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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R2-55SLHAX

Name: PSMN1R2-55SLHAX
Brand: Nexperia USA Inc.
SKU: PSMN1R2-55SLHAX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R2-55SLHAX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1235

Datasheet:: PSMN1R2-55SLHAX.pdf

Description:: PSMN1R2-55SLH/SOT1235/LFPAK88

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Product details

Overview

PSMN1R2-55SLH from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK88 (SOT1235) package, rated for 55 V V_DS, 1.03 mΩ R_DS(on) at V_GS = 10 V and 25 °C, and 330 A continuous drain current at T_mb = 25 °C. It features SchottkyPlus technology for low-spiking switching, 100% avalanche-tested ruggedness, and is optimized for battery isolation and high-current DC motor control in 36 V lithium-ion systems.

For engineers reviewing the PSMN1R2-55SLH datasheet, PSMN1R2-55SLH pinout, PSMN1R2-55SLH application, or PSMN1R2-55SLH equivalent, key selection criteria include its 0.35 K/W junction-to-mounting-base thermal resistance, narrow 1.2–2.2 V V_GS(th) distribution for parallel operation, and soft body-diode recovery enabling low-EMI synchronous rectification in server PSUs.

Technical Context

This MOSFET employs copper-clip die attach and exposed lead-frame construction in the LFPAK88 package to minimize package inductance and thermal resistance-enabling 375 W total power dissipation at T_mb = 25 °C and stable linear-mode operation up to 175 °C junction temperature. Its SchottkyPlus body diode delivers 48 ns t_rr and 66 nC Q_r with negligible leakage (IDSS ≤ 1 µA at 25 °C), distinguishing it from conventional integrated-Schottky MOSFETs.

The device is characterized by low dynamic charge metrics: Q_G(tot) = 116–180 nC at V_GS = 4.5 V, Q_GD = 28–62 nC, and C_iss/C_oss/C_rss of 18.4–25.8 nF / 1.4–2.0 nF / 0.47–1.13 nF respectively-supporting high-frequency switching (>100 kHz) with minimal gate drive loss and voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V maximum drain-source voltage - supports 36–42 V battery systems with margin against transients and load-dump events.
R_DS(on)	0.81–1.03 mΩ at V_GS = 10 V, 25 °C - enables <1.5 W conduction loss at 300 A, critical for eFuse and hot-swap applications.
I_D (cont)	330 A at T_mb = 25 °C - validated under application conditions; real-world current limited by PCB thermal design and mounting base temperature.
E_AS	2.6 J unclamped avalanche energy (T_j(init) = 25 °C) - ensures robustness during inductive turn-off in motor drives without external snubbers.
t_rr	48 ns reverse recovery time - reduces switching losses and EMI in synchronous rectifier topologies versus standard MOSFETs.
R_th(j-mb)	0.35 K/W typical junction-to-mounting-base thermal resistance - allows direct thermal coupling to heatsink or copper plane for high-power density layouts.
V_GS(th)	1.2–2.2 V at I_D = 1 mA - tight threshold distribution enables stable current sharing in paralleled configurations without gate resistors.

Pinout & Package

LFPAK88 (SOT1235) is an 8 mm × 8 mm × 1.6 mm surface-mount package with exposed copper mounting base connected to drain, optimized for low-inductance, high-current routing and visual solder-joint inspection. Its copper-clip construction and low-stress lead-frame deliver superior reliability over D2PAK and 10×12 mm alternatives.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate terminal - accepts logic-level drive (V_GS(th) ≤ 2.2 V); low Q_G enables fast switching with standard gate drivers.
2, 3, 4	S	Source terminals - three parallel source leads reduce source inductance and improve current sharing in high-di/dt applications like BLDC inverters.
Mounting Base	D	Drain connection - thermally and electrically tied to internal die drain; must be soldered to large copper area for thermal management and low-impedance return path.

Key Features

Feature	Design Value
SchottkyPlus body diode	Combines Schottky-like soft recovery (t_b = 19 ns) and low Q_r (66 nC) with IDSS ≤ 1 µA at 25 °C-eliminates need for external anti-parallel diodes in synchronous rectifiers.
LFPAK88 package	8×8 mm footprint with exposed drain pad and triple-source leads-reduces package inductance by >40% vs D2PAK and enables 330 A current handling with 0.35 K/W R_th(j-mb).
Avalanche rating	100% production-tested unclamped avalanche energy (E_AS = 2.6 J @ 50 A)-ensures field reliability in motor control and battery protection without derating.
Narrow V_GS(th)	1.2–2.2 V range at I_D = 1 mA-supports stable parallel operation across temperature without active current balancing circuitry.
High-temperature qualification	Rated for continuous operation at T_j = 175 °C-meets requirements for under-hood automotive battery disconnect and industrial motor drives.

Applications

Brushless DC Motor Control

Synchronous Rectification

Use Scenario: High-power inverter stage in 36 V e-bike or power tool motor drives operating at 20–50 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element handling peak currents >250 A with minimal conduction and switching loss.

Use Value: 0.81 mΩ R_DS(on) and 48 ns t_rr reduce total losses by ≥15% versus comparable D2PAK MOSFETs, extending battery runtime and reducing heatsink size.

Use Scenario: Secondary-side synchronous rectifier in 3 kW server AC/DC power supply with LLC resonant topology.

IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diodes, driven by controller with precise dead-time control.

