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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R4-30YLDX

Name: PSMN1R4-30YLDX
Brand: Nexperia USA Inc.
SKU: PSMN1R4-30YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R4-30YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R4-30YLDX.pdf

Description:: MOSFET N-CH 30V 100A LFPAK56

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN1R4-30YLD from Nexperia is an N-channel 30 V, 1.4 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, engineered for high-efficiency synchronous rectification and power delivery in server/telecom DC-DC converters. It delivers R_DS(on) = 1.11 mΩ @ 10 V, Q_G(tot) = 27.6 nC @ 4.5 V, and soft-recovery diode performance (s-factor = 0.99) with <1 µA leakage at 25 °C.

For engineers reviewing the PSMN1R4-30YLD datasheet, PSMN1R4-30YLD pinout, PSMN1R4-30YLD application, or PSMN1R4-30YLD equivalent, key selection criteria include low gate charge for high-frequency switching, ultra-low on-resistance at 4.5 V drive, thermal robustness up to 175 °C junction temperature, and Schottky-like diode softness without elevated leakage.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology-integrating a soft-recovery intrinsic body diode that achieves s-factor > 0.99 and reverse recovery charge Q_r = 34 nC while maintaining IDSS < 1 µA at 25 °C. Its LFPAK56 clip-bonded construction eliminates wire bonds and adhesive, enabling R_th(j-mb) = 0.81 K/W and 166 W power dissipation at T_mb = 25 °C.

The device is optimized for 4.5 V gate drive, with V_GS(th) = 1.7 V (typ), ΔV_GS(th)/ΔT = −4.6 mV/K, and R_DS(on) = 1.44 mΩ @ 4.5 V/25 A/25 °C. Dynamic parameters include C_iss = 3840 pF, C_oss = 1785 pF, and t_r = 28 ns, supporting clean switching in POL and VRM topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V/24 V bus applications
R_DS(on) @ 4.5 V	1.44 mΩ (typ) - Enables efficient operation with standard logic-level drivers
Q_G(tot) @ 4.5 V	27.6 nC - Low gate charge reduces driver loss and enables >1 MHz switching
s-factor	0.99 - Soft reverse recovery minimizes EMI and voltage spikes in synchronous rectifiers
R_th(j-mb)	0.81 K/W - High thermal conductivity supports high-power density mounting on PCB copper pads
I_D (cont)	100 A - Continuous current rating limited by package thermal capability at T_mb = 25 °C
V_GS(th)	1.7 V (typ) - Ensures reliable turn-on with 3.3 V or 5 V control logic

Pinout & Package

LFPAK56 (SOT669) is a clip-bonded, solder-die-attached Power-SO8 variant with exposed mounting base (drain-connected) and wave-solderable leads. It eliminates wire bonds and organic adhesives, achieving 175 °C qualification and low parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce conduction resistance and improve current sharing
4	Gate (G)	Single gate input with low RG = 1.1 Ω for fast, controlled edge rates
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically connected to drain; primary thermal path to PCB

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft recovery (s = 0.99) with Q_r = 34 nC and IDSS < 1 µA @ 25 °C-enables high-efficiency SR without external Schottky
Ultra-low Q_G, Q_GD, Q_OSS	Q_G(tot) = 27.6 nC @ 4.5 V; Q_GD = 8.5 nC-reduces switching loss and EMI in high-frequency POL converters
Optimized 4.5 V drive	R_DS(on) = 1.44 mΩ @ 4.5 V/25 A-ensures full enhancement with standard microcontroller GPIO or PWM drivers
Clip-bonded LFPAK56	No wire bonds or glue; qualified to 175 °C-delivers high reliability in thermally stressed telecom/server environments
Low-inductance layout	Minimized source inductance via triple-source pins and exposed drain pad-reduces ringing and improves stability in hard-switched topologies

Applications

Server DC-DC Conversion

Telecom Secondary-Side SR

Use Scenario: Point-of-load regulation in high-density server motherboards delivering 12 V → 1.8 V to CPUs/GPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converters operating at 500 kHz–1 MHz.

Use Value: 1.44 mΩ R_DS(on) @ 4.5 V and soft diode recovery reduce conduction + switching losses, improving system efficiency by ≥1.2% vs. standard MOSFETs.

Use Scenario: Secondary-side rectification in telecom AC-DC front-end PSUs feeding 48 V intermediate bus.

IC Role / Device Role / Timing Role: Low-voltage, high-current switch in active clamp forward or LLC resonant converters.

Use Value: Q_G(tot) = 27.6 nC and s-factor = 0.99 minimize gate drive loss and output voltage overshoot during zero-voltage switching transitions.

VRM Power Delivery

Power OR-ing

Use Scenario: Voltage regulator module supplying core voltage to ASICs and FPGAs in networking equipment.

IC Role / Device Role / Timing Role: High-side or low-side switch in multi-phase buck regulators with digital PWM controllers.

Use Value: Triple-source pin configuration lowers effective source inductance, improving transient response and reducing output voltage ripple under dynamic load steps.

Use Scenario: Redundant 12 V power path selection in industrial PLC backplanes with hot-swap capability.

IC Role / Device Role / Timing Role: Ideal diode replacement in discrete OR-ing circuits using external gate control.

Use Value: Ultra-low V_SD = 0.79 V (typ) and fast t_rr = 38.6 ns enable near-lossless reverse-blocking and rapid fault isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN2R0-30YLC	R_DS(on) = 2.0 mΩ @ 4.5 V; Q_G(tot) = 22.5 nC; same LFPAK56 package	Higher on-resistance but lower gate charge-better for very high-frequency (>2 MHz) low-current POL stages	Select when prioritizing gate drive efficiency over conduction loss in sub-30 A loads.
IPB110N15N3G	150 V rating; R_DS(on) = 1.1 mΩ @ 10 V; TO-263 package; no SchottkyPlus diode	Higher voltage capability but lacks soft-recovery diode-requires external freewheeling diode in SR designs	Choose only for 48 V bus applications where 30 V rating is insufficient; not drop-in for PSMN1R4-30YLD SR roles.

Compared with PSMN2R0-30YLC, PSMN1R4-30YLD trades 0.6 mΩ lower R_DS(on) for 5.1 nC higher Q_G, favoring high-current efficiency; versus IPB110N15N3G, it offers integrated soft diode and 30 V optimization for compact 12 V systems, eliminating external diode cost and layout area.

Availability

PSMN1R4-30YLD is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom secondary-side synchronous rectification, and VRM power delivery requiring stable component supply across extended production lifecycles.

Supply support for PSMN1R4-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and computing markets.

PSMN1R4-30YLD belongs to the NextPowerS3 portfolio-designed specifically for high-efficiency, high-frequency power conversion in datacenter and telecom infrastructure where low R_DS(on), soft diode recovery, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for PSMN1R4-30YLD at 100 °C mounting base temperature?

The maximum continuous drain current is 100 A at T_mb = 100 °C, as specified in the datasheet Figure 2. This rating is package-limited and assumes proper PCB copper area and thermal management per the recommended footprint in Figure 6. Derating applies above 100 °C mounting base temperature.

Does PSMN1R4-30YLD require a gate resistor for stable operation in a 1 MHz buck converter?

A gate resistor is recommended to dampen ringing and control dV/dt, especially given its low gate resistance (R_G = 1.1 Ω) and high-speed switching (t_r = 28 ns). Typical values range from 2.2 Ω to 10 Ω depending on driver strength and layout parasitics-verified in Nexperia's application note AN11158 for LFPAK56 MOSFETs.

How does the "SchottkyPlus" diode compare to a discrete Schottky in terms of reverse leakage?

The integrated SchottkyPlus diode maintains IDSS < 1 µA at 25 °C and 1.4 µA at 125 °C-significantly lower than typical discrete Schottky diodes (often >100 µA at 125 °C). This enables use in high-temperature telecom environments without thermal runaway risk or efficiency penalty.

Can PSMN1R4-30YLD be used in linear mode (e.g., electronic load or LDO pass element)?

No-it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) curve (Figure 3) shows pulsed current limits only, and the device lacks SOA-rated linear operation data. Its design targets switched-mode applications with defined duty cycles and thermal cycling profiles.

PSMN1R4-30YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.42mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 54.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3840 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R4-30YLDX FAQ

1.How can I place an order for PSMN1R4-30YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R4-30YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R4-30YLDX reliable?

The price and inventory of PSMN1R4-30YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R4-30YLDX is usually 5 days.

3.What payment methods are accepted for PSMN1R4-30YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R4-30YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R4-30YLDX?

PSMN1R4-30YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R4-30YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R4-30YLDX?

For technical support, including PSMN1R4-30YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R4-30YLDX requirements.

6.How does Aetrix verify that PSMN1R4-30YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN1R4-30YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R4-30YLDX meets industry standards.

7.What is the process for return or replacement of PSMN1R4-30YLDX?

All PSMN1R4-30YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R4-30YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R4-30YLDX part is unused and in its original packaging.

Return procedure for PSMN1R4-30YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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