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Nexperia USA Inc. PSMN1R0-40YSHX
- Part No.:
- PSMN1R0-40YSHX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1023, 4-LFPAK
- Datasheet:
-
PSMN1R0-40YSHX.pdf
- Description:
- MOSFET N-CH 40V 290A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:8,827
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Product details
Overview
PSMN1R0-40YSH from Nexperia is a standard-level N-channel MOSFET optimized for high-current, high-efficiency power switching in server PSUs and motor drives. It delivers 40 V VDS, 1 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, 290 A continuous drain current (Tmb = 25 °C), and operates up to 175 °C junction temperature in the LFPAK56E package. Its NextPower-S3 Schottky-Plus body diode enables soft-recovery synchronous rectification in DC-DC converters.
For engineers reviewing the PSMN1R0-40YSH datasheet, PSMN1R0-40YSH pinout, PSMN1R0-40YSH application, or PSMN1R0-40YSH equivalent, key selection criteria include its 0.33 K/W junction-to-mounting-base thermal resistance, 13 nC typical QGD, avalanche-rated ruggedness (578 mJ unclamped), and LFPAK56E's exposed mounting base for direct thermal coupling - critical for high-power density board designs.
Technical Context
This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding, enabling low parasitic inductance and high current handling. Its Schottky-Plus body diode provides soft reverse recovery (trr = 45 ns, Qr = 53 nC) without elevated IDSS leakage, distinguishing it from conventional silicon diodes or fast-recovery alternatives.
The device is rated for linear-mode operation with strong SOA performance and 100% avalanche testing per unit. Gate threshold voltage is 3.0 V (typ), with -7.4 mV/K temperature coefficient, supporting stable turn-on across automotive-grade thermal ranges despite non-automotive qualification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - sets hard upper limit for bus voltage in 12 V/48 V server and battery systems |
| RDS(on) | 0.85–1.0 mΩ @ VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 250 A, critical for >98 % efficiency in high-current paths |
| ID (cont) | 290 A @ Tmb = 25 °C - validated continuous current under real thermal test conditions, not theoretical |
| QG(tot) | 87–122 nC - determines gate drive power and switching speed in hard-switched topologies like synchronous buck |
| Rth(j-mb) | 0.33–0.45 K/W - enables direct PCB copper pad thermal coupling, reducing heatsink dependency in compact PSU layouts |
| trr | 45 ns - ensures minimal switching loss and EMI during body-diode commutation in synchronous rectifiers |
| EAS | 2710 mJ - quantifies single-pulse avalanche energy handling, supporting robustness against inductive transients in motor control |
Pinout & Package
LFPAK56E (SOT1023) is a 4-lead, single-ended surface-mount package with copper-clip construction, qualified to 175 °C. It features an exposed mounting base (pin 4) electrically connected to drain and thermally coupled to PCB copper, enabling high-reliability wave soldering and visual joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-frequency switching |
| 4 | Mounting Base / Drain (mb/D) | Exposed copper pad tied internally to drain - serves as primary thermal path and high-current return node |
| - | Gate (G) | Single gate terminal (pin not numbered in outline but located between pins 3 and 4 per graphic symbol) |
Key Features
| Feature | Design Value |
|---|---|
| Schottky-Plus body diode | Soft reverse recovery (ta = 25 ns, tb = 20 ns) with 0.77 V forward drop at 25 A, eliminating snubber needs in synchronous rectification |
| NextPower-S3 technology | Reduces QGD/QG ratio - 13 nC QGD vs. 87 nC QG(tot) - improves Miller immunity and dV/dt ruggedness in high-side switching |
| 175 °C qualified LFPAK | Copper-clip + solder die attach withstands sustained thermal cycling in server and industrial environments without delamination |
| Avalanche rating | 100% production-tested unclamped avalanche energy of 578 mJ (ID = 83 A) - supports reliable operation under short-circuit or overload stress |
| Low parasitic inductance | Optimized internal layout minimizes LSD and LGD, reducing voltage overshoot during 1564 A peak pulsed current (IDM) |
Applications
| High-Performance Server PSU | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Primary-side high-side switch and secondary-side synchronous rectifier in 48 V input, 12 V output VRMs for AI accelerators. IC Role / Device Role / Timing Role: Power MOSFET operating in hard-switched or ZVS mode at 300–600 kHz, delivering up to 290 A continuous output current. Use Value: 0.33 K/W Rth(j-mb) allows direct thermal coupling to 70 µm copper pads, reducing thermal margin by 22 °C versus SO-8 equivalents at 250 A. |
Use Scenario: Low-side switch in multiphase buck regulators powering CPU/GPU cores with dynamic load steps exceeding 300 A/µs. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch with fast turn-off (tf = 20 ns) and low QGD to minimize shoot-through risk. Use Value: 13 nC QGD and 4.3 V gate plateau voltage enable precise timing control and reduced gate drive loss versus 20+ nC competitors. |
| Brushless DC Motor Control | Battery Protection eFuse |
|
