Nexperia USA Inc. PSMN1R5-40YSD/2X

Overview

PSMN1R5-40YSD from Nexperia is an N-channel standard-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 1.5 mΩ R_DS(on) at 10 V V_GS, and 240 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is qualified to 175 °C junction temperature - deployed in high-efficiency server power supplies and synchronous rectification stages.

For engineers reviewing the PSMN1R5-40YSD datasheet, PSMN1R5-40YSD pinout, PSMN1R5-40YSD application, or PSMN1R5-40YSD equivalent, key selection criteria include its 0.56 K/W junction-to-mounting-base thermal resistance, 10 nC typical Q_GD, 1.3–1.5 mΩ R_DS(on) range at 25 °C, avalanche rating of 190 A I_AS, and LFPAK56's copper-clip die attach enabling high-current wave-solderable mounting.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with Schottky-Plus body diode integration, delivering low Q_RR (37 nC), soft reverse recovery (t_rr = 38 ns), and strong linear-mode SOA up to 238 W at T_mb = 25 °C. Its gate threshold voltage is 2.4–3.6 V with -6.9 mV/K temperature coefficient, supporting robust turn-on control across wide thermal ranges.

The device features a 4-terminal LFPAK56 layout with three parallel source pins and one gate pin, mounted on a thermally enhanced copper-clip substrate. Drain is internally connected to the exposed mounting base (mb), enabling direct PCB thermal conduction and minimizing parasitic inductance (<1.5 nH) and resistance (<0.35 mΩ).

Key Specifications

Pinout & Package

PSMN1R5-40YSD uses the LFPAK56 (SOT669) package - a 4-terminal, single-ended surface-mount plastic package with copper-clip construction, qualified to 175 °C and optimized for high-current wave soldering and visual solder-joint inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) N-channel MOSFET applications.

Compared with IPP020N04N and SiR626DP, PSMN1R5-40YSD uniquely combines 1.5 mΩ R_DS(on), 38 ns t_rr, 190 A I_AS validation, and LFPAK56's copper-clip thermal performance - making it optimal for space-constrained, high-reliability synchronous rectification and eFuse designs requiring both efficiency and ruggedness.

Availability

PSMN1R5-40YSD is available at Aetrix Electronics and suitable for high-efficiency server power supplies, BLDC motor inverters, battery protection circuits, and hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN1R5-40YSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced MOSFET technologies and automotive-qualified components.

This part belongs to Nexperia's NextPower-S3 Schottky-Plus MOSFET product line, engineered specifically for high-frequency, high-current power conversion where low conduction loss, soft body-diode recovery, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for PSMN1R5-40YSD under real-world PCB conditions?

The datasheet specifies 240 A at T_mb = 25 °C with optimized thermal mounting - but practical current is limited by PCB copper area, ambient temperature, and airflow. With 70 µm copper on FR4 per Figure 5, sustained current drops to ~202 A at T_mb = 100 °C. Derating curves in Figure 2 must be applied for actual board-level thermal design.

Does PSMN1R5-40YSD support gate drive with 5 V logic-level controllers?

No - it is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement. At V_GS = 5 V, R_DS(on) rises above 4 mΩ (Figure 8), increasing conduction loss significantly. A dedicated 12 V gate driver or level-shifter is required for optimal performance.

How is the mounting base (mb) electrically connected, and what precautions apply during PCB layout?

The mounting base is internally connected to the drain terminal and must be routed to the high-side DC bus or transformer secondary return. It requires a large, low-impedance copper pour (minimum 25.4 mm × 25.4 mm, 70 µm thick) per Figure 5 to achieve the specified 0.56 K/W R_th(j-mb). Thermal vias under the pad are recommended but must avoid compromising solder joint integrity.

Is PSMN1R5-40YSD qualified for automotive applications?

No - this device is not AEC-Q101 qualified and is explicitly designated for industrial and computing applications. Nexperia's documentation states "non-automotive qualified products" and excludes use in safety-critical or life-support systems. Automotive-grade alternatives require separate qualification and part numbering.