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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R4-100ASEJ

Name: PSMN1R4-100ASEJ
Brand: Nexperia USA Inc.
SKU: PSMN1R4-100ASEJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R4-100ASEJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Datasheet:: PSMN1R4-100ASEJ.pdf

Description:: N-CHANNEL, 100 V, 1.36 MOHM, MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN1R4-100ASEJ from Nexperia is an N-channel enhancement-mode MOSFET in a CCPAK1212 (SOT8000A) copper-clip package, rated for 100 V V_DS, 1.36 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 340 A continuous drain current at T_mb = 25 °C and features enhanced Safe Operating Area (SOA) for linear-mode hot-swap and soft-start control in 48 V telecom backplane systems.

For engineers reviewing the PSMN1R4-100ASEJ datasheet, PSMN1R4-100ASEJ pinout, PSMN1R4-100ASEJ application, or PSMN1R4-100ASEJ equivalent, this device is selected for high-current load switching where robust avalanche energy handling (1130 mJ), low thermal resistance (0.123 K/W j-mb), and JEDEC-standardized open-market compatibility are critical design requirements.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for linear-mode operation, with SOA curves validated up to 100 V and 340 A DC under mounting base temperature derating. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 3.6 V at 25 °C and exhibits -6.55 mV/K temperature coefficient, enabling stable turn-on behavior across -55 °C to 175 °C.

The device integrates a monolithic source-drain diode with 84 nC recovered charge and 62 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in e-fuse and load-switch topologies. Its 244 nC typical total gate charge and 4.5 V gate plateau voltage support controlled turn-on/turn-off timing with standard 5 Ω external gate resistors.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V telecom rail protection with 2× safety margin
R_DS(on)	1.36 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables ≤0.115 W conduction loss at 340 A
I_D (cont)	340 A @ T_mb = 25 °C - Validated continuous current rating, limited by PCB thermal design
E_AS	1130 mJ - Non-repetitive avalanche energy supports unclamped inductive turn-off in hot-swap controllers
R_th(j-mb)	0.123 K/W - Junction-to-mounting-base thermal resistance enables high-power dissipation on copper heatsinks
Q_G(tot)	244 nC - Total gate charge determines drive strength requirement for <150 ns switching transitions
V_GS(th)	2.64 V typ @ T_j = 25 °C - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

CCPAK1212 (SOT8000A) is a 13-terminal surface-mount copper-clip package measuring 12 mm × 12 mm × 2.5 mm, with exposed drain-connected mounting base for direct thermal interface. The package complies with JEDEC MO-359 and supports open-market second sourcing.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - High-impedance control terminal requiring 244 nC charge for full enhancement
2–6	S	Source return - Five parallel source terminals minimize source inductance and improve current sharing
7–12	D	Drain power path - Six drain terminals plus mounting base provide low-inductance, high-current conduction path
mb	D (mounting base)	Drain-connected thermal pad - Electrically and thermally ties to PCB copper for 0.123 K/W R_th(j-mb)

Key Features

Feature	Design Value
Enhanced SOA for linear mode	Validated safe operation up to 100 V × 340 A DC with T_mb-based derating - enables robust hot-swap inrush limiting without external current sensing
Low R_DS(on)	1.36 mΩ at 25 °C - reduces I²R losses to ≤0.115 W at full rated current, improving system efficiency in high-power load switches
CCPAK1212 copper-clip construction	JEDEC SOT8000A footprint - ensures mechanical and thermal interoperability with alternate suppliers and simplifies board-level qualification
Avalanche ruggedness	1130 mJ E_AS with 100% production test - guarantees reliability during unclamped inductive switching events in e-fuse applications
High-temperature qualification	175 °C T_j rating - supports operation in sealed telecom enclosures with minimal airflow and elevated ambient temperatures

Applications

Hot Swap Controller Interface

48 V Telecom Backplane Protection

Use Scenario: Insertion of line cards into live 48 V backplane without causing bus voltage droop or controller fault.

IC Role / Device Role / Timing Role: Main power FET in hot-swap circuit, operating in linear mode during ramp-up to limit inrush current to <100 A over 10 ms.

Use Value: Enhanced SOA allows sustained linear operation without thermal runaway, eliminating need for complex current-sense feedback loops.

Use Scenario: Isolation of faulty downstream modules on a shared 48 V supply rail to prevent cascading failure.

IC Role / Device Role / Timing Role: Load switch controlled by digital supervisor IC, turning OFF within 100 µs upon overcurrent detection.

Use Value: 1130 mJ avalanche energy rating absorbs stored inductive energy during fast turn-off, preventing destructive voltage spikes.

Soft-Start Power Sequencing

E-Fuse Current Limiting

Use Scenario: Gradual ramp-up of power to high-capacitance loads (e.g., server VRMs) to avoid tripping upstream breakers.

