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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R2-25YL,115

Name: PSMN1R2-25YL,115
Brand: Nexperia USA Inc.
SKU: PSMN1R2-25YL,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R2-25YL,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1023, 4-LFPAK

Datasheet:: PSMN1R2-25YL,115.pdf

Description:: MOSFET N-CH 25V 100A LFPAK56

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Product details

Overview

PSMN1R2-25YL from Nexperia is a logic-level N-channel MOSFET in LFPAK2 (SOT1023) package, rated for 25 V V_DS, 1.2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 100 A continuous drain current at T_mb = 25 °C, and qualified to 150 °C junction temperature - deployed in high-current load switching and server power supply rails.

For engineers reviewing the PSMN1R2-25YL datasheet, PSMN1R2-25YL pinout, PSMN1R2-25YL application, or PSMN1R2-25YL equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, avalanche energy rating (677 mJ), thermal resistance (R_th(j-mb) = 0.4 K/W), and LFPAK2 mechanical robustness for high-power density PCB layouts.

Technical Context

This MOSFET uses Nexperia's Advanced TrenchMOS technology to achieve ultra-low on-resistance and gate charge - enabling high-efficiency operation in synchronous rectification and high-frequency DC-DC converters. Its logic-level gate threshold (V_GS(th) = 1.3–2.15 V typ.) ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs.

The device features an integrated source-drain diode with 52 ns reverse recovery time and 66 nC recovered charge, supporting fast commutation in motor control and battery protection circuits. Thermal design is enabled by direct die-to-mounting-base conduction path (R_th(j-mb) = 0.4 K/W typ.), making it suitable for thermally constrained industrial power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 24 V system rail protection and Li-ion battery stack switching
R_DS(on)	0.9–1.2 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 100 A, critical for server PSU efficiency
I_D	100 A continuous @ T_mb = 25 °C - Limited by LFPAK2 package thermal capability, not silicon
E_AS	677 mJ non-repetitive avalanche energy - Supports unclamped inductive switching in motor drives without external snubbers
Q_G(tot)	50.6 nC @ V_GS = 4.5 V - Low gate drive power requirement for 3.3 V logic control in compact power stages
R_th(j-mb)	0.4 K/W typ. - Enables >100 W dissipation with modest heatsinking, reducing need for large copper areas
V_GS(th)	1.3–2.15 V @ T_j = 25 °C - Ensures reliable turn-on with standard logic-level drivers across temperature

Pinout & Package

PSMN1R2-25YL is housed in the LFPAK2 (SOT1023) surface-mount package - a reinforced Power SO8 variant with exposed drain pad for enhanced thermal and mechanical performance. The package features three parallel source terminals and one gate terminal, optimized for high-current PCB routing and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source	Three paralleled source terminals reduce bond-wire inductance and increase current-carrying capacity; connected internally to source metallization
4 (G)	Gate	Single gate input with 0.94 Ω intrinsic gate resistance - minimizes ringing in high-dI/dt switching
Drain (mb)	Drain (exposed pad)	Thermally and electrically connected mounting base - serves as primary drain connection and heat path to PCB copper

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, compatible with 3.3 V/5 V MCU GPIOs without level-shifting
Ultra-low R_DS(on)	1.2 mΩ max @ 10 V/25 °C enables <1.2 W conduction loss at 100 A - reduces thermal derating in dense power modules
LFPAK2 package	SOT1023 footprint delivers 3× higher power density than standard SO8, with 0.4 K/W thermal resistance to mounting base
Avalanche ruggedness	677 mJ E_AS supports safe operation under inductive load interruption - eliminates need for external clamping in many motor/battery applications

Applications

DC-DC Converters

Lithium-ion Battery Protection

Use Scenario: High-current synchronous buck converter in telecom power supplies operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Low-side switch handling up to 100 A continuous current with minimal conduction loss.

Use Value: 1.2 mΩ R_DS(on) reduces conduction loss by >40% vs. comparable 2.5 mΩ MOSFETs, improving full-load efficiency by ~1.2%.

Use Scenario: Primary overcurrent and short-circuit protection in 4S–12S Li-ion battery packs for power tools.

IC Role / Device Role / Timing Role: Main discharge FET controlled by battery management IC, requiring fast turn-off and avalanche tolerance.

Use Value: 677 mJ avalanche energy withstands fault currents without failure; 52 ns t_rr enables rapid current cutoff during cell imbalance events.

