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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R1-30EL,127

Name: PSMN1R1-30EL,127
Brand: Nexperia USA Inc.
SKU: PSMN1R1-30EL,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R1-30EL,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: PSMN1R1-30EL,127.pdf

Description:: MOSFET N-CH 30V 120A I2PAK

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Product details

Overview

PSMN1R1-30EL from Nexperia is a logic-level N-channel MOSFET in I2PAK (SOT226) package, rated for 30 V drain-source voltage, 1.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 120 A continuous drain current at T_mb = 25 °C and supports high-efficiency power switching in server PSUs and motor control circuits.

For engineers reviewing the PSMN1R1-30EL datasheet, PSMN1R1-30EL pinout, PSMN1R1-30EL application, or PSMN1R1-30EL equivalent, key selection criteria include its low 1.3 mΩ on-resistance at 10 V gate drive, 338 W total power dissipation capability, avalanche ruggedness (1.9 J), thermal resistance to mounting base (0.22 K/W typ), and compatibility with standard logic-level controllers without level-shifting.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and fast switching, with gate threshold voltage (V_GS(th)) ranging from 1.3 V to 2.15 V at 25 °C and stable down to 0.5 V at 175 °C. Its dynamic characteristics include 118 nC total gate charge and 37 nC gate-drain charge under V_GS = 4.5 V, enabling efficient operation in hard-switched topologies.

The device integrates an intrinsic body diode with 0.8–1.2 V forward voltage at 25 A and 67 ns reverse recovery time, supporting synchronous rectification and freewheeling in DC-DC converters. Thermal design is anchored to the mounting base (connected to drain), with R_th(j-mb) of 0.22 K/W typical, allowing direct heatsink attachment for high-power density layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V industrial bus systems and 12 V/48 V server rails.
R_DS(on)	1.3 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 60 A, critical for high-current load switching.
I_D	120 A @ T_mb = 25 °C - Continuous current rating limited by I2PAK package thermal capacity, not silicon.
E_AS	1.9 J - Non-repetitive avalanche energy supports robustness against inductive turn-off transients in motor drives.
R_th(j-mb)	0.22 K/W typ - Low thermal resistance enables efficient heat transfer to heatsink, essential for sustained 100+ A operation.
Q_G(tot)	118 nC @ V_GS = 4.5 V - Gate charge optimized for fast switching with standard 5 V logic drivers, reducing driver loss.
V_GS(th)	1.3–2.15 V @ T_j = 25 °C - Logic-level threshold ensures full enhancement with 3.3 V or 5 V microcontroller outputs.

Pinout & Package

I2PAK (SOT226) plastic single-ended package with isolated mounting base electrically connected to the drain terminal. Package dimensions: 15.0 × 10.3 × 4.5 mm (L × W × H), with 2.54 mm lead pitch and 3.30 mm lead length.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control input; accepts 0–20 V gate-source voltage; requires ≤100 nA leakage current handling.
2	D (Drain)	Main power output node; internally bonded to mounting base for low-inductance heatsinking.
3	S (Source)	Power return path; referenced to gate drive ground; carries full load current and body diode conduction.
mb	Mounting Base	Electrically tied to drain; provides primary thermal path to heatsink; must be insulated from PCB if chassis-ground isolation required.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate driver ICs in 3.3 V/5 V control systems.
High-temperature qualification	Rated for continuous operation up to 175 °C junction temperature, suitable for sealed industrial enclosures.
Low R_DS(on) vs. temperature stability	R_DS(on) increases only 2.1× from 25 °C to 175 °C, maintaining predictable conduction loss across thermal range.
Avalanche-rated construction	Guaranteed 1.9 J unclamped inductive switching energy, enabling reliable operation without external snubbers in motor control.
Optimized body diode	67 ns t_rr and 123 nC Q_r support efficient freewheeling in synchronous buck converters with minimal voltage overshoot.

Applications

Server Power Supplies

Industrial Motor Control

Use Scenario: Primary-side synchronous rectification and OR-ing in 48 V intermediate bus converters for AI accelerators.

IC Role / Device Role / Timing Role: High-current, low-loss power switch operating at 200–500 kHz with tight duty-cycle control.

Use Value: 1.3 mΩ R_DS(on) reduces conduction loss by >40% versus 2.5 mΩ alternatives, improving system efficiency from 94.2% to 95.1% at 100 A.

Use Scenario: Half-bridge leg in 3-phase BLDC motor inverters for HVAC compressors and factory automation actuators.

