Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PSMN1R4-40YLD/2X

Part No.:
PSMN1R4-40YLD/2X
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixPSMN1R4-40YLD/2X.pdf
Description:
PSMN1R4-40YLD/SOT669/LFPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,582

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PSMN1R4-40YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V VDS, 1.4 mΩ RDS(on) at VGS = 10 V and 25 A, 240 A continuous drain current capability at Tmb = 25 °C, and qualified to 175 °C junction temperature - deployed in high-efficiency server power supplies and synchronous rectification stages.

For engineers reviewing the PSMN1R4-40YLD datasheet, PSMN1R4-40YLD pinout, PSMN1R4-40YLD application, or PSMN1R4-40YLD equivalent, this page delivers verified electrical parameters, LFPAK56 terminal mapping, NextPower-S3 switching behavior, Schottky-Plus body-diode performance, and thermal resistance data for PCB layout validation.

Technical Context

This MOSFET uses Nexperia's NextPower-S3 Superjunction TrenchMOS technology, enabling superfast switching with soft recovery and low QGD (13–26 nC) and QG(tot) (45–65 nC at 4.5 V drive). Its Schottky-Plus body diode delivers soft reverse recovery (trr = 47 ns, Qr = 61 nC) without elevated IDSS leakage.

Optimized for 4.5 V gate drive, it achieves RDS(on) = 1.38–1.85 mΩ at 25 °C and maintains 3.4 mΩ at 175 °C. Thermal resistance from junction to mounting base is 0.56–0.63 K/W, supporting high-power density designs with copper-clip LFPAK56 construction.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum drain-source voltage - defines safe blocking capability in 12 V/48 V bus applications.
RDS(on) 1.4 mΩ typical at VGS = 10 V, 25 A, 25 °C - enables <1.4 W conduction loss at 240 A with proper thermal design.
ID (cont) 240 A at Tmb = 25 °C - validated continuous current rating, limited by PCB copper area and heatsinking.
QG(tot) 45–65 nC at VGS = 4.5 V - determines gate driver power and switching speed in high-frequency DC-DC converters.
trr 47 ns typical - supports zero-voltage switching (ZVS) topologies with minimal switching loss and EMI.
Rth(j-mb) 0.56–0.63 K/W - enables direct thermal coupling to heatsink or copper plane, critical for >100 W dissipation.
VGS(th) 1.05–2.2 V - ensures full enhancement at logic-level 3.3 V/4.5 V drivers without level-shifting.

Pinout & Package

LFPAK56 (SOT669) is a copper-clip, solder-die-attached surface-mount package with exposed mounting base connected to drain, optimized for low parasitic inductance/resistance and wave-solderable leads. It features a 4-pin configuration with three parallel source terminals and one gate terminal.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three paralleled source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4 Gate (G) Single gate input with low RG (1.1–3.43 Ω) - compatible with standard logic-level gate drivers.
Mounting Base (mb) Drain (D) Exposed copper drain pad - provides primary thermal path to PCB and enables high-current drain connection.

Key Features

Feature Design Value
Avalanche-rated, 100% tested IAS = 190 A - enables robust operation under inductive load switching without external snubbers.
Schottky-Plus body diode trr = 47 ns, Qr = 61 nC, VSD = 0.78–1.2 V - delivers soft recovery with low forward drop and no high IDSS penalty.
NextPower-S3 technology QGD/QG(tot) ratio ≤ 0.3 - improves Miller immunity and reduces switching losses in hard-switched topologies.
175 °C qualified LFPAK56 Rth(j-mb) = 0.56 K/W - supports sustained operation in high-ambient environments like server VRMs and motor drives.
Optimized for 4.5 V drive RDS(on) = 1.38 mΩ typ. at VGS = 4.5 V - eliminates need for 10 V gate bias in modern controller ICs.

Applications

Synchronous Rectification High-Efficiency Server PSU

Use Scenario: Secondary-side switch in isolated LLC resonant converter delivering 500 W–2 kW output.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diode, operating at 300–1000 kHz with ZVS edge alignment.

Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, enabling >96% efficiency at full load with 1.4 mΩ RDS(on).

Use Scenario: Primary-side high-side switch in multiphase buck converter for CPU/GPU VRM in AI servers.

IC Role / Device Role / Timing Role: High-current power stage switch handling up to 240 A per phase with tight dead-time control.

