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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R4-30YLD/2X

Name: PSMN1R4-30YLD/2X
Brand: Nexperia USA Inc.
SKU: PSMN1R4-30YLD/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R4-30YLD/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R4-30YLD/2X.pdf

Description:: PSMN1R4-30YLD/SOT669/LFPAK

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Product details

Overview

PSMN1R4-30YLD from Nexperia is an N-channel 30 V logic-level power MOSFET in LFPAK56 (SOT669) package, featuring 1.4 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, ultra-low Q_G (27.6 nC at 4.5 V), and SchottkyPlus body diode with soft-recovery (s-factor > 0.99). It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters for server and telecom infrastructure.

For engineers reviewing the PSMN1R4-30YLD datasheet, PSMN1R4-30YLD pinout, PSMN1R4-30YLD application, or PSMN1R4-30YLD equivalent, key selection criteria include gate-drive compatibility at 4.5 V, thermal resistance to mounting base (0.81 K/W), avalanche ruggedness (653 mJ), and LFPAK56 package suitability for high-current, low-inductance PCB layouts.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with SchottkyPlus technology-enabling Schottky-like reverse recovery performance (t_rr = 38.6 ns, Q_r = 34 nC) while maintaining < 1 µA leakage at 25 °C. Its optimized gate charge profile (Q_GD = 8.5 nC at 4.5 V) minimizes switching losses in hard-switched topologies.

The device is rated for continuous drain current up to 100 A at T_mb = 25 °C, with junction temperature range from –55 °C to 175 °C and peak avalanche energy of 653 mJ under unclamped inductive switching. The clip-bonded, solder-die-attach construction eliminates wire bonds and glue, supporting wave soldering and 175 °C qualification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe operating voltage ceiling in buck, boost, and OR-ing applications.
R_DS(on)	1.11 mΩ typical at V_GS = 10 V, T_j = 25 °C - enables < 1.2 W conduction loss at 100 A, critical for POL and VRM efficiency.
Q_G(tot)	27.6 nC at V_GS = 4.5 V - supports fast turn-on with low gate driver power demand in high-frequency (>500 kHz) converters.
t_rr	38.6 ns typical - reduces diode recovery loss and EMI in synchronous rectification and half-bridge configurations.
R_th(j-mb)	0.81 K/W typical - allows direct thermal coupling to heatsink or copper plane, enabling >100 W dissipation with modest ΔT.
I_D	100 A continuous at T_mb = 25 °C - limited by package thermal capacity, not silicon, confirming LFPAK56's high-current capability.
E_AS	653 mJ non-repetitive avalanche energy - provides robustness against inductive switching transients without external snubbers.

Pinout & Package

LFPAK56 (SOT669) is a leadless, clip-bonded surface-mount package with exposed mounting base connected to drain, optimized for low parasitic inductance and high thermal conductivity. It features wave-solderable leads and visual solder inspection capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with low RG (1.1 Ω) - ensures stable drive and minimal gate oscillation in high-speed operation.
Mounting Base	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return node.

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft reverse recovery (s-factor = 0.99) with < 1 µA leakage at 25 °C - eliminates trade-off between low Q_r and high leakage in conventional MOSFETs.
Ultra-low Q_G/Q_GD	27.6 nC total gate charge and 8.5 nC gate-drain charge at 4.5 V - enables efficient 4.5 V logic-level drive and reduces Miller-induced shoot-through risk.
Clip-bonded construction	No wire bonds or die attach glue - achieves 175 °C qualification and superior power cycling reliability vs. standard SO-8.
Low parasitic inductance	Optimized internal layout and triple-source configuration - suppresses voltage spikes and ringing during hard switching.
Wave solderable leads	Exposed coplanar leads - enable automated optical inspection and eliminate voiding concerns common in thermal-pad-only packages.

Applications

Server DC-DC Conversion

Telecom Secondary-Side Rectification

Use Scenario: High-density 12 V–to–1 V point-of-load conversion in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in multiphase buck converter, switching at 600–800 kHz.

Use Value: 1.11 mΩ R_DS(on) and 38.6 ns t_rr reduce conduction + recovery losses by >15% vs. legacy MOSFETs, improving system efficiency at 40–60 A per phase.

Use Scenario: Secondary-side synchronous rectification in 48 V–to–12 V isolated DC-DC modules for telecom base stations.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diodes in forward or LLC resonant converters.

Use Value: SchottkyPlus diode delivers < 0.8 V V_SD and soft recovery, cutting diode conduction loss by ~40% and eliminating snubber components.

