Nexperia USA Inc. PSMN1R5-40PS,127
- Part No.:
- PSMN1R5-40PS,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PSMN1R5-40PS,127.pdf
- Description:
- MOSFET N-CH 40V 120A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:50
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Product details
Overview
PSMN1R5-40PS from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 40 V drain-source voltage, 1.6 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, 150 A continuous drain current (package-limited), and optimized for high-efficiency motor control in battery-powered power tools.
For engineers reviewing the PSMN1R5-40PS datasheet, PSMN1R5-40PS pinout, PSMN1R5-40PS application, or PSMN1R5-40PS equivalent, key selection criteria include its low conduction loss (1.3–1.6 mΩ), robust unclamped avalanche energy rating (1.1 J), gate threshold voltage range (2–4 V), thermal resistance to mounting base (0.22–0.44 K/W), and suitability for high-current load switching with standard 10 V gate drive.
Technical Context
This MOSFET employs TrenchMOS technology to achieve ultra-low RDS(on) while maintaining ruggedness for pulsed and avalanche conditions. Its standard-level gate (VGS(th) = 2–4 V, VGS = 10 V drive) enables direct compatibility with 5 V and 3.3 V logic controllers without level-shifting.
The device features a 3-pin TO-220AB package with isolated mounting base, enabling efficient heatsinking. Its dynamic characteristics-QG(tot) = 136 nC, QGD = 32 nC, and Ciss = 9710 pF-support fast switching in hard-switched DC-DC and motor drive topologies up to ~100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - supports 36 V nominal battery systems with headroom for transients. |
| RDS(on) | 1.3–1.6 mΩ at VGS = 10 V, Tj = 25 °C - enables <1.6 W conduction loss at 100 A, critical for thermal management in compact tools. |
| ID | 150 A continuous - limited by TO-220AB package thermal capacity, not silicon, requiring proper heatsink mounting. |
| EAS | 1.1 J non-repetitive avalanche energy - withstands inductive kickback during motor commutation without external snubbers. |
| QG(tot) | 136 nC - determines gate driver power requirement; compatible with common 1–2 A peak gate drivers. |
| Rth(j-mb) | 0.22–0.44 K/W - defines junction-to-heatsink thermal path; mandates mechanical mounting to metal surface for rated performance. |
| VGS(th) | 2–4 V - ensures reliable turn-on with standard microcontroller GPIOs and avoids false triggering near ground noise. |
Pinout & Package
TO-220AB (SOT78) plastic single-ended package with isolated mounting base, 1 mounting hole, and 3 leads. Mounting base serves as drain connection and primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (left) | Gate (G) | Control terminal; requires ≤20 V absolute max; 136 nC total charge demands low-impedance drive for fast switching. |
| 2 (center) | Drain (D) | Main power output; electrically connected to mounting base - must be isolated from chassis unless drain-referenced topology is used. |
| 3 (right) | Source (S) | Power return path; referenced to gate drive ground; source-drain diode VSD = 0.8–1.2 V enables freewheeling in H-bridge motor drives. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 1.3–1.6 mΩ @ 10 V - reduces I²R losses in high-current motor phases, directly extending battery runtime in cordless tools. |
| TrenchMOS architecture | Optimized cell density and trench geometry - delivers high current capability in TO-220AB without die size compromise or thermal derating. |
| Standard-level gate drive | VGS(th) = 2–4 V, full enhancement at 10 V - eliminates need for gate driver ICs in MCU-based tool controllers using 5 V or 3.3 V rails. |
| Robust avalanche rating | 1.1 J unclamped EAS - sustains repetitive inductive energy spikes during brushless motor commutation without degradation. |
| Low QGD/QG ratio | 32/136 ≈ 24% - improves switching speed and Miller immunity, reducing cross-conduction risk in synchronous rectification. |
Applications
| Battery-Powered Power Tools | Motor Control in Cordless Drills |
|---|---|
|
Use Scenario: High-current H-bridge driver in 18–40 V cordless drills and impact drivers, handling stall currents up to 150 A. IC Role / Device Role / Timing Role: Main power switch in half-bridge leg; conducts bidirectional motor current with integrated body diode freewheeling. Use Value: 1.6 mΩ RDS(on) limits conduction loss to <2.4 W at 120 A, enabling smaller heatsinks and longer duty cycles before thermal shutdown. |
Use Scenario: PWM-controlled motor phase switch in brushless DC (BLDC) tool motors, operating at 10–25 kHz switching frequency. IC Role / Device Role / Timing Role: Low-side or high-side switching element; synchronized with gate driver for precise torque control and regenerative braking. Use Value: 136 nC total gate charge and 32 nC gate-drain charge enable clean, fast transitions with minimal shoot-through risk under 1 A gate drive. |
| Uninterruptible Power Supplies (UPS) | High-Current Load Switching |
|
