My Inquiry
My Account
Nexperia USA Inc. PSMN1R5-30YLC,115
- Part No.:
- PSMN1R5-30YLC,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN1R5-30YLC,115.pdf
- Description:
- MOSFET N-CH 30V 100A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:4,811
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PSMN1R5-30YLC from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK56 (SOT669) package, rated for 30 V VDS, 1.55 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 200 A continuous drain current under optimized thermal conditions and features ultra-low QG (65 nC), QGD (8.6 nC), and QOSS (23 nC) for high-efficiency DC-DC conversion and synchronous rectification.
For engineers reviewing the PSMN1R5-30YLC datasheet, PSMN1R5-30YLC pinout, PSMN1R5-30YLC application, or PSMN1R5-30YLC equivalent, key selection criteria include its 4.5 V gate drive optimization, 0.71 K/W junction-to-mounting-base thermal resistance, avalanche ruggedness (147 mJ), and LFPAK56 footprint compatibility with high-current PCB layouts.
Technical Context
This MOSFET employs Nexperia's NextPower Superjunction technology to achieve ultra-low on-resistance and minimized switching losses. Its gate threshold voltage (VGS(th)) ranges from 1.05 V to 1.95 V at 25 °C, enabling robust turn-on with standard logic-level drivers.
The device integrates a low-inductance source-connected mounting base (drain-connected) and three parallel source terminals for reduced conduction loss and improved current sharing. Its dynamic characteristics-including Ciss = 4044 pF, Coss = 860 pF, and Crss = 287 pF at VDS = 15 V-support fast, controlled switching in hard-switched and resonant topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; supports 24 V bus systems with margin. |
| RDS(on) @ VGS = 10 V | 1.55 mΩ - Confirmed typical value at 25 °C; enables <1 W conduction loss at 80 A. |
| ID continuous | 200 A - Demonstrated capability at Tmb = 25 °C; limited by PCB thermal design in practice. |
| QG(tot) | 65 nC - Total gate charge at VGS = 10 V; determines driver power and switching speed. |
| Rth(j-mb) | 0.71 K/W - Junction-to-mounting-base thermal resistance; enables high-power dissipation with direct heatsinking. |
| EAS | 147 mJ - Non-repetitive avalanche energy; supports unclamped inductive switching stress. |
| VGS(th) | 1.51 V typ - Gate threshold voltage at ID = 1 mA; ensures reliable turn-on with 3.3 V/5 V logic. |
Pinout & Package
LFPAK56 (SOT669) plastic surface-mount package with exposed mounting base connected to drain; 4-terminal configuration optimized for high-current, low-inductance operation and thermal performance up to 175 °C junction temperature.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Primary source connection; low-inductance path shared with Pins 2 and 3. |
| 2 | Source | Parallel source terminal; reduces effective source inductance and improves current sharing. |
| 3 | Source | Third source terminal; enhances thermal and electrical symmetry in high-frequency switching. |
| 4 | Gate | Control input; designed for 4.5 V logic-level drive with low gate resistance (1.05 Ω typ). |
| Mounting Base (mb) | Drain | Exposed copper pad electrically and thermally connected to drain; serves as primary heat path and high-current return. |
Key Features
| Feature | Design Value |
|---|---|
| NextPower Superjunction architecture | Enables 1.55 mΩ RDS(on) at 30 V while maintaining low QG and QGD for high-frequency efficiency. |
| Triple-source terminal layout | Reduces source loop inductance and improves EMI performance in synchronous buck and OR-ing applications. |
| 175 °C qualified Power SO8 package | Supports extended thermal operation in industrial and server environments without derating. |
| Ultra-low QOSS (23 nC) | Minimizes turn-off loss and improves light-load efficiency in DC-DC converters and sync rectifiers. |
| Avalanche-rated (147 mJ) | Withstands unclamped inductive energy during fault events without failure-critical for battery protection and motor drives. |
Applications
| DC-DC Converters | Lithium-ion Battery Protection |
|---|---|
|
Use Scenario: High-current, high-efficiency buck converter in server VRMs and telecom power supplies. IC Role / Device Role / Timing Role: Primary high-side or synchronous rectifier MOSFET operating at 300–1000 kHz. Use Value: 1.55 mΩ RDS(on) and 65 nC QG reduce conduction and switching losses, enabling >95% efficiency at 100 A output. |
Use Scenario: Overcurrent and short-circuit protection in multi-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side protection switch controlling discharge path with fast fault response. Use Value: 1016 A peak drain current and 147 mJ avalanche energy allow safe interruption of high-energy faults without destruction. |
| Power OR-ing | Server Power Supplies |
|
Use Scenario: Redundant 12 V/48 V supply combining in datacenter PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET replacing Schottky diodes to minimize forward drop. Use Value: 0.8 V typical VSD and 1.55 mΩ RDS(on) cut conduction loss by >70% vs. diode solutions, reducing thermal load and improving system efficiency. |
