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Nexperia USA Inc. PSMN1R2-30YLD/2X
- Part No.:
- PSMN1R2-30YLD/2X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN1R2-30YLD/2X.pdf
- Description:
- PSMN1R2-30YLD/SOT669/LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,040
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Product details
Overview
PSMN1R2-30YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 30 V VDS, 1.2 mΩ RDS(on) at VGS = 4.5 V and 25 °C, and 250 A continuous drain current at Tmb = 25 °C. It employs NextPowerS3 technology with SchottkyPlus body diode for low EMI, soft-recovery switching (s-factor > 0.95), and optimized 4.5 V gate drive - deployed in server DC-DC converters and POL modules.
For engineers reviewing the PSMN1R2-30YLD datasheet, PSMN1R2-30YLD pinout, PSMN1R2-30YLD application, or PSMN1R2-30YLD equivalent, key selection criteria include its 0.69 K/W junction-to-mounting-base thermal resistance, 9.1 nC QGD, 32 nC total gate charge at 4.5 V, and LFPAK56 clip-bonded construction qualified to 175 °C junction temperature.
Technical Context
This MOSFET uses Nexperia's NextPowerS3 architecture with SchottkyPlus body diode integration, delivering Schottky-like reverse recovery (trr = 43.2 ns, Qr = 43 nC) and softness factor S = 0.95 while maintaining ultra-low leakage (<1 µA at 25 °C). Its gate threshold voltage is 1.7 V typical, enabling robust 4.5 V logic-level drive compatibility.
The device features ultra-low dynamic parameters: QG(tot) = 32 nC and QGD = 9.1 nC at VGS = 4.5 V, supporting high-frequency synchronous rectification. Its LFPAK56 package eliminates wire bonds and die attach glue, using clip bonding and solder die attach for <0.77 K/W Rth(j-mb) and 194 W Ptot at Tmb = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe blocking capability in 12 V–24 V input DC-DC stages |
| RDS(on) | 1.2 mΩ typical at VGS = 4.5 V, 25 °C - enables <300 mW conduction loss at 25 A |
| ID | 250 A continuous at Tmb = 25 °C - validated for high-current POL and VRM secondary-side use |
| QG(tot) | 32 nC at VGS = 4.5 V - minimizes gate drive power and switching loss above 500 kHz |
| trr | 43.2 ns - ensures low reverse recovery loss and reduced EMI in hard-switched synchronous rectifiers |
| Rth(j-mb) | 0.69 K/W typical - enables direct thermal coupling to heatsink or PCB copper, critical for 250 A operation |
| VGS(th) | 1.7 V typical - guarantees full enhancement with standard 3.3 V/5 V logic drivers |
Pinout & Package
LFPAK56 (SOT669) is a clip-bonded, solder-die-attached Power-SO8 variant with exposed mounting base connected to drain. It eliminates wire bonds and adhesive, supports wave and reflow soldering, and is qualified to 175 °C junction temperature.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single low-inductance gate connection optimized for fast, ringing-free turn-on/turn-off |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return |
Key Features
| Feature | Design Value |
|---|---|
| SchottkyPlus body diode | Soft reverse recovery (S = 0.95) with <1 µA leakage at 25 °C - replaces external Schottky in OR-ing and sync rectifier designs |
| Ultra-low QGD | 9.1 nC - reduces Miller-induced switching delay and improves controllability at >1 MHz frequencies |
| Optimized for 4.5 V drive | VGS(th) = 1.7 V typical, RDS(on) = 1.2 mΩ at 4.5 V - eliminates need for gate boosters in 5 V logic systems |
| Clip-bonded construction | No wire bonds or die attach glue - achieves 175 °C qualification and >10× lifecycle reliability vs. standard SO8 |
| Wave-solderable leads | Exposed lead geometry enables automated optical solder inspection - critical for high-volume server board manufacturing |
Applications
| Server On-Board DC-DC | Telecom Secondary-Side Sync Rectification |
|---|---|
Use Scenario: High-density 48 V to 12 V or 5 V conversion on AI accelerator cards and CPU VRMs. IC Role / Device Role / Timing Role: Primary high-side or synchronous rectifier switch operating at 300–800 kHz with tight thermal constraints. Use Value: 1.2 mΩ RDS(on) and 0.69 K/W Rth(j-mb) enable >95% efficiency at 200 A output without forced air cooling. |
Use Scenario: Isolated 48 V–54 V telecom power supplies delivering up to 200 A to baseband processing units. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes in forward or LLC topologies. Use Value: SchottkyPlus diode delivers trr = 43.2 ns and Qr = 43 nC - cuts reverse recovery loss by >60% vs. standard MOSFETs. |
| GPU/ASIC Point-of-Load | Power OR-ing for Redundant Supplies |
Use Scenario: Sub-1 V, >300 A power delivery to modern GPUs and AI ASICs in datacenter racks. IC Role / Device Role / Timing Role: Low-VDS high-current switch in multiphase buck converters with 1–2 MHz switching. Use Value: 32 nC QG(tot) at 4.5 V allows clean gate drive with minimal overshoot, reducing gate driver IC count and layout complexity. |
Use Scenario: Hot-swap and redundancy management in dual-input 12 V server backplanes and storage enclosures. IC Role / Device Role / Timing Role: Ideal diode replacement in active OR-ing controllers driving multiple 12 V inputs. Use Value: Ultra-low VSD = 0.78 V at 25 A and soft-recovery prevent cross-conduction and minimize power dissipation during switchover. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | 40 V VDS, 1.4 mΩ RDS(on) @ 4.5 V, PG-TSDSON-8 package, higher QG = 42 nC | Higher voltage rating suits 36 V input telecom; larger footprint and higher gate charge increase drive loss | Prefer when 40 V blocking margin is required and thermal design accommodates higher Rth(j-a). |
| Vishay SiR626DP | 30 V VDS, 1.3 mΩ RDS(on) @ 4.5 V, PowerPAK SO-8, no integrated Schottky-like diode (trr = 75 ns) | Lacks soft-recovery - unsuitable for high-frequency sync rectification without snubbers | Select only for low-frequency (<300 kHz), non-synchronous or snubber-assisted applications where cost is prioritized over EMI. |
Compared with BSC014N04LS6 and SiR626DP, PSMN1R2-30YLD offers superior thermal performance (0.69 K/W vs. ≥1.2 K/W), lower QGD (9.1 nC vs. ≥12 nC), and verified SchottkyPlus diode behavior - making it the optimal choice for compact, high-efficiency, high-frequency POL and telecom rectification where EMI and thermal density are critical.
Availability
PSMN1R2-30YLD is available at Aetrix Electronics and suitable for server DC-DC converters, telecom synchronous rectifiers, and GPU point-of-load modules requiring stable component supply, long-lifecycle assurance, and traceable sourcing for high-volume production.
Supply support for PSMN1R2-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.
PSMN1R2-30YLD belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter and telecom infrastructure - emphasizing low RDS(on), ultra-low QG, and integrated Schottky-like diode performance.
FAQ
What is the maximum continuous drain current for PSMN1R2-30YLD under real-world PCB conditions?
The datasheet specifies 250 A continuous at Tmb = 25 °C with ideal thermal mounting. In practice, sustained current is limited by PCB copper area, thermal vias, and ambient temperature. With a 1"² 2 oz FR4 pad per device, 150–180 A is achievable at Tmb ≤ 80 °C - confirmed via Nexperia's thermal simulation models and application testing.
Does PSMN1R2-30YLD require a gate resistor for stability in 500 kHz synchronous rectifier circuits?
Yes - a 2.2 Ω to 4.7 Ω gate resistor is recommended to dampen ringing caused by parasitic Lg/Ciss interaction. The device's low QGD (9.1 nC) and 1.15 Ω intrinsic gate resistance make it highly responsive but sensitive to layout-induced oscillation; resistor placement must be adjacent to the gate pin.
How does the SchottkyPlus body diode compare to a discrete Schottky in 48 V telecom rectification?
It matches Schottky VF (~0.78 V at 25 A) and trr (<50 ns), but with <1 µA leakage at 25 °C - versus 10–100 µA for discrete Schottkys. This eliminates standby power penalty in OR-ing and enables single-device replacement without derating for leakage-induced heating.
Can PSMN1R2-30YLD be used in avalanche-rated applications such as motor drive freewheeling?
No - it is not characterized or guaranteed for repetitive avalanche operation. Its EAS is 961 mJ (non-repetitive, unclamped), intended for single-event protection only. For motor control freewheeling, use Nexperia's dedicated avalanche-rated PSMN2R0-30YLC or similar qualified parts.
PSMN1R2-30YLD/2X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.24mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4616 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 194W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN1R2-30YLD/2X FAQ
1.How can I place an order for PSMN1R2-30YLD/2X through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R2-30YLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R2-30YLD/2X reliable?
The price and inventory of PSMN1R2-30YLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R2-30YLD/2X is usually 5 days.
3.What payment methods are accepted for PSMN1R2-30YLD/2X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R2-30YLD/2X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R2-30YLD/2X?
PSMN1R2-30YLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R2-30YLD/2X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R2-30YLD/2X?
For technical support, including PSMN1R2-30YLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R2-30YLD/2X requirements.
6.How does Aetrix verify that PSMN1R2-30YLD/2X is sourced from the original manufacturer or authorized distributors?
All PSMN1R2-30YLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R2-30YLD/2X meets industry standards.
7.What is the process for return or replacement of PSMN1R2-30YLD/2X?
All PSMN1R2-30YLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R2-30YLD/2X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R2-30YLD/2X part is unused and in its original packaging.
Return procedure for PSMN1R2-30YLD/2X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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