Nexperia USA Inc. PSMN1R0-40YLD/2X

Overview

PSMN1R0-40YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT1023) package, rated for 40 V V_DS, 1.1 mΩ R_DS(on) @ 4.5 V V_GS, and 280 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 Schottky-Plus technology for soft-recovery switching, avalanche-rated operation, and optimized 4.5 V gate drive - deployed in high-efficiency server power supplies and synchronous rectification stages.

For engineers reviewing the PSMN1R0-40YLD datasheet, PSMN1R0-40YLD pinout, PSMN1R0-40YLD application, or PSMN1R0-40YLD equivalent, key selection criteria include its 0.56 K/W junction-to-mounting-base thermal resistance, 17 nC Q_GD, Schottky-Plus body diode with 48 ns t_rr, and LFPAK56's exposed mounting base for low-inductance, high-current PCB interconnects.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding, enabling 150 °C junction temperature rating and robust unclamped avalanche performance (190 A I_AS, 2472 mJ E_DS(AL)). Its gate threshold voltage (1.05–2.2 V) and low ΔV_GS(th)/ΔT (−5.1 mV/K) support stable logic-level control across industrial temperature ranges.

The Schottky-Plus body diode delivers soft reverse recovery (t_a = 28.6 ns, t_b = 23.8 ns) without elevated I_DSS leakage - critical for ZVS/ZCS topologies. Dynamic parameters including 59 nC Q_G(tot) @ 4.5 V and 382 pF C_rss are optimized for high-frequency DC-DC converters operating up to 1 MHz.

Key Specifications

Pinout & Package

LFPAK56 (SOT1023) is a 4-lead surface-mount power package with copper-clip construction, solder die attach, and exposed mounting base connected to drain. It features wave-solderable leads, visual solder-joint inspection capability, and low parasitic inductance/resistance for high-current switching.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with IPP020N04L and SiR626DP, PSMN1R0-40YLD delivers lower R_DS(on), faster soft recovery, and superior thermal coupling via LFPAK56 - making it optimal for high-density, high-efficiency 48 V–12 V conversion where board area and thermal headroom are constrained.

Availability

PSMN1R0-40YLD is available at Aetrix Electronics and suitable for server power supply design, synchronous rectification circuits, motor control inverters, and redundant power ORing applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN1R0-40YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in power MOSFETs, ESD protection, and automotive-qualified components.

This device belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and telecom infrastructure - emphasizing low R_DS(on), fast soft switching, and robust thermal packaging.

FAQ

What is the maximum continuous drain current for PSMN1R0-40YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 198 A per Figure 2 of the datasheet. This value reflects thermal limits of the LFPAK56 package and assumes adequate PCB copper area (e.g., 1" square 2 oz copper pad) for heat spreading. Actual current capability depends on system-level thermal design.

Does PSMN1R0-40YLD require a gate resistor for safe operation with a 5 V microcontroller output?

No external gate resistor is required for basic turn-on/turn-off when driven directly from a 5 V GPIO with ≤20 mA drive strength, due to its 1.3 Ω internal gate resistance and 59 nC total gate charge. However, a 2.2–4.7 Ω series resistor is recommended to damp ringing and control dV/dt in high-di/dt layouts.

How is the mounting base (drain) electrically isolated from the PCB during reflow soldering?

The mounting base is not electrically isolated - it is the drain terminal and must be routed to the appropriate high-side or low-side potential. Isolation is achieved through PCB design: the drain pad is placed over a non-plated slot or separated by clearance from other nets. Thermal vias beneath the pad must be tented or filled to prevent solder wicking.

Can PSMN1R0-40YLD replace a standard Schottky diode in a 48 V ORing application?

Yes - when used in back-to-back configuration with an ORing controller, its 0.78 V V_SD and soft 48 ns t_rr provide lower forward drop and negligible reverse-recovery loss compared to 0.55 V Schottky diodes. The result is lower conduction loss at high current and elimination of diode thermal runaway risk.