Use Scenario: Output stage switch in offline UPS inverters converting 48 V DC battery bank to 120/230 V AC via full-bridge topology. IC Role / Device Role / Timing Role: Primary power switch handling bidirectional current; subjected to unclamped inductive flyback during dead-time transitions. Use Value: 1.1 J avalanche energy rating allows safe operation during transient overloads without external clamping, simplifying protection circuitry. |
Use Scenario: Main battery disconnect switch in industrial portable equipment, controlling >100 A loads with remote ON/OFF signaling. IC Role / Device Role / Timing Role: Single-pole, high-current electronic fuse; activated by microcontroller GPIO with standard 10 V logic level. Use Value: Standard-level gate enables direct MCU control; 150 A rating supports peak surge currents during hot-plug events without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.0 mΩ @ 10 V; higher conduction loss; TO-220 package with same pinout but no isolated mounting base. | Lacks avalanche ruggedness rating (EAS unspecified); less suitable for inductive motor loads without snubbers. | Lower cost option where thermal margin exists and avalanche stress is absent; requires separate heatsink isolation. |
| STP160NF04 | RDS(on) = 3.5 mΩ @ 10 V; higher gate charge (160 nC); similar TO-220AB package with isolated tab. | Higher QG increases driver complexity and switching loss; lower avalanche rating (0.8 J). | Acceptable for lower-frequency (<50 kHz), lower-current motor control where thermal budget permits higher RDS(on). |
Compared with IRF1404PBF and STP160NF04, PSMN1R5-40PS delivers superior conduction efficiency (≤1.6 mΩ), verified avalanche ruggedness (1.1 J), and optimized gate charge profile for fast, robust switching in high-dynamic-load battery tools-making it the preferred choice where thermal density and reliability under inductive stress are critical.
Availability
PSMN1R5-40PS is available at Aetrix Electronics and suitable for battery-powered power tools, uninterruptible power supplies, and high-current load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.
Supply support for PSMN1R5-40PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.
The PSMN1R5-40PS belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in portable battery-operated equipment such as power tools and portable medical devices.
FAQ
Is PSMN1R5-40PS suitable for 24 V automotive applications?
No. This device is not automotive-qualified per Nexperia's legal disclaimers. It lacks AEC-Q101 qualification, has no automotive-grade screening, and is explicitly designated for industrial and consumer battery tools-not vehicle subsystems. Use only in non-safety-critical, non-life-support applications.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 1 in the datasheet, normalized continuous drain current drops to ~60% at Tmb = 100 °C, yielding approximately 90 A (60% of 150 A). This reflects thermal derating due to reduced heat transfer efficiency-not electrical limitation-and assumes proper heatsink contact and airflow.
Can PSMN1R5-40PS be used in synchronous rectification topologies?
Yes. Its low RDS(on) (1.3–1.6 mΩ), fast switching parameters (tr = 66 ns, tf = 53 ns), and low QGD/QG ratio make it suitable for low-voltage, high-current synchronous rectifiers-provided gate drive timing avoids shoot-through and layout minimizes parasitic inductance.
Does the TO-220AB package provide electrical isolation between drain and mounting base?
Yes. The TO-220AB (SOT78) package used for PSMN1R5-40PS features an electrically isolated mounting base. Drain (pin 2) connects internally to the base, but the base itself is insulated from the PCB heatsink plane-enabling floating drain configurations without additional insulating hardware.
PSMN1R5-40PS,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 136 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9710 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 338W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PSMN1R5-40PS,127 FAQ
1.How can I place an order for PSMN1R5-40PS,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R5-40PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R5-40PS,127 reliable?
The price and inventory of PSMN1R5-40PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R5-40PS,127 is usually 5 days.
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Once your PSMN1R5-40PS,127 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for PSMN1R5-40PS,127?
For technical support, including PSMN1R5-40PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R5-40PS,127 requirements.
6.How does Aetrix verify that PSMN1R5-40PS,127 is sourced from the original manufacturer or authorized distributors?
All PSMN1R5-40PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R5-40PS,127 meets industry standards.
7.What is the process for return or replacement of PSMN1R5-40PS,127?
All PSMN1R5-40PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R5-40PS,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R5-40PS,127 part is unused and in its original packaging.
Return procedure for PSMN1R5-40PS,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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