Use Value: Enables phase interleaving with <50 ns turn-off delay and low QGD, minimizing shoot-through risk and improving transient response.

Motor Control (BLDC Inverter) Power OR-ing

Use Scenario: Half-bridge leg in 48 V BLDC motor drive for industrial automation, operating at 20–50 kHz PWM.

IC Role / Device Role / Timing Role: Low-RDS(on) N-channel switch in 3-phase inverter bridge, paired with bootstrap gate driver.

Use Value: Delivers <0.5 W conduction loss at 100 A RMS while maintaining soft body-diode recovery during commutation.

Use Scenario: Ideal diode replacement in redundant 12 V/48 V power distribution for telecom equipment.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing bidirectional OR-ing with fast fault isolation.

Use Value: Achieves <1.5 mV forward drop at 100 A (vs. 300–400 mV for Schottky), reducing heat generation and improving system uptime.

Availability

PSMN1R4-40YLD is available at Aetrix Electronics and suitable for high-current synchronous rectification, server power supply design, and motor control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN1R4-40YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in power MOSFETs, ESD protection, and automotive-qualified components.

This device belongs to Nexperia's NextPower-S3 portfolio - engineered specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and telecom infrastructure where low RDS(on), soft switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for PSMN1R4-40YLD under real-world PCB conditions?

The datasheet specifies 240 A at Tmb = 25 °C with ideal thermal mounting. In practice, achievable current depends on PCB copper area (e.g., 1"² 2 oz Cu pad yields ~150 A), ambient temperature, and airflow. At Tmb = 100 °C, rated current drops to 214 A per Figure 2.

Does PSMN1R4-40YLD support 3.3 V gate drive?

No - while VGS(th) starts at 1.05 V, the device requires ≥4.5 V for full enhancement. At VGS = 3.3 V, RDS(on) rises above 3 mΩ (per Figure 8), increasing conduction loss significantly. It is designed for 4.5 V or 5 V logic-level drivers, not 3.3 V systems.

How does the Schottky-Plus body diode differ from a standard MOSFET body diode?

It combines low forward voltage (VSD = 0.78 V at 25 A) with soft reverse recovery (trr = 47 ns, Qr = 61 nC) and negligible increase in IDSS. Unlike standard body diodes, it avoids the trade-off between low VF and high leakage, enabling efficient synchronous rectification without added EMI filters.

Can PSMN1R4-40YLD be wave-soldered, and what are the key layout requirements?

Yes - its LFPAK56 package supports wave soldering per Figure 19. Key requirements include 0.6 mm wide solder lands (x4), 1.27 mm pitch, and 1.72–2.1 mm pad length. Exposed mounting base must remain unmasked to ensure reliable solder joint formation and thermal integrity.

PSMN1R4-40YLD/2X Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
143 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6661 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
238W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

PSMN1R4-40YLD/2X FAQ

1.How can I place an order for PSMN1R4-40YLD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R4-40YLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R4-40YLD/2X reliable?

The price and inventory of PSMN1R4-40YLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R4-40YLD/2X is usually 5 days.

3.What payment methods are accepted for PSMN1R4-40YLD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R4-40YLD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R4-40YLD/2X?

PSMN1R4-40YLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R4-40YLD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R4-40YLD/2X?

For technical support, including PSMN1R4-40YLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R4-40YLD/2X requirements.

6.How does Aetrix verify that PSMN1R4-40YLD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN1R4-40YLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R4-40YLD/2X meets industry standards.

7.What is the process for return or replacement of PSMN1R4-40YLD/2X?

All PSMN1R4-40YLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R4-40YLD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R4-40YLD/2X part is unused and in its original packaging.

Return procedure for PSMN1R4-40YLD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN1R4-40YLD/2X Tags

  • PSMN1R4-40YLD/2X
  • PSMN1R4-40YLD/2X PDF
  • PSMN1R4-40YLD/2X Datasheet
  • PSMN1R4-40YLD/2X Specifications
  • PSMN1R4-40YLD/2X Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PSMN1R4-40YLD/2X
  • Buy PSMN1R4-40YLD/2X
  • PSMN1R4-40YLD/2X Price
  • PSMN1R4-40YLD/2X Distributor
  • PSMN1R4-40YLD/2X Supplier
  • PSMN1R4-40YLD/2X Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER