Nexperia USA Inc. PSMN1R5-30YL,115

Overview

PSMN1R5-30YL from Nexperia is a logic-level N-channel MOSFET in LFPAK (SOT669) package, rated for 30 V V_DS, 1.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at T_mb = 25 °C and supports high-efficiency DC-to-DC conversion and lithium-ion battery protection circuits.

For engineers reviewing the PSMN1R5-30YL datasheet, PSMN1R5-30YL pinout, PSMN1R5-30YL application, or PSMN1R5-30YL equivalent, key selection criteria include its 1.5 mΩ low R_DS(on), 4.5 V logic-level gate drive compatibility, 241 mJ non-repetitive avalanche energy rating, and LFPAK thermal performance with R_th(j-mb) = 0.5 K/W typical.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve ultra-low on-resistance and gate charge-Q_G(tot) = 36.2 nC at V_GS = 4.5 V-enabling fast switching in high-current power stages. Its source-drain diode exhibits V_SD = 0.78 V at I_S = 25 A and T_j = 25 °C, supporting synchronous rectification and bidirectional load control.

The device features a thermally optimized LFPAK package with mounting base connected to drain, enabling direct heatsinking and delivering 109 W total power dissipation at T_mb = 25 °C. Its gate threshold voltage V_GS(th) ranges from 1.3 V to 2.15 V at T_j = 25 °C, ensuring robust turn-on under logic-level drive conditions.

Key Specifications

Pinout & Package

PSMN1R5-30YL uses the SOT669 (LFPAK) plastic single-ended surface-mounted package: 4-terminal layout with three parallel source pins (Pins 1–3), one gate pin (Pin 4), and the exposed mounting base electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with PSMN2R0-30YL, the PSMN1R5-30YL delivers 33% lower R_DS(on) for reduced conduction loss in high-current loads; versus IRL3803PBF, it offers superior thermal performance and 60% smaller footprint while maintaining logic-level drive compatibility.

Availability

PSMN1R5-30YL is available at Aetrix Electronics and suitable for DC-to-DC converters, lithium-ion battery protection circuits, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN1R5-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for industrial and consumer markets.

The PSMN1R5-30YL belongs to Nexperia's logic-level TrenchMOS portfolio, engineered specifically for high-efficiency, high-current power switching in space-constrained industrial and communications equipment.

FAQ

What is the maximum continuous drain current for PSMN1R5-30YL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 55 A, based on Figure 1 of the datasheet. This reflects thermal limitation of the LFPAK package-not silicon capability-and assumes adequate PCB copper area for heat spreading.

Does PSMN1R5-30YL support 3.3 V logic-level gate drive across its full operating temperature range?

Yes: V_GS(th) remains ≤2.45 V at T_j = −55 °C and ≥0.65 V at T_j = 150 °C, ensuring reliable turn-on with 3.3 V drive across the full −55 °C to 175 °C junction range. Gate charge Q_G(tot) = 36.2 nC at 4.5 V confirms strong enhancement margin.

How does the LFPAK package improve thermal performance compared to standard PowerSO8?

The LFPAK (SOT669) uses an exposed copper mounting base directly bonded to the die drain, achieving R_th(j-mb) = 0.5 K/W typical-nearly 3× better than PowerSO8's ~1.4 K/W. This enables 109 W power dissipation at T_mb = 25 °C using only PCB copper, eliminating need for external heatsinks in most applications.

Is PSMN1R5-30YL suitable for avalanche-prone motor drive applications?

Yes: it is rated for 241 mJ non-repetitive drain-source avalanche energy (E_AS) under specified test conditions (V_GS = 10 V, I_D = 100 A, V_sup ≤30 V). This provides validated ruggedness against inductive flyback in brushed/BLDC motor H-bridges without external snubbers.