VRM Power Delivery

Power OR-ing

Use Scenario: Voltage regulator module supplying GPU and ASIC cores in AI accelerators.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power stage switch operating with 3.3 V or 5 V gate drive.

Use Value: 100 A continuous rating and 0.81 K/W R_th(j-mb) support >300 W per phase without forced air, enabling compact VRM designs.

Use Scenario: Redundant 12 V power rail combining in enterprise storage controllers.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode for hot-swap and fault isolation.

Use Value: Ultra-low R_DS(on) minimizes forward voltage drop (< 10 mV at 50 A), reducing power loss and thermal stress vs. discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN2R0-30YLC	Higher R_DS(on) (2.0 mΩ typ. at 10 V), same LFPAK56 package and SchottkyPlus diode.	Better suited for cost-sensitive, lower-current (< 60 A) POL modules where marginally higher loss is acceptable.	Select when thermal budget allows higher on-resistance and gate charge is secondary to BOM cost.
IRLHS6342	SO-8 package (not LFPAK56), 1.7 mΩ R_DS(on), no SchottkyPlus diode (t_rr = 65 ns, Q_r = 62 nC).	Limited to < 50 A continuous due to higher R_th(j-a); unsuitable for high-frequency synchronous rectification.	Choose only if legacy SO-8 footprint must be retained and soft recovery is not required.

Compared with PSMN2R0-30YLC, PSMN1R4-30YLD delivers 30% lower conduction loss and faster switching, justifying its use in high-power density designs; versus IRLHS6342, it offers superior thermal performance, lower EMI, and integrated soft-recovery-making it the preferred choice for next-gen telecom and server power stages.

Availability

PSMN1R4-30YLD is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom secondary-side rectification, and VRM power delivery requiring stable component supply across industrial and datacenter production programs.

Supply support for PSMN1R4-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and AI infrastructure where low R_DS(on), soft-recovery, and thermal robustness are critical.

FAQ

What gate drive voltage is required for full enhancement?

PSMN1R4-30YLD is specified as a logic-level MOSFET with V_GS(th) of 1.2–2.2 V and is fully enhanced at V_GS = 4.5 V, delivering R_DS(on) = 1.44 mΩ (typ.) at 25 °C. At 10 V, R_DS(on) drops to 1.11 mΩ (typ.), but 4.5 V drive is sufficient for most high-efficiency applications including VRMs and POL converters.

How does the SchottkyPlus body diode differ from a standard MOSFET body diode?

The SchottkyPlus diode achieves soft reverse recovery (s-factor = 0.99) and low Q_r (34 nC) without elevated leakage-delivering < 1 µA I_DSS at 25 °C. Unlike conventional body diodes or integrated Schottky diodes, it avoids the high leakage penalty while matching Schottky-like t_rr (38.6 ns) and V_SD (~0.79 V).

Can PSMN1R4-30YLD be used in avalanche conditions?

Yes-it is 100% tested for non-repetitive avalanche energy (E_AS) up to 653 mJ at T_j(init) = 25 °C, with V_DS ≤ 30 V and I_D = 25 A. This ruggedness supports reliable operation in inductive switching circuits such as OR-ing and motor control without external clamping.

Is the LFPAK56 package compatible with standard SO-8 reflow profiles?

Yes-the LFPAK56 (SOT669) package is qualified for standard lead-free reflow (JEDEC J-STD-020) and wave soldering. Its exposed mounting base and coplanar leads support both processes, and the absence of wire bonds eliminates mechanical stress risks during thermal cycling.

PSMN1R4-30YLD/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.42mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 54.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3840 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R4-30YLD/2X FAQ

1.How can I place an order for PSMN1R4-30YLD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R4-30YLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R4-30YLD/2X reliable?

The price and inventory of PSMN1R4-30YLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R4-30YLD/2X is usually 5 days.

3.What payment methods are accepted for PSMN1R4-30YLD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R4-30YLD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R4-30YLD/2X?

PSMN1R4-30YLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R4-30YLD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R4-30YLD/2X?

For technical support, including PSMN1R4-30YLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R4-30YLD/2X requirements.

6.How does Aetrix verify that PSMN1R4-30YLD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN1R4-30YLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R4-30YLD/2X meets industry standards.

7.What is the process for return or replacement of PSMN1R4-30YLD/2X?

All PSMN1R4-30YLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R4-30YLD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R4-30YLD/2X part is unused and in its original packaging.

Return procedure for PSMN1R4-30YLD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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