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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R1-25YLC,115

Name: PSMN1R1-25YLC,115
Brand: Nexperia USA Inc.
SKU: PSMN1R1-25YLC,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R1-25YLC,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R1-25YLC,115.pdf

Description:: MOSFET N-CH 25V 100A LFPAK56

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Product details

Overview

PSMN1R1-25YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, optimized for 4.5 V gate drive using NextPower Superjunction technology. It delivers 1.15 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, supports 100 A continuous drain current at T_mb = 25 °C, and operates up to 175 °C junction temperature - enabling high-efficiency synchronous rectification and load switching in server power supplies.

For engineers reviewing the PSMN1R1-25YLC datasheet, PSMN1R1-25YLC pinout, PSMN1R1-25YLC application, or PSMN1R1-25YLC equivalent, key selection criteria include its ultra-low Q_G (39 nC @ 4.5 V), low parasitic inductance, 25 V V_DS rating, and qualification to 175 °C for industrial-grade thermal reliability.

Technical Context

This MOSFET employs NextPower Superjunction architecture to minimize conduction and switching losses simultaneously. Its R_DS(on) of 1.2 mΩ (typ.) at V_GS = 4.5 V and 25 °C enables efficient operation with standard logic-level drivers, while ultra-low Q_GD (11 nC) and Q_OSS (22.6 nC) reduce switching energy and improve hard-switching performance.

The device features an integrated source-drain diode with 43 ns reverse recovery time and 42 nC recovered charge, supporting high-frequency synchronous rectification. Thermal resistance from junction to mounting base is 0.58 K/W (typ.), enabling high-power density designs when mounted on thermally optimized PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in DC-DC converters.
R_DS(on)	0.95–1.15 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 100 A, critical for high-current power OR-ing.
Q_G(tot)	39 nC @ V_GS = 4.5 V - Low gate charge reduces driver power demand and improves efficiency in 500 kHz+ switching applications.
I_D	100 A continuous @ T_mb = 25 °C - Supports high-current load switching without external heatsinking in compact layouts.
T_j(max)	175 °C - Qualified for extended thermal operation in industrial and communications equipment with limited airflow.
R_th(j-mb)	0.58 K/W (typ.) - Enables >150 W power dissipation with ≤100 K rise above mounting base temperature.
V_GS(th)	1.05–1.95 V @ I_D = 1 mA - Ensures reliable turn-on with 3.3 V or 5 V logic controllers without level-shifting.

Pinout & Package

LFPAK (SOT669) is a 4-lead plastic single-ended surface-mounted package with exposed mounting base connected to drain. It provides low-inductance, high-current routing and superior thermal transfer versus SO-8.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with 1.1 Ω typical gate resistance - simplifies gate driver design and damping requirements.
Mounting base (mb)	Drain (D)	Exposed copper drain pad soldered directly to PCB thermal plane - primary heat path and high-current return path.

Key Features

Feature	Design Value
NextPower Superjunction technology	Enables simultaneous ultra-low R_DS(on) and Q_G, reducing both conduction and switching losses in high-frequency SMPS.
Optimized for 4.5 V gate drive	Guarantees full enhancement with standard microcontroller GPIO or low-voltage PWM controllers - no external level shifter needed.
Ultra-low Q_GD and Q_OSS	11 nC Q_GD and 22.6 nC Q_OSS minimize Miller effect and output energy loss - critical for ZVS/ZCS topologies.
175 °C qualified Power-SO8 package	Validated for long-term operation at elevated temperatures - eliminates derating concerns in sealed industrial enclosures.
Low parasitic inductance layout	Three-source-pin configuration and drain-connected mounting base reduce loop inductance by >30% vs. standard SO-8.

Applications

DC-DC Converters

Lithium-ion Battery Protection

Use Scenario: High-current buck converter in telecom power shelf delivering 50 A at 12 V output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95%.

Use Value: 1.15 mΩ R_DS(on) cuts rectifier loss to <0.7 W at 50 A, enabling smaller heatsinks and higher power density.

Use Scenario: Primary protection FET in multi-cell Li-ion pack management system with overcurrent cutoff.

IC Role / Device Role / Timing Role: High-side load switch controlled by battery monitor IC to disconnect pack during fault conditions.

Use Value: 100 A rated current and 175 °C T_j(max) ensure robust response to short-circuit events without thermal runaway.

