Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R2-55SLHX

Name: PSMN1R2-55SLHX
Brand: Nexperia USA Inc.
SKU: PSMN1R2-55SLHX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN1R2-55SLHX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1235

Datasheet:: PSMN1R2-55SLHX.pdf

Description:: N-CHANNEL 55 V, 1.03 MOHM, 330 A

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,651

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN1R2-55SLHX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK88 (SOT1235) package, rated for 55 V V_DS, 1.03 mΩ R_DS(on) at V_GS = 10 V and 25 °C, and 330 A continuous drain current at T_mb = 25 °C. It features SchottkyPlus technology for low-spiking switching, 100% avalanche-tested ruggedness, and is optimized for battery isolation and high-current DC motor control in 36 V systems.

For engineers reviewing the PSMN1R2-55SLHX datasheet, PSMN1R2-55SLHX pinout, PSMN1R2-55SLHX application, or PSMN1R2-55SLHX equivalent, this device supports high-frequency synchronous rectification, eFuse/Hotswap load switching, and linear-mode operation with strong SOA - critical for 10-cell Li-ion battery protection and server power supply designs.

Technical Context

This MOSFET employs copper-clip die attach and exposed mounting base (drain-connected) to minimize package inductance and thermal resistance (R_th(j-mb) = 0.35 K/W), enabling high-current pulse handling (I_DM = 1588 A) and stable operation up to 175 °C junction temperature. Its narrow V_GS(th) (1.2–2.2 V) and low Q_G/Q_GD support precise paralleling and efficient high-frequency switching.

SchottkyPlus technology delivers soft body-diode recovery (t_rr = 48 ns, Q_r = 66 nC) and low reverse recovery spiking without elevated I_DSS leakage - achieving Schottky-like performance while maintaining <1 µA I_DSS at 125 °C and 44 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage for 36–42 V battery systems with margin.
R_DS(on)	1.03 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 300 A, critical for high-efficiency motor drives.
I_D (cont)	330 A @ T_mb = 25 °C - Validated continuous current rating; limited by PCB thermal design in practice.
Q_G(tot)	116–180 nC @ V_GS = 4.5 V - Low gate charge enables fast switching with minimal driver loss at >100 kHz.
E_AS	2.6 J @ I_D = 50 A, unclamped - 100% tested avalanche energy rating ensures robustness in inductive load switching.
t_rr	48 ns - Fast, soft reverse recovery reduces EMI and voltage overshoot in synchronous rectifier topologies.
R_th(j-mb)	0.35 K/W - Ultra-low junction-to-mounting-base thermal resistance supports direct heatsink attachment and high-power density layouts.

Pinout & Package

LFPAK88 (SOT1235) is an 8 mm × 8 mm × 1.6 mm surface-mount package with exposed copper mounting base (drain-connected) and four leads: three source terminals and one gate terminal. The low-stress lead-frame and copper-clip construction ensure mechanical reliability and optimal solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - Logic-level compatible (V_GS(th) = 1.2–2.2 V); accepts 4.5 V drive for full enhancement.
2	S	Source return - Low-inductance connection shared across three parallel pins for high-current path integrity.
3	S	Source return - Electrically identical to Pin 2; reduces trace inductance and improves current sharing.
4	S	Source return - Third parallel source terminal; minimizes common-source inductance in high-dI/dt applications.
mb	D	Mounting base (drain) - Exposed copper pad thermally and electrically connected to drain; serves as primary heat path and high-current output node.

Key Features

Feature	Design Value
330 A continuous current capability	Validated under application test conditions; enables single-device replacement of multi-MOSFET arrays in battery isolation switches.
SchottkyPlus body diode	Soft recovery (t_a = 29 ns, t_b = 19 ns) and low Q_r = 66 nC reduce ringing and EMI without sacrificing I_DSS leakage performance.
Narrow V_GS(th) distribution	1.2–2.2 V range allows stable current sharing when paralleled - essential for scalable eFuse and hot-swap designs.
175 °C qualified operation	Rated for continuous use up to 175 °C junction temperature; supports compact thermal design in sealed industrial enclosures.
Avalanche ruggedness	100% production-tested to 2.6 J (50 A, 1.5 ms) - guarantees safe operation during inductive turn-off transients in motor control.

Applications

Brushless DC Motor Control

Synchronous Rectification

Use Scenario: High-power BLDC inverter half-bridge leg for e-bike or industrial actuator drive.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling 200–300 A peak currents with <100 ns switching transitions.

Use Value: Low R_DS(on) and high I_D rating minimize conduction loss; SchottkyPlus diode eliminates external freewheeling diode and reduces board area.

Use Scenario: Secondary-side synchronous rectifier in 3 kW server PSU operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Fast-turning MOSFET replacing Schottky diodes to improve efficiency above 48 V output.