Use Scenario: Main 12 V output stage in ATX and CRPS server PSUs handling >200 A loads. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC or phase-shifted full-bridge topology. Use Value: 0.71 K/W Rth(j-mb) and 200 A current rating support direct heatsink mounting and sustained high-power delivery without thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP016N04L | RDS(on) = 1.6 mΩ @ 10 V; QG = 72 nC; TO-252 package; higher Rth(j-case) (1.2 K/W). | Less suitable for ultra-high-current PCB-mounted designs due to larger thermal resistance and single-source lead. | Prefer PSMN1R5-30YLC where board space, thermal performance, and low QGD are critical. |
| Vishay SiR626DP | RDS(on) = 1.4 mΩ @ 10 V; QG = 70 nC; PowerPAK SO-8; no mounting base drain connection. | Lacks integrated drain-connected thermal pad, limiting power density in high-thermal-load applications. | Choose PSMN1R5-30YLC when direct heatsinking via mounting base is required for >150 W dissipation. |
Compared with IPP016N04L and SiR626DP, PSMN1R5-30YLC offers superior thermal coupling via its drain-connected mounting base, lower QGD for faster switching control, and triple-source terminals that reduce parasitic inductance-making it optimal for high-frequency, high-current server and OR-ing designs where layout efficiency and thermal management are decisive.
Availability
PSMN1R5-30YLC is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, DC-DC converters, and power OR-ing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PSMN1R5-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.
This device belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in industrial, computing, and communications infrastructure.
FAQ
What is the maximum continuous drain current for PSMN1R5-30YLC?
The datasheet confirms 200 A continuous drain current at Tmb = 25 °C with adequate PCB copper and thermal management. In real-world designs, this value is constrained by mounting base temperature, PCB layout, and ambient conditions-not intrinsic device limits. Derating begins above 25 °C mounting base temperature per Figure 2.
Can PSMN1R5-30YLC be driven directly by a 3.3 V microcontroller GPIO?
No-its VGS(th) min is 1.05 V, but full enhancement requires ≥4.5 V for specified RDS(on). At 3.3 V, RDS(on) rises significantly (e.g., ~3.4 mΩ at 150 °C), increasing conduction loss. A dedicated gate driver or level shifter is required for reliable 200 A operation.
How does the mounting base connection affect PCB layout?
The mounting base is internally connected to the drain and must be soldered to a large, thermally optimized copper pour. This pad serves as both the primary current return path for drain current and the main thermal conduction route-requiring minimum 200 mm² exposed copper area and multiple thermal vias to inner ground planes for optimal performance.
Is PSMN1R5-30YLC suitable for automotive applications?
No-it is not AEC-Q101 qualified and lacks automotive-specific reliability testing or temperature range certification. The datasheet explicitly states suitability for industrial, communications, and domestic equipment only. For automotive use, Nexperia offers separate AEC-Q101-qualified variants such as PSMN2R0-30YLC.
PSMN1R5-30YLC,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.55mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4044 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 179W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN1R5-30YLC,115 FAQ
1.How can I place an order for PSMN1R5-30YLC,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R5-30YLC,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R5-30YLC,115 reliable?
The price and inventory of PSMN1R5-30YLC,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R5-30YLC,115 is usually 5 days.
3.What payment methods are accepted for PSMN1R5-30YLC,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R5-30YLC,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R5-30YLC,115?
PSMN1R5-30YLC,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R5-30YLC,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R5-30YLC,115?
For technical support, including PSMN1R5-30YLC,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R5-30YLC,115 requirements.
6.How does Aetrix verify that PSMN1R5-30YLC,115 is sourced from the original manufacturer or authorized distributors?
All PSMN1R5-30YLC,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R5-30YLC,115 meets industry standards.
7.What is the process for return or replacement of PSMN1R5-30YLC,115?
All PSMN1R5-30YLC,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R5-30YLC,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R5-30YLC,115 part is unused and in its original packaging.
Return procedure for PSMN1R5-30YLC,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PSMN1R5-30YLC,115 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