Power OR-ing

Server Power Supplies

Use Scenario: Redundant 48 V input OR-ing circuit in enterprise server PSU with dual AC inputs.

IC Role / Device Role / Timing Role: Back-to-back N-channel MOSFET pair implementing low-loss, fast-turnoff OR-ing function.

Use Value: Ultra-low Q_G (39 nC) enables sub-100 ns turn-off delay - preventing reverse current flow during input switchover.

Use Scenario: 24 V intermediate bus converter supplying CPU VRMs in cloud data center servers.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck controller's power stage, operating at 600 kHz.

Use Value: 0.58 K/W R_th(j-mb) allows direct thermal coupling to VRM heatsink - sustaining 85 °C case temp under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 4.5 V; Q_G = 42 nC; TO-220 package; 55 V rating	Higher R_DS(on) increases conduction loss by ~3.5×; larger footprint and inferior thermal resistance (1.5 K/W).	Select only if 55 V rating is required and board space permits TO-220 mounting.
DMTH10H025LPS-13	R_DS(on) = 1.3 mΩ @ 4.5 V; Q_G = 48 nC; PowerDI5060 package; 25 V rating	Higher Q_G increases switching loss; no three-source-pin configuration - higher package inductance.	Preferable only if PowerDI5060 footprint compatibility is mandatory and gate drive strength exceeds 2 A peak.

Compared with IRL1404ZPBF and DMTH10H025LPS-13, PSMN1R1-25YLC offers the lowest combined conduction-switching loss due to its 1.15 mΩ/39 nC balance and three-source-pin LFPAK layout - making it optimal for high-current, high-frequency server and telecom power stages where thermal and EMI constraints are tight.

Availability

PSMN1R1-25YLC is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, DC-DC converters, and power OR-ing applications requiring stable component supply across industrial and communications equipment lifecycles.

Supply support for PSMN1R1-25YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This device belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-current switching in 24–48 V power systems such as data center PSUs and industrial DC distribution.

FAQ

What is the maximum continuous drain current for PSMN1R1-25YLC at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 100 A per Figure 1 in the datasheet - identical to its rating at 25 °C because the limiting factor is package thermal capacity, not silicon current density. This reflects the robustness of the LFPAK construction and its low R_th(j-mb).

Does PSMN1R1-25YLC require a gate resistor for stability in high-speed switching?

Yes - a 4.7 Ω external gate resistor is recommended (per Figure 14 test conditions) to damp ringing caused by interaction between its 1.1 Ω intrinsic gate resistance and PCB trace inductance. Omitting it risks overshoot exceeding ±20 V V_GS limits during 100 A/ns edge rates.

Can PSMN1R1-25YLC be used in avalanche mode for unclamped inductive switching?

Yes - it is rated for 253 mJ non-repetitive drain-source avalanche energy (E_DS(AL)S) at T_j(init) = 25 °C, ID = 100 A, and V_sup ≤25 V. This capability supports robustness in motor drive freewheeling and relay snubbing, provided single-pulse conditions are strictly observed.

How does the three-source-pin configuration impact PCB layout compared to standard SO-8 MOSFETs?

The three-source pins (pins 1–3) must be routed with equal-length, wide copper pours to ensure balanced current division and minimize asymmetrical heating. Unlike standard SO-8, this configuration reduces source loop inductance by 35% - critical for minimizing voltage spikes in >100 A switching nodes.

PSMN1R1-25YLC,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.15mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 1.95V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5287 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 215W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R1-25YLC,115 FAQ

1.How can I place an order for PSMN1R1-25YLC,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R1-25YLC,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R1-25YLC,115 reliable?

The price and inventory of PSMN1R1-25YLC,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R1-25YLC,115 is usually 5 days.

3.What payment methods are accepted for PSMN1R1-25YLC,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R1-25YLC,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R1-25YLC,115?

PSMN1R1-25YLC,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R1-25YLC,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R1-25YLC,115?

For technical support, including PSMN1R1-25YLC,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R1-25YLC,115 requirements.

6.How does Aetrix verify that PSMN1R1-25YLC,115 is sourced from the original manufacturer or authorized distributors?

All PSMN1R1-25YLC,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R1-25YLC,115 meets industry standards.

7.What is the process for return or replacement of PSMN1R1-25YLC,115?

All PSMN1R1-25YLC,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R1-25YLC,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R1-25YLC,115 part is unused and in its original packaging.

Return procedure for PSMN1R1-25YLC,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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