Use Value: Soft t_rr and low Q_GD suppress voltage spikes during commutation; 175 °C rating sustains reliability under high ambient temperatures.

Battery Protection (eFuse)

Hotswap / Inrush Management

Use Scenario: Primary protection switch in 10-cell Li-ion battery pack (36–42 V) with overcurrent and short-circuit response.

IC Role / Device Role / Timing Role: Load switch with active current limiting and fast fault shutdown (<10 µs).

Use Value: Strong linear-mode SOA enables controlled current limiting without thermal runaway; avalanche rating handles fault energy safely.

Use Scenario: Hotswap controller for redundant 48 V backplane powering telecom line cards.

IC Role / Device Role / Timing Role: Controlled ramp-up switch managing inrush into large bulk capacitance (≥10,000 µF).

Use Value: Precise V_GS(th) and low Q_G allow smooth gate-controlled slew rate; exposed drain pad simplifies thermal management during sustained inrush.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	40 V V_DS, 2.6 mΩ R_DS(on), TO-252 package - lower voltage rating and higher on-resistance; no avalanche testing specified.	Limited to ≤36 V systems; unsuitable for 42 V Li-ion peak or unclamped inductive loads.	Select only if system V_bus ≤ 32 V and avalanche robustness is not required.
Vishay SiR626DP	60 V V_DS, 1.25 mΩ R_DS(on) @ 10 V, PowerPAK 8x8 - similar R_DS(on) but higher Q_G (220 nC) and no SchottkyPlus diode.	Higher switching loss at >200 kHz; requires external snubbing for low-EMI rectification.	Prefer for cost-sensitive 60 V designs where diode recovery is managed externally.

Compared with IPP026N04L and SiR626DP, PSMN1R2-55SLHX uniquely combines 55 V rating, sub-1.1 mΩ on-resistance, 100% avalanche testing, and SchottkyPlus soft recovery - making it the only option qualified for high-reliability 36 V battery isolation with simultaneous high-frequency and linear-mode demands.

Availability

PSMN1R2-55SLHX is available at Aetrix Electronics and suitable for brushless DC motor control, synchronous rectification in server PSUs, and battery protection circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for PSMN1R2-55SLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and advanced packaging technologies like LFPAK.

This device belongs to Nexperia's ASFET family for battery isolation and DC motor control - engineered specifically for high-current, high-temperature, and high-ruggedness applications in energy storage and industrial power systems.

FAQ

What is the maximum continuous drain current for PSMN1R2-55SLHX?

The datasheet specifies 330 A continuous drain current at T_mb = 25 °C with adequate PCB copper and thermal management. At T_mb = 100 °C, the rating drops to 284 A. Real-world current is constrained by board layout, heatsinking, and ambient conditions-not the MOSFET alone.

Does PSMN1R2-55SLHX require a gate driver for logic-level operation?

No external driver is required for basic switching: its V_GS(th) (1.2–2.2 V) and low Q_G enable direct MCU GPIO control at 3.3 V or 5 V. However, for high-frequency (>200 kHz) or high-current (>100 A) applications, a dedicated gate driver improves rise/fall time control and reduces switching losses.

How does SchottkyPlus technology differ from a standard MOSFET body diode?

SchottkyPlus modifies the body diode's doping profile to achieve soft reverse recovery (t_rr = 48 ns, Q_r = 66 nC) and low spiking-similar to Schottky diodes-but retains standard MOSFET leakage (<1 µA at 125 °C), unlike integrated Schottky MOSFETs which suffer from high I_DSS.

Can PSMN1R2-55SLHX be paralleled with identical units?

Yes: its narrow V_GS(th) distribution (1.2–2.2 V) and matched R_DS(on) temperature coefficient enable stable current sharing. Use symmetrical PCB layout, individual gate resistors, and Kelvin source connections to maintain balance under dynamic load conditions.

PSMN1R2-55SLHX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1235

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 330A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.03mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 395 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 25773 pF @ 27 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK88 (SOT1235)

PSMN1R2-55SLHX FAQ

1.How can I place an order for PSMN1R2-55SLHX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R2-55SLHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R2-55SLHX reliable?

The price and inventory of PSMN1R2-55SLHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R2-55SLHX is usually 5 days.

3.What payment methods are accepted for PSMN1R2-55SLHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R2-55SLHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R2-55SLHX?

PSMN1R2-55SLHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R2-55SLHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R2-55SLHX?

For technical support, including PSMN1R2-55SLHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R2-55SLHX requirements.

6.How does Aetrix verify that PSMN1R2-55SLHX is sourced from the original manufacturer or authorized distributors?

All PSMN1R2-55SLHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R2-55SLHX meets industry standards.

7.What is the process for return or replacement of PSMN1R2-55SLHX?

All PSMN1R2-55SLHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R2-55SLHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R2-55SLHX part is unused and in its original packaging.

Return procedure for PSMN1R2-55SLHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…