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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R1-30YLEX

Name: PSMN1R1-30YLEX
Brand: Nexperia USA Inc.
SKU: PSMN1R1-30YLEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R1-30YLEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R1-30YLEX.pdf

Description:: PSMN1R1-30YLE/SOT669/LFPAK

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Product details

Overview

PSMN1R1-30YLE from Nexperia is an N-channel 30 V ASFET in LFPAK56 (SOT669) package, optimized for hot-swap, inrush current limiting, and linear-mode operation with enhanced Safe Operating Area (SOA). It delivers 1.01 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, supports 265 A continuous drain current at T_mb = 25 °C, and features copper-clip construction for low parasitic inductance - deployed in 12–20 V e-Fuse and DC load-switch applications.

For engineers reviewing the PSMN1R1-30YLE datasheet, PSMN1R1-30YLE pinout, PSMN1R1-30YLE application, or PSMN1R1-30YLE equivalent, key selection criteria include SOA robustness in linear mode, thermal resistance to mounting base (R_th(j-mb) = 0.38 K/W typ), gate charge profile (Q_G(tot) = 28 nC typ at 10 V), and LFPAK56 footprint compatibility with high-current PCB layouts.

Technical Context

This ASFET employs a trench-gate MOSFET structure with copper-clip interconnect and optimized cell layout to maximize SOA in linear conduction - enabling stable operation under high V_DS/I_D stress during hot-swap inrush. Its gate threshold voltage (V_GS(th) = 1.87 V typ) and low ΔV_GS(th)/ΔT (−3.7 mV/K) support predictable turn-on across temperature.

The device integrates a source-drain diode with soft reverse recovery (S = 1) and low V_SD (0.79 V typ at I_S = 25 A), reducing switching losses and EMI in bidirectional load-switch configurations. Thermal design leverages direct die-to-mounting-base conduction via the exposed drain pad (mb), achieving R_th(j-mb) as low as 0.38 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines absolute upper limit for drain-source blocking in 12–20 V system rails.
R_DS(on)	1.01 mΩ typ at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 30 A, critical for high-efficiency e-Fuse designs.
I_D cont.	265 A at T_mb = 25 °C - validated continuous current capability under ideal board-level cooling, not limited by silicon alone.
Q_G(tot)	28 nC typ at V_GS = 10 V - determines gate drive energy and switching speed in fast-turn-on hot-swap controllers.
R_th(j-mb)	0.38 K/W typ - enables >150 W power dissipation with <60 K rise from junction to heatsink, supporting compact thermal solutions.
V_GS(th)	1.87 V typ - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers without level-shifting.
E_AS	1 J non-repetitive avalanche energy - provides single-event ruggedness against inductive kickback in DC switch applications.

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount package with an exposed copper mounting base (drain-connected), optimized for high-current, low-inductance, and high-thermal-performance applications. Its 30 mm² footprint balances PCB area efficiency with thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with low RG (3 Ω typ) - minimizes gate oscillation risk and simplifies driver interface.
mb	Mounting Base (Drain)	Exposed copper pad electrically connected to drain - serves as primary thermal path and high-current return node.

Key Features

Feature	Design Value
Enhanced SOA for linear-mode operation	Validated safe conduction up to 15 V × 100 A (1.5 kW) in DC bias tests - enables robust hot-swap inrush limiting without thermal runaway.
Copper-clip interconnect	Reduces package inductance to <1.5 nH and lowers R_DS(on) contribution from interconnect - improves switching fidelity and thermal response.
Low leakage current	IDSS < 1 µA at 24 V, 25 °C - minimizes standby power loss in always-on battery protection circuits.
High-temperature qualification	175 °C junction rating and 260 °C peak soldering tolerance - supports industrial and extended-temperature deployment with long-term reliability.
Soft source-drain diode	S = 1 reverse recovery softness factor - suppresses voltage overshoot and EMI during body-diode commutation in bidirectional switches.

Applications

Hot-Swap Power Insertion

e-Fuse Protection

Use Scenario: Controlled insertion of line cards into live 12–20 V backplanes without supply rail disturbance.

IC Role / Device Role / Timing Role: Main power FET operating in linear mode to ramp load current over 1–10 ms while clamping inrush dv/dt.

Use Value: SOA-optimized conduction prevents thermal failure during sustained 50–100 A inrush, eliminating need for external current-sense amplifiers in basic implementations.

Use Scenario: Overcurrent shutdown in server VRMs or PoE injectors upon short-circuit detection.

IC Role / Device Role / Timing Role: High-side load switch activated by external controller to disconnect faulted downstream loads within <100 µs.

Use Value: 265 A continuous rating and 1142 A pulsed capability allow single-device coverage across 12–24 V systems up to 3 kW, reducing BOM count.

