Nexperia USA Inc. PSMN1R5-25YL,115

Overview

PSMN1R5-25YL from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 25 V V_DS, 100 A continuous drain current at T_mb = 25 °C, and 1.13 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers high-efficiency switching in industrial power stages, including server PSUs and Class-D amplifiers.

For engineers reviewing the PSMN1R5-25YL datasheet, PSMN1R5-25YL pinout, PSMN1R5-25YL application, or PSMN1R5-25YL equivalent, key selection criteria include its low gate threshold (1.3–2.15 V), robust avalanche energy rating (290 mJ), and mounting-base thermal resistance (0.5–1.1 K/W) - critical for thermally constrained high-current designs.

Technical Context

This device uses TrenchMOS technology to achieve low conduction loss and fast switching with logic-level gate drive compatibility (V_GS(th) = 1.3–2.15 V). Its 4-pin LFPAK package integrates a large mounting base connected directly to the drain, enabling efficient heat transfer to the PCB copper plane.

Dynamic performance is defined by Q_G(tot) = 36 nC at V_GS = 4.5 V and Q_GD = 9.2 nC, supporting high-frequency operation in DC-DC converters. The integrated source-drain diode exhibits V_SD = 0.78 V at I_S = 25 A and t_rr = 43 ns, suitable for synchronous rectification and motor control freewheeling.

Key Specifications

Pinout & Package

PSMN1R5-25YL uses the SOT669 (LFPAK) plastic surface-mount package with exposed mounting base. The package features three parallel source terminals and one gate terminal, with the mounting base electrically connected to the drain for low-inductance, high-current power routing and enhanced thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL1404ZPBF and DMTH10H025LPSQ, PSMN1R5-25YL offers the best balance of ultra-low on-resistance, logic-level gate compatibility, and thermally optimized LFPAK packaging - making it optimal for space-constrained, high-current industrial power stages where PCB copper area and thermal headroom are limited.

Availability

PSMN1R5-25YL is available at Aetrix Electronics and suitable for server power supplies, Class-D amplifiers, motor control modules, and high-current load switches requiring stable component supply across multi-year production cycles.

Supply support for PSMN1R5-25YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for industrial and communications power conversion where low gate drive voltage, high current density, and avalanche robustness are mandatory.

FAQ

Is PSMN1R5-25YL suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.3–2.15 V at 25 °C and guaranteed enhancement at V_GS ≥ 4.5 V, the device fully turns on using standard 3.3 V GPIO outputs. Its R_DS(on) remains below 2.2 mΩ even at V_GS = 4.5 V, ensuring low conduction loss without external level shifters.

What is the maximum continuous current achievable with standard 2 oz copper PCB layout?

With 2 oz copper and 10 cm² exposed mounting-base copper pour, PSMN1R5-25YL achieves ~75 A continuous current before reaching T_j = 150 °C. This is derived from its 0.5 K/W typical R_th(j-mb) and 109 W P_tot rating at T_mb = 25 °C - actual current depends on ambient temperature and airflow.

Does the integrated source-drain diode support synchronous rectification?

Yes. The body diode has V_SD = 0.78 V at 25 A and t_rr = 43 ns, enabling use in synchronous buck topologies up to 300 kHz. Its Q_r = 50 nC and soft recovery characteristics reduce switching loss and EMI compared to discrete Schottky solutions.

How does the LFPAK package compare thermally to TO-220 or SO-8 packages?

The SOT669 (LFPAK) package delivers 0.5 K/W typical R_th(j-mb), outperforming TO-220 (1.25 K/W) and SO-8 (3.5 K/W) by 2.5× and 7× respectively. This allows >80 W power dissipation with only PCB copper - eliminating heatsinks in most industrial power applications.