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Nexperia USA Inc. PSMN1R2-30YLDX
- Part No.:
- PSMN1R2-30YLDX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN1R2-30YLDX.pdf
- Description:
- MOSFET N-CH 30V 100A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:118
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Product details
Overview
PSMN1R2-30YLD from Nexperia is an N-channel 30 V, 1.2 mΩ (at VGS = 4.5 V, ID = 25 A, Tj = 25 °C), 250 A logic-level MOSFET in LFPAK56 (SOT669) package, utilizing NextPowerS3 SchottkyPlus technology for low EMI synchronous rectification in high-current DC-DC converters.
For engineers reviewing the PSMN1R2-30YLD datasheet, PSMN1R2-30YLD pinout, PSMN1R2-30YLD application, or PSMN1R2-30YLD equivalent, key selection criteria include RDS(on) at 4.5 V drive, QG/QGD for high-frequency efficiency, soft-recovery diode performance (S-factor > 0.95), thermal resistance to mounting base (0.69 K/W), and LFPAK56 clip-bonded reliability at 175 °C junction temperature.
Technical Context
This MOSFET employs Nexperia's NextPowerS3 architecture with integrated SchottkyPlus body diode-delivering soft reverse recovery (trr = 43.2 ns, S = 0.95) and <1 µA leakage at 25 °C-enabling high-efficiency secondary-side synchronous rectification without trade-offs in leakage or ruggedness.
Optimized for 4.5 V gate drive, it achieves ultra-low gate charge (QG(tot) = 32 nC @ VGS = 4.5 V) and minimal parasitic inductance via clip-bonded die attach and exposed mounting base, supporting stable operation up to 175 °C junction temperature and 1181 A pulsed drain current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 12 V and 24 V input bus architectures with margin for transient spikes. |
| RDS(on) | 1.2 mΩ typical @ VGS = 4.5 V - enables <1.5 W conduction loss at 250 A continuous current under optimal thermal conditions. |
| ID | 250 A continuous @ Tmb = 25 °C - validated in application testing for VRM/VRD and POL modules with robust PCB copper design. |
| QG(tot) | 32 nC @ VGS = 4.5 V - reduces gate drive power and switching losses in high-frequency (>500 kHz) synchronous buck topologies. |
| Rth(j-mb) | 0.69 K/W typical - allows direct thermal coupling to heatsink or PCB copper plane for efficient heat extraction in high-power density designs. |
| S-factor | 0.95 - ensures soft, low-ringing body diode recovery critical for EMI-sensitive telecom and server power supplies. |
| VGS(th) | 1.7 V typical - guarantees reliable turn-on with standard 3.3 V or 5 V logic-level controllers without level-shifting. |
Pinout & Package
LFPAK56 (SOT669) is a clip-bonded, solder-die-attached Power-SO8 variant with no wire bonds or adhesive. Its exposed mounting base (pin mb) provides low-inductance, low-resistance drain connection and direct thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single gate terminal optimized for low-QG drive; compatible with standard gate drivers delivering ≥4.5 V. |
| mb | Mounting Base / Drain (D) | Exposed copper pad electrically connected to drain; serves as primary thermal and current path to PCB heatsink area. |
Key Features
| Feature | Design Value |
|---|---|
| SchottkyPlus body diode | Soft reverse recovery (S = 0.95) with <1 µA leakage at 25 °C-eliminates need for external Schottky while avoiding leakage penalty. |
| Ultra-low QGD | 9.1 nC - minimizes Miller-induced switching delay and dv/dt-induced shoot-through risk in high-side configurations. |
| Clip-bonded construction | No wire bonds or glue; qualified to 175 °C junction temperature-ensures long-term reliability in thermally aggressive environments. |
| Wave-solderable leads | Exposed lead edges enable visual solder-joint inspection and compatibility with standard wave solder processes. |
| Low parasitic inductance | Optimized internal layout reduces LSD and LGD, suppressing voltage overshoot during hard-switching transitions. |
Applications
| Server DC-DC Conversion | Telecom Secondary-Side Rectification |
|---|---|
|
Use Scenario: High-current, high-efficiency point-of-load conversion in AI accelerator servers delivering >200 A to GPU/V-core rails. IC Role / Device Role / Timing Role: Primary synchronous rectifier in multiphase buck converter, operating at 300–600 kHz with 4.5 V gate drive. Use Value: 1.2 mΩ RDS(on) and 32 nC QG reduce conduction + switching losses by ~18% vs. legacy 3.5 mΩ MOSFETs, enabling higher power density without forced air cooling. |
Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V telecom DC-DC modules for O-RAN radios and edge switches. IC Role / Device Role / Timing Role: Low-voltage-side switch in forward or active-clamp forward topology, leveraging soft-recovery diode for zero-voltage switching assist. Use Value: S-factor > 0.95 suppresses ringing and EMI, allowing smaller output filters and meeting CISPR-32 Class B emissions without shielding. |
| VRM/VRD Voltage Regulator Modules | Power OR-ing in Redundant Supplies |
|
Use Scenario: Core power delivery for CPU/GPU in enterprise workstations and data center rack servers requiring dynamic load steps up to 300 A/µs. IC Role / Device Role / Timing Role: High-side switch in multi-phase buck regulator, driven by dedicated PWM controller with adaptive dead-time control. Use Value: 250 A continuous rating and 1181 A pulsed capability sustain transient loads without derating, while 0.69 K/W Rth(j-mb) maintains Tj < 125 °C under full load. |
Use Scenario: Hot-swap and redundancy management in dual-input 12 V backup power systems for industrial PLCs and network infrastructure. IC Role / Device Role / Timing Role: Ideal diode replacement in OR-ing configuration, controlled by external monitor IC to prevent backfeed and enable seamless switchover. Use Value: Ultra-low VSD (0.78 V typ.) and fast trr (43.2 ns) minimize forward drop and reverse recovery loss, improving system efficiency by >2.5% over discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, low-RDS(on) logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRFB7530PBF | RDS(on) = 1.4 mΩ @ 4.5 V; QG = 42 nC; TO-220FP package; no integrated soft diode. | Higher thermal resistance (Rth(j-c) ≈ 1.2 K/W); requires heatsink; unsuitable for ultra-thin VRM layouts. | Select when cost sensitivity outweighs board space and EMI constraints; avoid in >400 kHz or compact telecom modules. |
| Vishay SiR626DP | RDS(on) = 1.15 mΩ @ 4.5 V; QG = 34 nC; PowerPAK SO-8; soft-recovery diode not characterized. | Limited avalanche energy rating (EAS = 320 mJ vs. 961 mJ); unqualified beyond 150 °C junction. | Acceptable for non-critical POL use below 100 A; not recommended for telecom rectification where unclamped inductive switching occurs. |
Compared with IRFB7530PBF and SiR626DP, PSMN1R2-30YLD delivers superior thermal performance (0.69 K/W), industry-leading soft-recovery (S = 0.95), and full 175 °C qualification-making it the only choice for high-reliability, high-frequency, high-density server and telecom power stages.
Availability
PSMN1R2-30YLD is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom secondary-side rectification, and VRM/VRD voltage regulator modules requiring stable component supply across extended production lifecycles.
Supply support for PSMN1R2-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in logic, discretes, and MOSFETs for power management.
The NextPowerS3 product line was engineered specifically for high-efficiency, high-frequency power conversion-targeting server, telecom, and industrial POL applications demanding low RDS(on), low QG, and robust body diode performance.
FAQ
What is the maximum continuous drain current for PSMN1R2-30YLD under real-world PCB conditions?
The datasheet specifies 250 A continuous current at Tmb = 25 °C, validated in application testing. In practice, achievable current depends on PCB copper area, thermal vias, airflow, and ambient temperature. With a 1"² 2 oz copper pad and 6 thermal vias, sustained currents of 180–210 A are typical before reaching 125 °C junction temperature.
Does PSMN1R2-30YLD require a gate resistor for stability in high-frequency synchronous rectification?
Yes-a small gate resistor (2–5 Ω) is recommended to dampen potential oscillation caused by interaction between gate drive impedance and the device's low QGD (9.1 nC) and Ciss (4616 pF). This prevents unintended turn-on during high dv/dt events and improves EMI behavior without significantly impacting switching speed.
How does the SchottkyPlus body diode compare to a discrete Schottky in terms of reverse recovery and leakage?
The SchottkyPlus diode achieves reverse recovery characteristics (trr = 43.2 ns, S = 0.95) nearly identical to a discrete Schottky, but with leakage <1 µA at 25 °C-over 10× lower than typical 45 V Schottky diodes (10–50 µA). This eliminates the trade-off between soft recovery and leakage-driven standby loss.
Can PSMN1R2-30YLD be used in automotive applications?
No. PSMN1R2-30YLD is not AEC-Q101 qualified and lacks automotive-specific stress testing, packaging validation, or PPAP documentation. It is intended for industrial, computing, and telecom applications only. For automotive 12 V systems, Nexperia offers the AEC-Q101-qualified PSMN2R0-30YLC.
PSMN1R2-30YLDX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.24mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4616 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 194W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN1R2-30YLDX FAQ
1.How can I place an order for PSMN1R2-30YLDX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R2-30YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R2-30YLDX reliable?
The price and inventory of PSMN1R2-30YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R2-30YLDX is usually 5 days.
3.What payment methods are accepted for PSMN1R2-30YLDX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R2-30YLDX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R2-30YLDX?
PSMN1R2-30YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R2-30YLDX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R2-30YLDX?
For technical support, including PSMN1R2-30YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R2-30YLDX requirements.
6.How does Aetrix verify that PSMN1R2-30YLDX is sourced from the original manufacturer or authorized distributors?
All PSMN1R2-30YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R2-30YLDX meets industry standards.
7.What is the process for return or replacement of PSMN1R2-30YLDX?
All PSMN1R2-30YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R2-30YLDX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R2-30YLDX part is unused and in its original packaging.
Return procedure for PSMN1R2-30YLDX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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