DC Load Switching

Battery Protection

Use Scenario: Remote on/off control of high-current subsystems (e.g., motor drives, lighting arrays) in industrial PLCs.

IC Role / Device Role / Timing Role: Low-R_DS(on) main switch placed between battery or PSU and load, driven by microcontroller GPIO.

Use Value: 1.01 mΩ R_DS(on) limits conduction loss to <0.9 W at 30 A - avoids heatsinking in space-constrained enclosures.

Use Scenario: Secondary overcurrent and overtemperature protection in Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: Bidirectional current path with integrated body diode used for charge/discharge control and reverse-polarity blocking.

Use Value: Soft-recovery diode (S = 1) and low V_SD (0.79 V) minimize heat generation during charging cycles, extending pack lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel hot-swap MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V rating, 1.4 mΩ R_DS(on), PG-TDSON-8 package (larger footprint, higher R_th(j-a))	Higher voltage margin but lower SOA robustness in linear mode; less suitable for sustained inrush limiting.	Prefer when system requires >30 V headroom or legacy TO-252-compatible layout.
Vishay SiR626DP	30 V rating, 1.25 mΩ R_DS(on), PowerPAK SO-8L package; Q_G(tot) = 42 nC (higher than PSMN1R1-30YLE's 28 nC)	Slower switching due to higher gate charge; SOA data not published for linear-mode use.	Acceptable where gate drive strength is ample and SOA validation is not required.

Compared with BSC014N04LS6 and SiR626DP, PSMN1R1-30YLE uniquely combines 30 V rating, sub-1.1 mΩ R_DS(on), industry-leading SOA validation, and LFPAK56's low-inductance 4-pin layout - making it the only option qualified for unassisted linear-mode hot-swap in 12–20 V systems.

Availability

PSMN1R1-30YLE is available at Aetrix Electronics and suitable for hot-swap power insertion, e-Fuse protection, and DC load switching requiring stable component supply, high-current reliability, and industrial-temperature operation.

Supply support for PSMN1R1-30YLE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, serving automotive, industrial, and computing markets with ISO/TS 16949-certified manufacturing.

PSMN1R1-30YLE belongs to Nexperia's ASFET (Advanced Superjunction FET) product line, engineered specifically for high-stress linear-mode applications such as hot-swap, inrush limiting, and precision load switching - prioritizing SOA integrity over raw switching speed.

FAQ

What is the maximum continuous drain current for PSMN1R1-30YLE under real-world PCB conditions?

The datasheet specifies 265 A at T_mb = 25 °C, but practical current is constrained by PCB copper area, thermal vias, and ambient temperature. With a 25.4 mm² 70 µm copper pad per Fig. 5, sustained currents above 120 A require active heatsinking or forced airflow to maintain T_j ≤ 150 °C.

Does PSMN1R1-30YLE support gate drive from a 3.3 V microcontroller directly?

No - its V_GS(th) min is 1.2 V, but R_DS(on) rises sharply below V_GS = 4.5 V (1.28 mΩ typ at 7 V vs. 1.8 mΩ max at 7 V). For full enhancement and low-loss operation, a 5 V or 10 V gate driver is required; 3.3 V logic can only achieve partial turn-on with excessive conduction loss.

How is the mounting base (mb) terminal electrically connected internally?

The mounting base is directly bonded to the MOSFET's drain region via copper clip - it is not isolated and must be treated as a high-current, high-voltage node. PCB layout must ensure mb is routed to the system ground plane or supply rail with low-impedance copper and no isolation gaps.

Can PSMN1R1-30YLE replace older SOT-223 or DPAK hot-swap FETs without layout changes?

No - LFPAK56 (SOT669) has a unique 4-pin, dual-source layout and exposed drain pad incompatible with SOT-223 or DPAK footprints. A new PCB layout is required to accommodate its 5.8 × 4.1 mm outline, thermal pad, and pin 1–3 source configuration.

PSMN1R1-30YLEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 265A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.26mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6317 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R1-30YLEX FAQ

1.How can I place an order for PSMN1R1-30YLEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R1-30YLEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R1-30YLEX reliable?

The price and inventory of PSMN1R1-30YLEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R1-30YLEX is usually 5 days.

3.What payment methods are accepted for PSMN1R1-30YLEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R1-30YLEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R1-30YLEX?

PSMN1R1-30YLEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R1-30YLEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R1-30YLEX?

For technical support, including PSMN1R1-30YLEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R1-30YLEX requirements.

6.How does Aetrix verify that PSMN1R1-30YLEX is sourced from the original manufacturer or authorized distributors?

All PSMN1R1-30YLEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R1-30YLEX meets industry standards.

7.What is the process for return or replacement of PSMN1R1-30YLEX?

All PSMN1R1-30YLEX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R1-30YLEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R1-30YLEX part is unused and in its original packaging.

Return procedure for PSMN1R1-30YLEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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