Server Power Supplies

Motor Control

Use Scenario: 12 V input VRM stage delivering >80 A to CPU/GPU cores in datacenter servers.

IC Role / Device Role / Timing Role: High-current power stage switch with tight thermal constraints on multilayer PCBs.

Use Value: 0.4 K/W R_th(j-mb) allows >100 W dissipation with 2 oz copper and thermal vias - avoids costly heatsinks.

Use Scenario: H-bridge low-side driver in 24 V BLDC motor controllers for industrial automation.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch managing PWM commutation at 20–40 kHz.

Use Value: 50.6 nC Q_G at 4.5 V enables efficient gate driving from low-voltage MCUs; 125 ns t_r supports clean edge transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.2 mΩ @ 10 V/25 °C; TO-220 package; R_th(j-c) = 1.25 K/W	Higher conduction loss and inferior thermal performance - requires larger heatsink in high-current apps	Choose only when through-hole assembly or legacy footprint compatibility is mandatory
DMTH10H025LPSQ	R_DS(on) = 1.0 mΩ @ 10 V/25 °C; LFPAK56 package; 150 °C rated; Q_G = 42 nC @ 4.5 V	Lower gate charge and marginally better R_DS(on), but higher cost and longer lead times	Prefer for new designs demanding highest efficiency and fastest switching, if cost and availability permit

Compared with IRL1404ZPBF, PSMN1R2-25YL delivers 2.7× lower R_DS(on) and 3× better thermal resistance; versus DMTH10H025LPSQ, it trades 0.2 mΩ R_DS(on) and 8.6 nC Q_G for broader supply chain availability and lower unit cost in high-volume production.

Availability

PSMN1R2-25YL is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, and high-current DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN1R2-25YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - delivering high-performance, reliable components for automotive, industrial, and consumer applications.

This MOSFET belongs to Nexperia's Logic Level TrenchMOS portfolio, engineered specifically for high-efficiency, high-current switching in space-constrained power systems where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for PSMN1R2-25YL at 100 °C mounting base temperature?

The datasheet specifies 100 A continuous drain current at T_mb = 25 °C, derated to approximately 65 A at T_mb = 100 °C per Figure 1. This limitation is package-defined, not silicon-limited, and assumes adequate PCB copper area for thermal spreading.

Can PSMN1R2-25YL be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage ranges from 1.3 V to 2.15 V at 25 °C, and it achieves R_DS(on) ≤ 1.85 mΩ at V_GS = 4.5 V and T_j = 25 °C. At 3.3 V, typical R_DS(on) is ~2.5 mΩ, sufficient for moderate-current applications; for full 100 A capability, 4.5 V or higher is recommended.

Does PSMN1R2-25YL have an integrated body diode, and what are its key parameters?

Yes - it includes a source-drain diode with forward voltage V_SD = 0.78–1.2 V at I_S = 25 A and T_j = 25 °C, reverse recovery time t_rr = 52 ns, and recovered charge Q_r = 66 nC. These values support efficient freewheeling in synchronous rectifiers and H-bridge motor drives.

What is the recommended PCB layout practice for optimal thermal performance of PSMN1R2-25YL?

Maximize copper area connected to the exposed drain pad (mb) using ≥8 thermal vias (0.3 mm diameter) to inner ground/power planes. Use ≥2 oz copper on top and inner layers, and ensure uninterrupted thermal paths to chassis or heatsink. Source pins (1–3) should be routed with wide, low-inductance traces to minimize switching loop area.

PSMN1R2-25YL,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1023, 4-LFPAK

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6380 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 121W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56; Power-SO8

PSMN1R2-25YL,115 FAQ

1.How can I place an order for PSMN1R2-25YL,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R2-25YL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R2-25YL,115 reliable?

The price and inventory of PSMN1R2-25YL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R2-25YL,115 is usually 5 days.

3.What payment methods are accepted for PSMN1R2-25YL,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R2-25YL,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R2-25YL,115?

PSMN1R2-25YL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R2-25YL,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R2-25YL,115?

For technical support, including PSMN1R2-25YL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R2-25YL,115 requirements.

6.How does Aetrix verify that PSMN1R2-25YL,115 is sourced from the original manufacturer or authorized distributors?

All PSMN1R2-25YL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R2-25YL,115 meets industry standards.

7.What is the process for return or replacement of PSMN1R2-25YL,115?

All PSMN1R2-25YL,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R2-25YL,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R2-25YL,115 part is unused and in its original packaging.

Return procedure for PSMN1R2-25YL,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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