My Inquiry
My Account
Nexperia USA Inc. PSMN1R4-30YLD/1X
- Part No.:
- PSMN1R4-30YLD/1X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
PSMN1R4-30YLD/1X.pdf
- Description:
- MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,689
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PSMN1R4-30YLD from Nexperia is an N-channel 30 V, 1.4 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, engineered for high-efficiency synchronous rectification and DC-DC conversion at switching frequencies up to several MHz. It delivers RDS(on) = 1.11 mΩ @ VGS = 10 V, 25 °C; QG(tot) = 27.6 nC @ VGS = 4.5 V; and soft-recovery s-factor > 0.99 - enabling low EMI and high-density power delivery in server VRMs and telecom POL modules.
For engineers reviewing the PSMN1R4-30YLD datasheet, PSMN1R4-30YLD pinout, PSMN1R4-30YLD application, or PSMN1R4-30YLD equivalent, this page provides verified electrical parameters, thermal performance data (Rth(j-mb) = 0.81 K/W), LFPAK56 mounting base layout guidance, and validated alternatives for high-frequency, low-RDS(on) power switching designs.
Technical Context
This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode integration, delivering Schottky-like reverse recovery (trr = 38.6 ns, Qr = 34 nC) while maintaining ultra-low leakage (<1 µA @ 25 °C). Its gate threshold voltage (VGS(th) = 1.2–2.2 V) and optimized transconductance support robust 4.5 V logic-level drive.
The LFPAK56 package uses clip-bonded die attach and exposed mounting base (drain-connected), eliminating wire bonds and adhesive. This yields low parasitic inductance, Rth(j-mb) = 0.81 K/W, and 175 °C junction rating - critical for thermally constrained high-current applications like GPU power delivery and motor control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - defines safe blocking capability in 24 V bus and 12 V intermediate bus systems. |
| RDS(on) | 1.11 mΩ @ VGS = 10 V, 25 °C - enables <1 W conduction loss at 30 A, supporting high-current POLs without forced air cooling. |
| QG(tot) | 27.6 nC @ VGS = 4.5 V - minimizes gate drive power and supports efficient operation above 500 kHz switching frequency. |
| trr / Qr | 38.6 ns / 34 nC - ensures fast, soft reverse recovery essential for low-voltage synchronous rectification with minimal switching loss. |
| Rth(j-mb) | 0.81 K/W - allows direct thermal coupling to PCB copper or heatsink via exposed mounting base, enabling >100 W continuous dissipation at Tmb = 25 °C. |
| ID | 100 A continuous @ Tmb = 25 °C - limited by package thermal capacity, not silicon, confirming suitability for high-current VRM phases. |
| VGS(th) | 1.2–2.2 V - guarantees full enhancement under standard 3.3 V/5 V logic drive, eliminating need for level-shifting gate drivers. |
Pinout & Package
LFPAK56 (SOT669) is a surface-mount, clip-bonded Power-SO8 variant with exposed copper mounting base (drain-connected) and no wire bonds or die attach glue. It features wave-solderable leads and qualifies to 175 °C junction temperature.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectifier operation. |
| 4 | Gate (G) | Single low-inductance gate input optimized for 4.5 V logic-level drive; RG = 1.1 Ω supports fast edge rates with minimal ringing. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current return node - requires soldered PCB thermal pad. |
Key Features
| Feature | Design Value |
|---|---|
| "SchottkyPlus" body diode | Soft reverse recovery (s-factor = 0.99) with <1 µA leakage at 25 °C - eliminates trade-off between low Qr and high leakage in conventional Schottky-integrated MOSFETs. |
| Ultra-low QG, QGD, QOSS | QGD = 8.5 nC @ VGS = 4.5 V - reduces Miller-induced switching delay and improves hard-switching efficiency in buck converters. |
| Optimized for 4.5 V gate drive | VGS(th) = 1.7 V typ., RDS(on) = 1.44 mΩ @ VGS = 4.5 V - ensures full enhancement and low on-resistance using standard microcontroller GPIO or PWM controller outputs. |
| High-reliability construction | Clip-bonded die + solder die attach, no wire bonds or epoxy - achieves 175 °C qualification and superior power cycling endurance vs. traditional SO-8. |
| Low parasitic inductance/resistance | LFPAK56 layout minimizes Lsource and RDS(on) contribution from interconnect - critical for minimizing voltage spikes in high-di/dt synchronous rectification. |
Applications
| Server On-Board DC-DC | Telecom Secondary-Side SR |
|---|---|
|
Use Scenario: High-current, high-frequency buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V intermediate bus in rack-mounted servers. IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 500 kHz–1 MHz, replacing Schottky diodes to reduce conduction loss and improve system efficiency. Use Value: 1.11 mΩ RDS(on) cuts conduction loss by >60% vs. 3 mΩ alternatives; soft recovery suppresses EMI during zero-voltage switching transitions. |
Use Scenario: Secondary-side synchronous rectification in isolated 48 V-to-12 V telecom DC-DC converters for base station power supplies. IC Role / Device Role / Timing Role: Low-VDS N-channel switch driven by transformer-coupled gate signal, conducting during secondary winding positive half-cycle. Use Value: 38.6 ns trr and 34 nC Qr minimize reverse recovery loss; 30 V rating accommodates transient overshoot on 12 V output rails. |
| VRM Voltage Regulator Module | Brushless Motor Control |
|
