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Nexperia USA Inc. PSMN1R2-25YLDX
- Part No.:
- PSMN1R2-25YLDX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN1R2-25YLDX.pdf
- Description:
- MOSFET N-CH 25V 100A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:2,023
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Product details
Overview
PSMN1R2-25YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 25 V VDS, 1.2 mΩ RDS(on) at VGS = 10 V and 25 A, 230 A continuous drain current (Tmb = 25 °C), and optimized for high-frequency synchronous rectification in server DC/DC converters.
For engineers reviewing the PSMN1R2-25YLD datasheet, PSMN1R2-25YLD pinout, PSMN1R2-25YLD application, or PSMN1R2-25YLD equivalent, this page delivers verified electrical specs, thermal performance data, gate charge behavior, SchottkyPlus diode characteristics, and real-world use cases in POL and VRM designs - all grounded in Nexperia's 2021 production data sheet.
Technical Context
This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology, delivering soft-recovery reverse diode behavior (S = 0.9) and sub-1 µA leakage at 25 °C - enabling high-efficiency, low-EMI operation without trade-offs in leakage or ruggedness. It is fully avalanche tested to IAS = 169 A and qualified to 175 °C junction temperature.
Designed for 4.5 V gate drive compatibility, it achieves ultra-low QG (34.4 nC), QGD (7 nC at 4.5 V), and QOSS (31.2 nC), supporting fast switching (tr = 30.3 ns, tf = 20.2 ns) in high-density power stages where parasitic inductance must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage; suitable for 12 V input bus and 5/3.3 V output rails in telecom and server POL systems. |
| RDS(on) | 1.2 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1.5 W conduction loss at 100 A, critical for high-current secondary-side rectification. |
| ID (cont) | 230 A @ Tmb = 25 °C - Validated continuous current; limited in practice by PCB copper area and thermal interface design. |
| QG(tot) | 34.4 nC @ VGS = 10 V - Low total gate charge reduces driver power loss and enables efficient operation above 500 kHz switching. |
| Rth(j-mb) | 0.71 K/W - Junction-to-mounting-base thermal resistance; supports >150 W dissipation with moderate heatsinking on a 2 oz FR4 pad. |
| VSD | 0.8–1.2 V @ IS = 25 A, Tj = 25 °C - Forward voltage of integrated source-drain diode; lower than standard body diodes, reducing freewheeling loss. |
| trr | 33.5 ns - Reverse recovery time; enables clean turn-off in hard-switched synchronous rectifiers without voltage spikes. |
Pinout & Package
LFPAK56 (SOT669) is a clip-bonded, solder-die-attached Power-SO8 variant with exposed mounting base (drain-connected), no wire bonds or adhesive, wave-solderable, and qualified to 175 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications like VRMs. |
| 4 | Gate (G) | Single gate input with low RG (1.1 Ω); optimized for direct drive from PWM controllers without external gate resistors in most POL layouts. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current return node - requires soldered thermal pad connection. |
Key Features
| Feature | Design Value |
|---|---|
| "SchottkyPlus" diode | Soft-recovery (S = 0.9), 0.8–1.2 V VSD, <1 µA leakage at 25 °C - eliminates need for external Schottky while avoiding leakage penalty. |
| Ultra-low QGD | 7 nC @ VGS = 4.5 V - minimizes Miller-induced switching delay and improves controllability in high-frequency synchronous rectification. |
| 100% avalanche tested | IAS = 169 A, EAS = 1293 mJ - ensures robustness against inductive load transients in motor control and OR-ing circuits. |
| Clip-bonded construction | No wire bonds or die attach glue - enhances power cycling reliability and thermal stability up to 175 °C junction temperature. |
| Wave-solderable leads | Exposed lead edges enable optical solder-joint inspection - critical for high-reliability server and telecom manufacturing lines. |
Applications
| Server On-Board DC/DC | Telecom Secondary-Side SR |
|---|---|
|
Use Scenario: High-current, high-efficiency buck converter on motherboard delivering 12 V → 1.8 V to ASICs and FPGAs. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode; driven by controller's low-side gate signal with tight timing alignment. Use Value: Reduces conduction loss by >40% vs. discrete Schottky, lowers junction temperature rise by ~15 °C at 150 A, and eliminates reverse recovery noise. |
Use Scenario: Isolated forward or LLC converter in 48 V telecom PSU supplying 5 V/3.3 V to line cards. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 300–600 kHz; leverages low QGD for precise dead-time control. Use Value: Achieves >95% efficiency at full load; soft-recovery diode prevents voltage overshoot during light-load discontinuous conduction mode. |
| VRM for GPU/V-Core | Power OR-ing |
|
Use Scenario: Multi-phase voltage regulator module powering modern GPUs with dynamic current demands exceeding 300 A peak. IC Role / Device Role / Timing Role: High-current phase-leg low-side switch; operated with interleaved PWM to distribute thermal load across multiple PSMN1R2-25YLD units. Use Value: 1.2 mΩ RDS(on) and 0.71 K/W Rth(j-mb) allow sustained 200 A per phase with <85 °C case temperature using standard 2 oz copper thermal pads. |