IC Role / Device Role / Timing Role: Linear-mode pass element controlled by analog feedback loop to regulate dV/dt across output capacitor bank.

Use Value: Stable V_GS(th) temperature coefficient (-6.55 mV/K) maintains consistent turn-on timing across -40 °C to +85 °C ambient.

Use Scenario: Replace electromechanical fuses in industrial PLC I/O modules with resettable electronic protection.

IC Role / Device Role / Timing Role: Bidirectional current limiter using integrated source-drain diode and precise R_DS(on)-based current sensing.

Use Value: 84 nC Q_r and 62 ns t_rr minimize switching losses during repeated fault-clearing cycles, extending service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTN340N10L2	100 V, 340 A, 1.2 mΩ R_DS(on), TO-264 package - higher R_th(j-c) (0.25 K/W), no JEDEC-standardized footprint	Requires custom heatsink mounting; not drop-in compatible with CCPAK1212 PCB layout	Select when legacy TO-264 mechanical integration is required and thermal interface uses insulating pads.
STW72N10F7	100 V, 120 A, 3.2 mΩ R_DS(on), TO-247 package - lower current rating, higher conduction loss, 175 °C rated	Not suitable for 340 A continuous operation; requires parallel devices for equivalent current handling	Select only for cost-sensitive designs where peak current remains below 120 A and board space permits larger TO-247 footprint.

Compared with IXTN340N10L2 and STW72N10F7, PSMN1R4-100ASEJ provides superior thermal performance via its 0.123 K/W R_th(j-mb) and JEDEC-standardized CCPAK1212 footprint, enabling higher power density and simplified second-source procurement in telecom hot-swap modules.

Availability

PSMN1R4-100ASEJ is available at Aetrix Electronics and suitable for hot-swap controller interfaces, 48 V telecom backplane protection, and soft-start power sequencing requiring stable component supply, JEDEC-compliant packaging, and high-temperature reliability.

Supply support for PSMN1R4-100ASEJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and computing markets with ISO/TS 16949-certified manufacturing.

This part belongs to Nexperia's Application Specific MOSFETs (ASFETs) product line, engineered specifically for hot-swap and soft-start functions where SOA robustness, low R_DS(on), and copper-clip thermal performance are prioritized over general-purpose switching speed.

FAQ

What is the maximum continuous drain current for PSMN1R4-100ASEJ at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 340 A per Figure 2 of the datasheet - identical to the 25 °C rating because the curve shows flat current capability up to 100 °C due to the low R_th(j-mb) and high thermal mass of the CCPAK1212 package. Practical limits are set by PCB copper area and ambient airflow.

Does PSMN1R4-100ASEJ require a negative gate voltage for reliable turn-off in high-dv/dt environments?

No. The device has a V_GS rating of ±20 V and demonstrates stable turn-off with 0 V gate drive. Its gate threshold voltage (2.0–3.6 V) and 1.01 Ω typical gate resistance ensure immunity to dv/dt-induced false turn-on without requiring active gate pull-down below 0 V in telecom hot-swap applications.

Can PSMN1R4-100ASEJ be used in synchronous rectification topologies?

Yes - its integrated source-drain diode has 84 nC recovered charge and 62 ns reverse recovery time at 25 °C, enabling efficient synchronous operation in DC-DC converters up to 300 kHz. However, the body diode forward voltage (0.77 V) is higher than dedicated Schottky alternatives, so conduction losses must be evaluated against MOSFET R_DS(on) in the chosen duty cycle.

Is the mounting base (mb) electrically isolated from the drain terminals?

No - the mounting base is internally connected to the drain (D) and forms part of the 12-terminal drain network. This configuration provides both low-inductance power conduction and optimal thermal transfer to the heatsink or PCB copper plane, but requires electrical isolation of the heatsink or use of insulated thermal interface materials if the drain node is not at chassis ground potential.

PSMN1R4-100ASEJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 340A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.36mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 366 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 26023 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 935W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CCPAK1212

PSMN1R4-100ASEJ FAQ

1.How can I place an order for PSMN1R4-100ASEJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R4-100ASEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R4-100ASEJ reliable?

The price and inventory of PSMN1R4-100ASEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R4-100ASEJ is usually 5 days.

3.What payment methods are accepted for PSMN1R4-100ASEJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R4-100ASEJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R4-100ASEJ?

PSMN1R4-100ASEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R4-100ASEJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R4-100ASEJ?

For technical support, including PSMN1R4-100ASEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R4-100ASEJ requirements.

6.How does Aetrix verify that PSMN1R4-100ASEJ is sourced from the original manufacturer or authorized distributors?

All PSMN1R4-100ASEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R4-100ASEJ meets industry standards.

7.What is the process for return or replacement of PSMN1R4-100ASEJ?

All PSMN1R4-100ASEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R4-100ASEJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R4-100ASEJ part is unused and in its original packaging.

Return procedure for PSMN1R4-100ASEJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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