 275 A at T_mb = 25 °C with ideal mounting - but practical current is constrained by PCB copper area, thermal vias, and ambient temperature. With ≥25.4 mm² 70 µm copper and 20 thermal vias, 150–180 A continuous is achievable at T_mb ≤ 85 °C. Derating curves in Figure 2 must be applied per actual board thermal design.

Can PSMN1R0-30YLE be used in avalanche mode for clamping?

Yes - it is 100% tested for non-repetitive avalanche with E_AS = 1.5 J (V_sup ≤ 30 V, I_D = 25 A, T_j(init) = 25 °C). However, repetitive avalanche is not rated; use only for single-event fault clamping. Thermal limits and SOA boundaries must be strictly observed during testing.

Does the LFPAK56 package require special soldering profiles?

Yes - the mounting base demands full reflow coverage. The recommended profile uses peak temperature ≤260 °C for ≤30 s, with preheat (150–200 °C), soak (180–200 °C for 60–120 s), and ramp-up (≤3 °C/s) per JEDEC J-STD-020. Incomplete wetting of the mb pad causes thermal failure and premature SOA collapse.

How does the triple-source-pin configuration improve performance?

The three parallel source terminals reduce total source inductance and distribute current more evenly across bond wires, lowering di/dt-induced voltage spikes during fast switching and improving current sharing in linear-mode operation. This directly enhances SOA margin and reduces localized heating at the source interface.

PSMN1R0-30YLEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 275A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.11mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 119 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7389 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 224W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R0-30YLEX FAQ

1.How can I place an order for PSMN1R0-30YLEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R0-30YLEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R0-30YLEX reliable?

The price and inventory of PSMN1R0-30YLEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R0-30YLEX is usually 5 days.

3.What payment methods are accepted for PSMN1R0-30YLEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R0-30YLEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R0-30YLEX?

PSMN1R0-30YLEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R0-30YLEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R0-30YLEX?

For technical support, including PSMN1R0-30YLEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R0-30YLEX requirements.

6.How does Aetrix verify that PSMN1R0-30YLEX is sourced from the original manufacturer or authorized distributors?

All PSMN1R0-30YLEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R0-30YLEX meets industry standards.

7.What is the process for return or replacement of PSMN1R0-30YLEX?

All PSMN1R0-30YLEX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R0-30YLEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R0-30YLEX part is unused and in its original packaging.

Return procedure for PSMN1R0-30YLEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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