Use Value: SchottkyPlus diode enables zero-voltage switching (ZVS) assist while maintaining <1 µA leakage-improving full-load efficiency by 0.8% over standard MOSFETs.

Battery Protection

eFuse / Load Switch

Use Scenario: Primary protection switch in 10-cell Li-ion battery pack (36–42 V) with overcurrent, short-circuit, and thermal shutdown functions.

IC Role / Device Role / Timing Role: Main power path FET controlled by battery management IC; must sustain 330 A fault current briefly before opening.

Use Value: 1588 A pulsed peak current rating and 2.6 J avalanche energy allow safe interruption of >500 A short-circuit events without destruction.

Use Scenario: Hot-swap controller output stage in telecom power shelf managing inrush into 12 V/50 A distributed power bus.

IC Role / Device Role / Timing Role: Controlled ramp-up switch limiting dI/dt during insertion; requires low R_DS(on) and strong SOA for linear-mode operation.

Use Value: Strong linear-mode SOA (Fig. 3) and 0.35 K/W R_th(j-mb) enable controlled 100 A inrush limiting with <20 °C junction rise-avoiding thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N08N	80 V V_DS, 2.6 mΩ R_DS(on) @ 10 V, TO-220 package, higher R_th(j-a) (1.2 K/W)	Higher voltage margin but 2.5× higher on-resistance and inferior thermal performance in surface-mount designs	Select only if 80 V rating is mandatory and through-hole assembly is acceptable; not suitable for space-constrained 36 V battery modules.
Vishay SiR626DP	60 V V_DS, 1.25 mΩ R_DS(on) @ 10 V, PowerPAK 8×8, no avalanche rating, Q_G = 192 nC	Lacks 100% avalanche test and has slower switching (higher Q_G)-increases EMI risk in high-frequency rectifiers	Acceptable for non-avalanche-critical load switches where cost is primary; avoid in motor control or safety-critical battery isolation.

Compared with IPP026N08N and SiR626DP, PSMN1R2-55SLH offers the lowest R_DS(on) in a surface-mount package with guaranteed avalanche ruggedness and industry-leading thermal resistance-making it optimal for compact, high-reliability 36 V power systems requiring both efficiency and fault tolerance.

Availability

PSMN1R2-55SLH is available at Aetrix Electronics and suitable for brushless DC motor control, synchronous rectification in server PSUs, battery protection circuits, and eFuse applications requiring stable component supply and long-term lifecycle support.

Supply support for PSMN1R2-55SLH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic families.

This part belongs to Nexperia's ASFETs for Battery Isolation and DC Motor Control product line-engineered specifically for high-current, high-temperature, and high-ruggedness applications in battery-powered industrial and transportation systems.

FAQ

What is the maximum continuous drain current for PSMN1R2-55SLH under real PCB conditions?

The datasheet specifies 330 A at T_mb = 25 °C, but actual continuous current is determined by thermal design. With a 25.4 mm² 70 µm copper pad per Fig. 5, sustained current drops to ~220 A at T_mb = 80 °C. Derating curves in Fig. 2 must be used with measured mounting base temperature-not ambient-to ensure safe operation.

Does PSMN1R2-55SLH require a gate resistor for stability in high-speed switching?

No external gate resistor is required for basic stability due to its low 0.4–2.5 Ω intrinsic gate resistance and optimized gate charge profile (Q_GD/Q_G = 0.24 typ). However, a 2–5 Ω series resistor is recommended to damp ringing when driving from high-impedance controllers or over long PCB traces-especially above 200 kHz.

How does the SchottkyPlus body diode differ from a standard MOSFET body diode in practice?

SchottkyPlus delivers 48 ns t_rr and 66 nC Q_r-comparable to discrete Schottky diodes-while maintaining IDSS ≤ 1 µA at 25 °C and ≤6.7 µA at 125 °C. This eliminates reverse-recovery spikes and EMI without sacrificing leakage performance, enabling direct replacement of Schottkys in synchronous rectifiers without thermal penalty.

Can PSMN1R2-55SLH be paralleled with identical units without current-sharing resistors?

Yes-its narrow 1.2–2.2 V V_GS(th) distribution and flat R_DS(on) vs. temperature curve (Fig. 11) enable natural current sharing. Test data shows <10% current imbalance between two units at 300 A total with matched layout and gate drive; no gate resistors needed if trace lengths and thermal coupling are symmetrical.

PSMN1R2-55SLHAX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1235

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 330A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.03mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 395 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 25773 pF @ 27 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK88 (SOT1235)

PSMN1R2-55SLHAX FAQ

1.How can I place an order for PSMN1R2-55SLHAX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R2-55SLHAX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R2-55SLHAX reliable?

The price and inventory of PSMN1R2-55SLHAX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R2-55SLHAX is usually 5 days.

3.What payment methods are accepted for PSMN1R2-55SLHAX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R2-55SLHAX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R2-55SLHAX?

PSMN1R2-55SLHAX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R2-55SLHAX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R2-55SLHAX?

For technical support, including PSMN1R2-55SLHAX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R2-55SLHAX requirements.

6.How does Aetrix verify that PSMN1R2-55SLHAX is sourced from the original manufacturer or authorized distributors?

All PSMN1R2-55SLHAX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R2-55SLHAX meets industry standards.

7.What is the process for return or replacement of PSMN1R2-55SLHAX?

All PSMN1R2-55SLHAX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R2-55SLHAX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R2-55SLHAX part is unused and in its original packaging.

Return procedure for PSMN1R2-55SLHAX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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