Use Scenario: Inverter leg switch in 48 V BLDC traction drives for industrial automation, requiring bidirectional current handling and fault tolerance. IC Role / Device Role / Timing Role: N-channel power switch in 3-phase bridge, conducting 277 A continuous at Tmb = 100 °C with linear-mode SOA support. Use Value: Strong linear-mode rating and 1564 A pulsed current capability allow safe operation during stall or regenerative braking without desaturation protection. |
Use Scenario: Load switch in 12–48 V battery management systems, performing overcurrent and short-circuit protection with <100 µs response. IC Role / Device Role / Timing Role: eFuse element with integrated current sensing via RDS(on) monitoring and fast turn-off (td(off) = 50 ns). Use Value: 1 mΩ on-resistance enables accurate ±2 % current measurement at 200 A while dissipating only 40 W - enabling compact, fanless BMS designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP020N04L | 40 V, 2.0 mΩ RDS(on), TO-252 package, 120 A ID, no Schottky-Plus diode | Limited to ≤120 A continuous; higher conduction loss; requires external snubber for diode recovery | Choose when cost sensitivity outweighs current density and EMI requirements |
| Vishay SiR626DP | 40 V, 0.95 mΩ RDS(on), PowerPAK SO-8L, 240 A ID, standard body diode (trr = 75 ns) | Lower max current; slower diode recovery increases switching loss by ~35 % in synchronous rectification | Choose when footprint compatibility with SO-8L is mandatory and thermal budget permits higher Rth(j-a) |
Compared with IPP020N04L and SiR626DP, PSMN1R0-40YSH uniquely combines 290 A rating, sub-1 mΩ on-resistance, and Schottky-Plus soft-recovery in a 175 °C-qualified LFPAK56E - making it optimal for space-constrained, high-efficiency server and motor control where thermal headroom and EMI are limiting factors.
Availability
PSMN1R0-40YSH is available at Aetrix Electronics and suitable for high-performance server power supplies, brushless DC motor inverters, battery protection eFuses, and high-current synchronous rectifiers requiring stable component supply and long-term lifecycle continuity.
Supply support for PSMN1R0-40YSH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components.
This part belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and computing applications where thermal performance and switching integrity are critical.
FAQ
What is the maximum continuous drain current at 100 °C mounting base temperature?
The datasheet specifies 277 A continuous drain current at Tmb = 100 °C and VGS = 10 V. This value is derived from derating curves (Figure 2) and reflects real-world thermal limits when mounted on a 25.4 mm × 25.4 mm, 70 µm copper pad on FR4. It assumes adequate PCB copper area and airflow.
Does PSMN1R0-40YSH support gate drive with 5 V logic?
No - the gate threshold voltage is 2.4–3.6 V (typ 3.0 V), but full enhancement requires ≥10 V for specified RDS(on). At VGS = 5 V, RDS(on) rises to ~2.5 mΩ (per Figure 8), increasing conduction loss by >150 %. Standard-level drive mandates 10–15 V gate bias for optimal performance.
How is the mounting base (pin 4) electrically connected internally?
Pin 4 is the exposed mounting base, directly bonded to the MOSFET's drain region via copper clip and solder die attach. It is not isolated - it carries full drain potential and serves as the primary thermal and current return path. PCB layout must treat it as a high-current, high-voltage node.
Is this device qualified for automotive applications?
No - the datasheet explicitly states "Non-automotive qualified products" in Section 13. It is not AEC-Q101 qualified, lacks automotive-specific reliability testing (e.g., HTOL, TC), and is intended for industrial, computing, and telecom applications only. Automotive use requires formal qualification and validation by the customer.
PSMN1R0-40YSHX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1023, 4-LFPAK
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 290A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 122 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9433 pF @ 20 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 333W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56; Power-SO8
PSMN1R0-40YSHX FAQ
1.How can I place an order for PSMN1R0-40YSHX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R0-40YSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R0-40YSHX reliable?
The price and inventory of PSMN1R0-40YSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R0-40YSHX is usually 5 days.
3.What payment methods are accepted for PSMN1R0-40YSHX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R0-40YSHX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R0-40YSHX?
PSMN1R0-40YSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R0-40YSHX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R0-40YSHX?
For technical support, including PSMN1R0-40YSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R0-40YSHX requirements.
6.How does Aetrix verify that PSMN1R0-40YSHX is sourced from the original manufacturer or authorized distributors?
All PSMN1R0-40YSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R0-40YSHX meets industry standards.
7.What is the process for return or replacement of PSMN1R0-40YSHX?
All PSMN1R0-40YSHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R0-40YSHX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R0-40YSHX part is unused and in its original packaging.
Return procedure for PSMN1R0-40YSHX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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