Use Scenario: Redundant 12 V input rails in industrial PLC or network switch, where seamless switchover between supplies is required. IC Role / Device Role / Timing Role: Ideal diode replacement; configured in common-source topology with gate driven by dedicated OR-ing controller. Use Value: Eliminates 0.3–0.5 V forward drop of mechanical diodes, reducing power loss by >2 W per rail and enabling compact thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | 40 V VDS, 1.4 mΩ RDS(on) @ 10 V, PG-TSDSON-8 package (smaller footprint, higher Rth(j-a)) | Better suited for 24 V input systems; less optimal for 12 V bus due to higher RDS(on) and thermal resistance to ambient. | Select when higher voltage margin is needed and board space is constrained - but verify thermal derating at 230 A. |
| Vishay SiR626DP | 25 V VDS, 1.3 mΩ RDS(on) @ 10 V, PowerPAK SO-8; QG = 42 nC (vs. 34.4 nC), no SchottkyPlus diode | Lacks soft-recovery diode - requires external snubbing in high-di/dt OR-ing; higher gate charge increases driver losses above 300 kHz. | Preferable only if cost sensitivity outweighs EMI and efficiency requirements; not recommended for >400 kHz VRMs. |
Compared with BSC014N04LS6 and SiR626DP, PSMN1R2-25YLD delivers superior system efficiency in 12 V-input, high-current synchronous rectification due to its lower RDS(on), lower QG, and integrated soft-recovery diode - making it the optimal choice for thermally dense server and telecom POL modules.
Availability
PSMN1R2-25YLD is available at Aetrix Electronics and suitable for server DC/DC converters, telecom secondary-side synchronous rectification, and GPU voltage regulator modules requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for PSMN1R2-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, with leadership in logic, discrete, and MOSFET technologies for high-volume, high-reliability applications.
This device belongs to the NextPowerS3 portfolio - engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and computing infrastructure where low RDS(on), low QG, and robust diode performance are mandatory.
FAQ
What is the maximum continuous drain current rating for PSMN1R2-25YLD?
The datasheet specifies 230 A continuous drain current at Tmb = 25 °C, validated in application testing. In practice, achievable current depends on PCB copper area, thermal interface resistance, and ambient temperature - typical designs sustain 150–180 A with 2 oz FR4 and 10 cm² thermal pad.
Does PSMN1R2-25YLD require a gate resistor for typical synchronous rectifier operation?
No external gate resistor is required for most POL and VRM applications due to its low intrinsic gate resistance (1.1 Ω) and optimized QG/QGD ratio. However, a 1–2 Ω resistor is recommended when driving from high-impedance sources or to damp ringing in ultra-high-speed (>1 MHz) layouts.
How does the "SchottkyPlus" diode compare to a discrete Schottky in reverse recovery performance?
The integrated SchottkyPlus diode achieves trr = 33.5 ns and softness factor S = 0.9 - matching discrete Schottky performance while eliminating leakage current (>10× lower than typical 45 V Schottkys) and enabling single-component replacement without layout rework.
Is PSMN1R2-25YLD suitable for automotive applications?
No - this part is not AEC-Q101 qualified and lacks automotive-specific stress testing or failure reporting. Nexperia explicitly states non-automotive qualification in the legal disclaimers; use only in industrial, computing, and telecom applications per the 2021 datasheet.
PSMN1R2-25YLDX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 60.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4327 pF @ 12 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 172W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN1R2-25YLDX FAQ
1.How can I place an order for PSMN1R2-25YLDX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R2-25YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R2-25YLDX reliable?
The price and inventory of PSMN1R2-25YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R2-25YLDX is usually 5 days.
3.What payment methods are accepted for PSMN1R2-25YLDX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R2-25YLDX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R2-25YLDX?
PSMN1R2-25YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R2-25YLDX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R2-25YLDX?
For technical support, including PSMN1R2-25YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R2-25YLDX requirements.
6.How does Aetrix verify that PSMN1R2-25YLDX is sourced from the original manufacturer or authorized distributors?
All PSMN1R2-25YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R2-25YLDX meets industry standards.
7.What is the process for return or replacement of PSMN1R2-25YLDX?
All PSMN1R2-25YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R2-25YLDX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R2-25YLDX part is unused and in its original packaging.
Return procedure for PSMN1R2-25YLDX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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