Use Scenario: Multiphase VRM delivering >200 A to ASIC/FPGA with tight regulation and dynamic load response requirements. IC Role / Device Role / Timing Role: High-side or low-side power stage switch in each phase leg, synchronized to multi-phase PWM controller. Use Value: 100 A continuous rating per device enables compact 3–4 phase designs; 0.81 K/W Rth(j-mb) allows direct thermal coupling to VRM heatsink. |
Use Scenario: Half-bridge or 3-phase inverter driving BLDC motors in industrial automation equipment requiring high torque density and low acoustic noise. IC Role / Device Role / Timing Role: Low-side switch in inverter leg, commutated at 20–100 kHz with precise dead-time control to prevent shoot-through. Use Value: Fast turn-on (td(on) = 23 ns) and rise time (tr = 28 ns) enable precise PWM timing; low QG reduces gate driver stress and heat generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency, low-RDS(on) N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | RDS(on) = 1.4 mΩ @ 10 V, 25 °C; QG(tot) = 31 nC @ 4.5 V; TO-263 package with higher Rth(j-a). | Higher thermal resistance limits power density in space-constrained POL modules; less suitable for wave soldering. | Select when board-level thermal management favors through-hole heatsinking over PCB copper spread. |
| Vishay SiR626DP | RDS(on) = 1.3 mΩ @ 10 V, 25 °C; QG(tot) = 29.5 nC @ 4.5 V; PowerPAK SO-8 with wire-bonded construction. | Higher parasitic inductance and lower 150 °C max junction rating reduce reliability in high-di/dt telecom rectifiers. | Select when cost sensitivity outweighs soft-recovery and 175 °C qualification requirements. |
Compared with BSC014N04LS6 and SiR626DP, PSMN1R4-30YLD offers superior thermal performance (0.81 K/W vs. ≥1.2 K/W), lower gate charge (27.6 nC), and SchottkyPlus soft recovery - making it optimal for high-power-density, high-frequency synchronous rectification where EMI and thermal headroom are critical.
Availability
PSMN1R4-30YLD is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom synchronous rectification, and VRM power delivery requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.
Supply support for PSMN1R4-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.
PSMN1R4-30YLD belongs to the NextPowerS3 portfolio, designed specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial motor control applications where low RDS(on), fast switching, and soft recovery are mandatory.
FAQ
What is the maximum continuous drain current for PSMN1R4-30YLD at 100 °C mounting base temperature?
At Tmb = 100 °C, the continuous drain current is rated at 100 A - identical to its 25 °C rating - because thermal derating is governed by the package's ability to dissipate power via the mounting base, not silicon current density limits. This reflects the LFPAK56's exceptional thermal design.
Does PSMN1R4-30YLD require a negative gate voltage for reliable turn-off in high-noise environments?
No. The device has a gate-source voltage rating of ±20 V and exhibits stable turn-off down to VGS = 0 V due to its well-controlled VGS(th) (1.2–2.2 V) and low gate leakage (<100 nA). A negative gate bias is unnecessary unless operating near absolute maximum ratings in extreme EMI conditions.
How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode in practical circuit behavior?
The "SchottkyPlus" diode delivers soft reverse recovery (s-factor = 0.99) and low Qr (34 nC) like a Schottky, but with leakage <1 µA at 25 °C - unlike true Schottky diodes that typically leak >100 µA. This enables synchronous rectifier operation without compromising light-load efficiency or thermal stability.
Can PSMN1R4-30YLD be used in linear mode (e.g., electronic load or hot-swap controller)?
No. While rated for 175 °C junction temperature, its Safe Operating Area (SOA) curve shows limited linear-mode capability: at VDS = 10 V, maximum pulsed current drops to ~100 A for 10 µs, and continuous linear operation is not characterized or guaranteed. It is optimized for switched-mode operation only.
PSMN1R4-30YLD/1X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
PSMN1R4-30YLD/1X FAQ
1.How can I place an order for PSMN1R4-30YLD/1X through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R4-30YLD/1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R4-30YLD/1X reliable?
The price and inventory of PSMN1R4-30YLD/1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R4-30YLD/1X is usually 5 days.
3.What payment methods are accepted for PSMN1R4-30YLD/1X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R4-30YLD/1X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R4-30YLD/1X?
PSMN1R4-30YLD/1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R4-30YLD/1X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R4-30YLD/1X?
For technical support, including PSMN1R4-30YLD/1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R4-30YLD/1X requirements.
6.How does Aetrix verify that PSMN1R4-30YLD/1X is sourced from the original manufacturer or authorized distributors?
All PSMN1R4-30YLD/1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R4-30YLD/1X meets industry standards.
7.What is the process for return or replacement of PSMN1R4-30YLD/1X?
All PSMN1R4-30YLD/1X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R4-30YLD/1X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R4-30YLD/1X part is unused and in its original packaging.
Return procedure for PSMN1R4-30YLD/1X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PSMN1R4-30YLD/1X Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
