Nexperia USA Inc. PSMN1R3-30YL,115

Overview

PSMN1R3-30YL from Nexperia is a logic-level N-channel MOSFET in LFPAK2 (SOT1023) package, rated for 30 V V_DS, 1.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 100 A continuous drain current at T_mb = 25 °C, and qualified to 150 °C junction temperature. It delivers high-efficiency switching in DC-DC converters and lithium-ion battery protection circuits.

For engineers reviewing the PSMN1R3-30YL datasheet, PSMN1R3-30YL pinout, PSMN1R3-30YL application, or PSMN1R3-30YL equivalent, this device is selected for high-current, low-R_DS(on) load switching where thermal performance and gate-drive simplicity (logic-level V_GS(th) = 1.3–2.15 V) are critical.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve ultra-low on-resistance and reduced gate charge-Q_G(tot) = 46.6 nC at V_GS = 4.5 V-enabling fast switching with minimal drive loss. Its LFPAK2 package integrates a thermally optimized mounting base directly connected to the drain, delivering R_th(j-mb) = 0.4 K/W typical for efficient heat transfer to PCB copper or heatsinks.

The device features robust avalanche capability (E_AS = 383 mJ), a wide V_GS rating (±20 V), and stable R_DS(on) over temperature (1.9 mΩ max at T_j = 150 °C). Its source-drain diode exhibits low V_SD = 0.88 V at 25 A and fast reverse recovery (t_rr = 46 ns), supporting synchronous rectification and bidirectional current handling.

Key Specifications

Pinout & Package

LFPAK2 (SOT1023) is a 4-lead plastic single-ended surface-mounted package with an exposed mounting base electrically connected to the drain. The package provides enhanced thermal and mechanical robustness versus standard SO8, with footprint compatibility and superior power density.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with PSMN2R3-30YL and IRL3803PBF, the PSMN1R3-30YL offers the lowest R_DS(on) in its class and superior thermal delivery via LFPAK2, making it optimal for space-constrained, high-efficiency 30 V power stages where thermal headroom is limited.

Availability

PSMN1R3-30YL is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and server power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for PSMN1R3-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection.

This part belongs to Nexperia's logic-level TrenchMOS portfolio, engineered specifically for high-efficiency, high-current switching in industrial and computing power systems where thermal performance and gate-drive simplicity are essential.

FAQ

What is the maximum continuous drain current for PSMN1R3-30YL at 100 °C mounting base temperature?

The datasheet specifies I_D = 100 A at T_mb = 25 °C, but derates with temperature. At T_mb = 100 °C, Figure 1 shows normalized current ≈ 0.65×, yielding ~65 A continuous. This reflects package thermal limits-not silicon capability-and assumes adequate PCB copper area per Nexperia's recommended layout.

Can PSMN1R3-30YL be driven directly by a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) min = 1.3 V and typical R_DS(on) = 1.43 mΩ at V_GS = 4.5 V, the device fully enhances at 3.3 V-though R_DS(on) rises to ~2.1 mΩ (per Figure 5). For 100 A operation, gate drive must supply ≥1.5 A peak to charge Q_G = 46.6 nC within nanoseconds; a dedicated gate driver is recommended above 10 A loads.

How does the LFPAK2 package improve thermal performance over standard SO-8?

LFPAK2 replaces the plastic body and internal leadframe of SO-8 with a copper mounting base directly bonded to the die drain. This reduces R_th(j-mb) to 0.4 K/W (typical) vs. ~3.5 K/W for SO-8, enabling >3× higher power dissipation at the same temperature rise. The three-source pins also lower source inductance by ~40%, improving EMI and switching stability.

Is the source-drain diode suitable for synchronous rectification?

Yes. The integrated body diode has V_SD = 0.88 V at 25 A and t_rr = 46 ns, with Q_r = 53 nC-comparable to discrete Schottky diodes in 30 V class. Its soft recovery characteristic minimizes voltage overshoot, and the low forward drop reduces conduction loss in low-V_DS applications like buck converters below 12 V output.