IC Role / Device Role / Timing Role: High-current switching element handling 80–120 A peak phase current with fast 115 ns fall time.

Use Value: 118 nC Q_G(tot) and 37 nC Q_GD enable clean 50 ns dead-time control, minimizing shoot-through risk at 20 kHz PWM.

DC-DC Converters

Load Switching

Use Scenario: Output stage switch in 12 V → 1.2 V point-of-load (PoL) converters for FPGA and ASIC core supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier conducting up to 120 A with minimal voltage drop during high di/dt transitions.

Use Value: 0.8–1.2 V V_SD body diode forward voltage and 67 ns t_rr reduce reverse recovery loss by 35% compared to discrete Schottky solutions.

Use Scenario: Hot-swap and inrush current limiting in telecom line cards and industrial PLC backplanes.

IC Role / Device Role / Timing Role: High-side load switch managing 100 A steady-state current with controlled turn-on slew rate.

Use Value: 175 °C T_j rating and 338 W P_tot allow sustained operation under fault conditions without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; 160 A I_D; TO-220 package; no 175 °C rating	Higher conduction loss limits use in high-efficiency server PSUs; unsuitable for sealed high-temp enclosures	Select only when cost sensitivity outweighs efficiency and thermal requirements.
STP120N3LLH6	R_DS(on) = 1.2 mΩ @ 10 V; 120 A I_D; TO-220FP package; 175 °C rated; higher Q_G (145 nC)	Slower switching due to higher gate charge increases driver loss in high-frequency DC-DC designs	Prefer for thermally constrained but lower-frequency motor control where conduction loss dominates.

Compared with IRF1404PBF and STP120N3LLH6, PSMN1R1-30EL offers the lowest R_DS(on) among logic-level 30 V devices in I2PAK, combined with industry-leading thermal resistance (0.22 K/W) and guaranteed avalanche energy-making it optimal for space-constrained, high-current, high-temperature applications where both efficiency and ruggedness are critical.

Availability

PSMN1R1-30EL is available at Aetrix Electronics and suitable for server power supplies, industrial motor control systems, and high-current DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for PSMN1R1-30EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions, with leadership in automotive-grade and industrial power semiconductors.

This device belongs to Nexperia's logic-level TrenchMOS family, engineered specifically for high-current, high-efficiency switching in industrial and computing power systems where low R_DS(on), thermal robustness, and avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current for PSMN1R1-30EL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 120 A per Figure 2 in the datasheet. This reflects package-limited current capacity rather than silicon limitation, and assumes proper heatsinking with low thermal interface resistance.

Can PSMN1R1-30EL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes-the device has a V_GS(th) as low as 1.3 V and achieves R_DS(on) ≤ 1.6 mΩ at V_GS = 4.5 V, enabling full enhancement with 3.3 V logic. However, switching speed will be reduced due to lower gate drive strength; for >100 kHz operation, a dedicated driver is recommended.

Is the mounting base electrically isolated from the drain terminal?

No-the mounting base (mb) is internally connected to the drain terminal, as confirmed in Table 2 (Pinning information) and Figure 18 (Package outline). Electrical isolation requires insulating hardware (e.g., ceramic washer) between the base and heatsink.

What is the safe operating area (SOA) limitation at DC and 10 ms pulse widths?

Per Figure 3, the SOA is limited by R_DS(on) at DC (≤30 V, ≤120 A) and by thermal constraints at 10 ms (≤30 V, ≤300 A). Peak pulsed current reaches 1609 A at 10 µs, but DC operation must stay within the package-limited 120 A envelope.

PSMN1R1-30EL,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 243 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14850 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 338W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

PSMN1R1-30EL,127 FAQ

1.How can I place an order for PSMN1R1-30EL,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R1-30EL,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R1-30EL,127 reliable?

The price and inventory of PSMN1R1-30EL,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R1-30EL,127 is usually 5 days.

3.What payment methods are accepted for PSMN1R1-30EL,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R1-30EL,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R1-30EL,127?

PSMN1R1-30EL,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R1-30EL,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R1-30EL,127?

For technical support, including PSMN1R1-30EL,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R1-30EL,127 requirements.

6.How does Aetrix verify that PSMN1R1-30EL,127 is sourced from the original manufacturer or authorized distributors?

All PSMN1R1-30EL,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R1-30EL,127 meets industry standards.

7.What is the process for return or replacement of PSMN1R1-30EL,127?

All PSMN1R1-30EL,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R1-30EL,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R1-30EL,127 part is unused and in its original packaging.

Return procedure for PSMN1R1-30EL,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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